Abstract
The feasibility of depositing ternary oxides on GaN has been investigated. MgCaO films were deposited by gas-source molecular beam epitaxy using elemental metals and a radio frequency oxygen plasma. Films deposited with roughly equal Mg and Ca beam equivalent pressures showed disproportionately high Mg/Ca ratios, indicative of a low Ca sticking coefficient. Depth profiling Auger electron spectroscopy (AES) showed a steep increase in the Ca concentration at the surface relative to the oxide/GaN interface. This segregation was enhanced at lower growth rate. In spite of this segregation, XRD of films deposited at 100°C showed no evidence of phase separation. The addition of Ca did appear to increase the lattice constant of the material thus reducing the mismatch to GaN.
| Original language | English |
|---|---|
| Title of host publication | Proceedings - Electrochemical Society |
| Editors | R.F. Kopt, A.G. Baca, S.J. Pearton, F. Ren |
| Pages | 344-349 |
| Number of pages | 6 |
| Volume | 11 |
| Publication status | Published - 2003 Dec 1 |
| Externally published | Yes |
| Event | State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium - Orlando,FL, United States Duration: 2003 Oct 12 → 2003 Oct 17 |
Other
| Other | State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium |
|---|---|
| Country | United States |
| City | Orlando,FL |
| Period | 03/10/12 → 03/10/17 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Growth of MgCaO on GaN. / Onstine, A. H.; Gila, B. P.; Kim, Ji Hyun; Herrero, A.; Mehandru, R.; Abernathy, C. R.; Ren, F.; Pearton, S. J.
Proceedings - Electrochemical Society. ed. / R.F. Kopt; A.G. Baca; S.J. Pearton; F. Ren. Vol. 11 2003. p. 344-349.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Growth of MgCaO on GaN
AU - Onstine, A. H.
AU - Gila, B. P.
AU - Kim, Ji Hyun
AU - Herrero, A.
AU - Mehandru, R.
AU - Abernathy, C. R.
AU - Ren, F.
AU - Pearton, S. J.
PY - 2003/12/1
Y1 - 2003/12/1
N2 - The feasibility of depositing ternary oxides on GaN has been investigated. MgCaO films were deposited by gas-source molecular beam epitaxy using elemental metals and a radio frequency oxygen plasma. Films deposited with roughly equal Mg and Ca beam equivalent pressures showed disproportionately high Mg/Ca ratios, indicative of a low Ca sticking coefficient. Depth profiling Auger electron spectroscopy (AES) showed a steep increase in the Ca concentration at the surface relative to the oxide/GaN interface. This segregation was enhanced at lower growth rate. In spite of this segregation, XRD of films deposited at 100°C showed no evidence of phase separation. The addition of Ca did appear to increase the lattice constant of the material thus reducing the mismatch to GaN.
AB - The feasibility of depositing ternary oxides on GaN has been investigated. MgCaO films were deposited by gas-source molecular beam epitaxy using elemental metals and a radio frequency oxygen plasma. Films deposited with roughly equal Mg and Ca beam equivalent pressures showed disproportionately high Mg/Ca ratios, indicative of a low Ca sticking coefficient. Depth profiling Auger electron spectroscopy (AES) showed a steep increase in the Ca concentration at the surface relative to the oxide/GaN interface. This segregation was enhanced at lower growth rate. In spite of this segregation, XRD of films deposited at 100°C showed no evidence of phase separation. The addition of Ca did appear to increase the lattice constant of the material thus reducing the mismatch to GaN.
UR - http://www.scopus.com/inward/record.url?scp=5744229822&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=5744229822&partnerID=8YFLogxK
M3 - Conference contribution
VL - 11
SP - 344
EP - 349
BT - Proceedings - Electrochemical Society
A2 - Kopt, R.F.
A2 - Baca, A.G.
A2 - Pearton, S.J.
A2 - Ren, F.
ER -