Growth of order/disorder heterostructures in GaInP using a variation in V/III ratio

Y. S. Chun, Y. Hsu, I. H. Ho, T. C. Hsu, H. Murata, G. B. Stringfellow, J. H. Kim, Tae Yeon Seong

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Abstract

CuPt ordering, resulting in formation of a natural monolayer {111} super-lattice occurs spontaneously during organometallic vapor phase epitaxial growth of Ga0.52In0.48P. The degree of order is found to be a function of the input partial pressure of the phosphorus precursor (PP) during growth. This is thought to be mainly due to the effect of PP on the surface reconstruction. A change in order parameter is associated with a change in the bandgap energy. Thus a practical application of ordering is the production of a heterostructure by simply changing the flow rate of the P precursor during growth. Examination of transmission electron microscopy data and photoluminescence spectra indicates that order/ disorder (O/D) (really less ordered on more ordered) and D/O heterostructures formed by growth using PH3 at a temperature of 620°C are graded over several thousands of Å: The ordered structure from the lower layer persists into the upper layer. Similar results were obtained at 620°C when the first layer was grown using PH3 (V/III = 160) and the second using tertiarybutylphosphine (TBP) (V/III = 5). The use of a temperature of 670°C to produce heterostructures using either PH3 or TBP yields a totally different behavior. Abrupt D/O and O/D heterostructures can be produced by changing PP during the growth cycle. The cause of this difference in behavior is not entirely clear. However, it appears to be related to a very slow change in the surface reconstruction measured using surface photo absorption, when the PH3 partial pressure is changed at 620 L.

Original languageEnglish
Pages (from-to)1250-1255
Number of pages6
JournalJournal of Electronic Materials
Volume26
Issue number10
Publication statusPublished - 1997 Oct 1
Externally publishedYes

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Keywords

  • GaInP
  • Heterostructures
  • Order
  • Organometallic vapor phase epitaxy (OMVPE)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

Cite this

Chun, Y. S., Hsu, Y., Ho, I. H., Hsu, T. C., Murata, H., Stringfellow, G. B., Kim, J. H., & Seong, T. Y. (1997). Growth of order/disorder heterostructures in GaInP using a variation in V/III ratio. Journal of Electronic Materials, 26(10), 1250-1255.