Growth of MgCaO on GaN

A. H. Onstine, B. P. Gila, Ji Hyun Kim, A. Herrero, R. Mehandru, C. R. Abernathy, F. Ren, S. J. Pearton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The feasibility of depositing ternary oxides on GaN has been investigated. MgCaO films were deposited by gas-source molecular beam epitaxy using elemental metals and a radio frequency oxygen plasma. Films deposited with roughly equal Mg and Ca beam equivalent pressures showed disproportionately high Mg/Ca ratios, indicative of a low Ca sticking coefficient. Depth profiling Auger electron spectroscopy (AES) showed a steep increase in the Ca concentration at the surface relative to the oxide/GaN interface. This segregation was enhanced at lower growth rate. In spite of this segregation, XRD of films deposited at 100°C showed no evidence of phase separation. The addition of Ca did appear to increase the lattice constant of the material thus reducing the mismatch to GaN.

Original languageEnglish
Title of host publicationProceedings - Electrochemical Society
EditorsR.F. Kopt, A.G. Baca, S.J. Pearton, F. Ren
Pages344-349
Number of pages6
Volume11
Publication statusPublished - 2003 Dec 1
Externally publishedYes
EventState-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium - Orlando,FL, United States
Duration: 2003 Oct 122003 Oct 17

Other

OtherState-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium
CountryUnited States
CityOrlando,FL
Period03/10/1203/10/17

Fingerprint

Gas source molecular beam epitaxy
Oxides
Depth profiling
Auger electron spectroscopy
Phase separation
Lattice constants
Plasmas
Oxygen
Metals

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Onstine, A. H., Gila, B. P., Kim, J. H., Herrero, A., Mehandru, R., Abernathy, C. R., ... Pearton, S. J. (2003). Growth of MgCaO on GaN. In R. F. Kopt, A. G. Baca, S. J. Pearton, & F. Ren (Eds.), Proceedings - Electrochemical Society (Vol. 11, pp. 344-349)

Growth of MgCaO on GaN. / Onstine, A. H.; Gila, B. P.; Kim, Ji Hyun; Herrero, A.; Mehandru, R.; Abernathy, C. R.; Ren, F.; Pearton, S. J.

Proceedings - Electrochemical Society. ed. / R.F. Kopt; A.G. Baca; S.J. Pearton; F. Ren. Vol. 11 2003. p. 344-349.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Onstine, AH, Gila, BP, Kim, JH, Herrero, A, Mehandru, R, Abernathy, CR, Ren, F & Pearton, SJ 2003, Growth of MgCaO on GaN. in RF Kopt, AG Baca, SJ Pearton & F Ren (eds), Proceedings - Electrochemical Society. vol. 11, pp. 344-349, State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States, 03/10/12.
Onstine AH, Gila BP, Kim JH, Herrero A, Mehandru R, Abernathy CR et al. Growth of MgCaO on GaN. In Kopt RF, Baca AG, Pearton SJ, Ren F, editors, Proceedings - Electrochemical Society. Vol. 11. 2003. p. 344-349
Onstine, A. H. ; Gila, B. P. ; Kim, Ji Hyun ; Herrero, A. ; Mehandru, R. ; Abernathy, C. R. ; Ren, F. ; Pearton, S. J. / Growth of MgCaO on GaN. Proceedings - Electrochemical Society. editor / R.F. Kopt ; A.G. Baca ; S.J. Pearton ; F. Ren. Vol. 11 2003. pp. 344-349
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