Growth of MgCaO on GaN

A. H. Onstine; B. P. Gila; J. Kim; A. Herrero; R. Mehandru; C. R. Abernathy; F. Ren; S. J. Pearton

Growth of MgCaO on GaN

A. H. Onstine, B. P. Gila, J. Kim, A. Herrero, R. Mehandru, C. R. Abernathy, F. Ren, S. J. Pearton

Research output: Contribution to conference › Paper › peer-review

Abstract

The feasibility of depositing ternary oxides on GaN has been investigated. MgCaO films were deposited by gas-source molecular beam epitaxy using elemental metals and a radio frequency oxygen plasma. Films deposited with roughly equal Mg and Ca beam equivalent pressures showed disproportionately high Mg/Ca ratios, indicative of a low Ca sticking coefficient. Depth profiling Auger electron spectroscopy (AES) showed a steep increase in the Ca concentration at the surface relative to the oxide/GaN interface. This segregation was enhanced at lower growth rate. In spite of this segregation, XRD of films deposited at 100°C showed no evidence of phase separation. The addition of Ca did appear to increase the lattice constant of the material thus reducing the mismatch to GaN.

Original language	English
Pages	344-349
Number of pages	6
Publication status	Published - 2003
Externally published	Yes
Event	State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium - Orlando,FL, United States Duration: 2003 Oct 12 → 2003 Oct 17

Other

Other	State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium
Country/Territory	United States
City	Orlando,FL
Period	03/10/12 → 03/10/17

ASJC Scopus subject areas

Engineering(all)

Cite this

Onstine, A. H., Gila, B. P., Kim, J., Herrero, A., Mehandru, R., Abernathy, C. R., Ren, F., & Pearton, S. J. (2003). Growth of MgCaO on GaN. 344-349. Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.

Growth of MgCaO on GaN. / Onstine, A. H.; Gila, B. P.; Kim, J.; Herrero, A.; Mehandru, R.; Abernathy, C. R.; Ren, F.; Pearton, S. J.

2003. 344-349 Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.

Research output: Contribution to conference › Paper › peer-review

Onstine, AH, Gila, BP, Kim, J, Herrero, A, Mehandru, R, Abernathy, CR, Ren, F & Pearton, SJ 2003, 'Growth of MgCaO on GaN', Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States, 03/10/12 - 03/10/17 pp. 344-349.

Onstine, A. H. ; Gila, B. P. ; Kim, J. ; Herrero, A. ; Mehandru, R. ; Abernathy, C. R. ; Ren, F. ; Pearton, S. J. / Growth of MgCaO on GaN. Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.6 p.

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abstract = "The feasibility of depositing ternary oxides on GaN has been investigated. MgCaO films were deposited by gas-source molecular beam epitaxy using elemental metals and a radio frequency oxygen plasma. Films deposited with roughly equal Mg and Ca beam equivalent pressures showed disproportionately high Mg/Ca ratios, indicative of a low Ca sticking coefficient. Depth profiling Auger electron spectroscopy (AES) showed a steep increase in the Ca concentration at the surface relative to the oxide/GaN interface. This segregation was enhanced at lower growth rate. In spite of this segregation, XRD of films deposited at 100°C showed no evidence of phase separation. The addition of Ca did appear to increase the lattice constant of the material thus reducing the mismatch to GaN.",

author = "Onstine, {A. H.} and Gila, {B. P.} and J. Kim and A. Herrero and R. Mehandru and Abernathy, {C. R.} and F. Ren and Pearton, {S. J.}",

note = "Copyright: Copyright 2012 Elsevier B.V., All rights reserved.; State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium ; Conference date: 12-10-2003 Through 17-10-2003",

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T1 - Growth of MgCaO on GaN

AU - Onstine, A. H.

AU - Gila, B. P.

AU - Kim, J.

AU - Herrero, A.

AU - Mehandru, R.

AU - Abernathy, C. R.

AU - Ren, F.

AU - Pearton, S. J.

PY - 2003

Y1 - 2003

N2 - The feasibility of depositing ternary oxides on GaN has been investigated. MgCaO films were deposited by gas-source molecular beam epitaxy using elemental metals and a radio frequency oxygen plasma. Films deposited with roughly equal Mg and Ca beam equivalent pressures showed disproportionately high Mg/Ca ratios, indicative of a low Ca sticking coefficient. Depth profiling Auger electron spectroscopy (AES) showed a steep increase in the Ca concentration at the surface relative to the oxide/GaN interface. This segregation was enhanced at lower growth rate. In spite of this segregation, XRD of films deposited at 100°C showed no evidence of phase separation. The addition of Ca did appear to increase the lattice constant of the material thus reducing the mismatch to GaN.

AB - The feasibility of depositing ternary oxides on GaN has been investigated. MgCaO films were deposited by gas-source molecular beam epitaxy using elemental metals and a radio frequency oxygen plasma. Films deposited with roughly equal Mg and Ca beam equivalent pressures showed disproportionately high Mg/Ca ratios, indicative of a low Ca sticking coefficient. Depth profiling Auger electron spectroscopy (AES) showed a steep increase in the Ca concentration at the surface relative to the oxide/GaN interface. This segregation was enhanced at lower growth rate. In spite of this segregation, XRD of films deposited at 100°C showed no evidence of phase separation. The addition of Ca did appear to increase the lattice constant of the material thus reducing the mismatch to GaN.

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T2 - State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium

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Growth of MgCaO on GaN

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