Growth of MgCaO on GaN

A. H. Onstine, B. P. Gila, J. Kim, A. Herrero, R. Mehandru, C. R. Abernathy, F. Ren, S. J. Pearton

Research output: Contribution to conferencePaper

Abstract

The feasibility of depositing ternary oxides on GaN has been investigated. MgCaO films were deposited by gas-source molecular beam epitaxy using elemental metals and a radio frequency oxygen plasma. Films deposited with roughly equal Mg and Ca beam equivalent pressures showed disproportionately high Mg/Ca ratios, indicative of a low Ca sticking coefficient. Depth profiling Auger electron spectroscopy (AES) showed a steep increase in the Ca concentration at the surface relative to the oxide/GaN interface. This segregation was enhanced at lower growth rate. In spite of this segregation, XRD of films deposited at 100°C showed no evidence of phase separation. The addition of Ca did appear to increase the lattice constant of the material thus reducing the mismatch to GaN.

Original languageEnglish
Pages344-349
Number of pages6
Publication statusPublished - 2003
EventState-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium - Orlando,FL, United States
Duration: 2003 Oct 122003 Oct 17

Other

OtherState-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium
CountryUnited States
CityOrlando,FL
Period03/10/1203/10/17

ASJC Scopus subject areas

  • Engineering(all)

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    Onstine, A. H., Gila, B. P., Kim, J., Herrero, A., Mehandru, R., Abernathy, C. R., Ren, F., & Pearton, S. J. (2003). Growth of MgCaO on GaN. 344-349. Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.