Abstract
The feasibility of depositing ternary oxides on GaN has been investigated. MgCaO films were deposited by gas-source molecular beam epitaxy using elemental metals and a radio frequency oxygen plasma. Films deposited with roughly equal Mg and Ca beam equivalent pressures showed disproportionately high Mg/Ca ratios, indicative of a low Ca sticking coefficient. Depth profiling Auger electron spectroscopy (AES) showed a steep increase in the Ca concentration at the surface relative to the oxide/GaN interface. This segregation was enhanced at lower growth rate. In spite of this segregation, XRD of films deposited at 100°C showed no evidence of phase separation. The addition of Ca did appear to increase the lattice constant of the material thus reducing the mismatch to GaN.
Original language | English |
---|---|
Pages | 344-349 |
Number of pages | 6 |
Publication status | Published - 2003 |
Externally published | Yes |
Event | State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium - Orlando,FL, United States Duration: 2003 Oct 12 → 2003 Oct 17 |
Other
Other | State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium |
---|---|
Country/Territory | United States |
City | Orlando,FL |
Period | 03/10/12 → 03/10/17 |
ASJC Scopus subject areas
- Engineering(all)