We report on the growth of nominally undoped p -type ZnO films on Si(111) substrates by pulsed-laser deposition. Hall effect measurements show that the undoped ZnO films change from n -type to p -type material when the oxygen pressure changes from 6× 10-5 to 3× 10-4 Torr during growth. TiAu contacts produce ohmic behavior to n -type ZnO (∼ 1017 cm-3), but leaky Schottky behavior to p -type ZnO (∼ 1018 cm-3). Electrical and photoluminescence results indicate that native defects, such as oxygen and zinc vacancies, could play an important role in determining the conductivity of these nominally undoped ZnO films.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)