Growth of p-CdTe thin films on n-GaN/sapphire

Younghun Jung, Seunju Chun, Donghwan Kim, Ji Hyun Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

CdTe thin film was successfully grown on GaN/Sapphire substrate using a close spaced sublimation (CSS) system for the applications in solar cells. CdTe thin film was characterized by SEM, micro-Raman spectroscopy, and X-ray diffraction. The growth rate was 1 μm/min. In addition, we confirmed that CdCl2 treatment beneficially influenced the structure and composition of the CdTe thin films. CdCl2 treatment which has been known that it improved the efficiency of the CdS/CdTe solar cells, produced similar positive effects such as increasing the CdTe grain size and reducing the number of pin-holes. The growth of the CdTe thin film by CSS method produced nominal effects on biaxial strain and carrier concentrations in the GaN/Sapphire substrate. The CdTe thin film grown on the GaN/Sapphire substrate holds great promise for use in solar cell applications due to its several advantages.

Original languageEnglish
Pages (from-to)69-72
Number of pages4
JournalJournal of Crystal Growth
Volume326
Issue number1
DOIs
Publication statusPublished - 2011 Jul 1

    Fingerprint

Keywords

  • B1. CdTe
  • B1. GaN

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this