Growth of nominally undoped p-type ZnO on Si by pulsed-laser deposition

Min Suk Oh, Sang Ho Kim, Tae Yeon Seong

Research output: Contribution to journalArticle

60 Citations (Scopus)

Abstract

We report on the growth of nominally undoped p -type ZnO films on Si(111) substrates by pulsed-laser deposition. Hall effect measurements show that the undoped ZnO films change from n -type to p -type material when the oxygen pressure changes from 6× 10-5 to 3× 10-4 Torr during growth. TiAu contacts produce ohmic behavior to n -type ZnO (∼ 1017 cm-3), but leaky Schottky behavior to p -type ZnO (∼ 1018 cm-3). Electrical and photoluminescence results indicate that native defects, such as oxygen and zinc vacancies, could play an important role in determining the conductivity of these nominally undoped ZnO films.

Original languageEnglish
Article number122103
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number12
DOIs
Publication statusPublished - 2005 Sep 19

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pulsed laser deposition
oxygen
Hall effect
zinc
photoluminescence
conductivity
defects

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Growth of nominally undoped p-type ZnO on Si by pulsed-laser deposition. / Oh, Min Suk; Kim, Sang Ho; Seong, Tae Yeon.

In: Applied Physics Letters, Vol. 87, No. 12, 122103, 19.09.2005, p. 1-3.

Research output: Contribution to journalArticle

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