Growth of thick GaN films on RF sputtered AIN buffer layer by hydride vapor phase epitaxy

Heon Lee, Masaaki Yuri, Tetsuzo Ueda, James S. Harris, Kyusik Sin

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

High crystalline quality thick GaN films were grown by vapor phase epitaxy using GaCl3 and NH3. The growth rate was in the range of 10∼15 μ/h. GaN films grown at higher temperatures (960∼1020°C) were single crystalline with smooth surface morphologies. No chlorine impurity was incorporated in these films during growth. The best crystalline quality and surface morphology of grown films was achieved by sputtering a thin AlN buffer layer, prior to growth. According to reflection high energy electron diffraction and atomic force microscopy measurements, as-sputtered AlN buffer layer was amorphous with root means square roughness of 0.395 nm and then crystallized during the GaN growth. This improved the GaN growth due to more uniform distribution of GaN nucleation. Rutherford backscattering channeling experiments produced the lowest value from the GaN film grown on a-Al2O3 with a 500Å AlN buffer layer at 1020°C.

Original languageEnglish
Pages (from-to)898-902
Number of pages5
JournalJournal of Electronic Materials
Volume26
Issue number8
Publication statusPublished - 1997 Aug 1
Externally publishedYes

Fingerprint

Vapor phase epitaxy
Buffer layers
Thick films
Hydrides
vapor phase epitaxy
hydrides
thick films
buffers
Crystalline materials
Surface morphology
Reflection high energy electron diffraction
Chlorine
Rutherford backscattering spectroscopy
Film growth
Sputtering
Atomic force microscopy
Nucleation
Surface roughness
Impurities
high energy electrons

Keywords

  • AlN buffer layer
  • GaCl GaN film
  • Hydride vapor phase epitaxy (HVPE)
  • Minimum RBS channeling
  • NH
  • Rutherford backscattering spectroscopy (RBS)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

Cite this

Growth of thick GaN films on RF sputtered AIN buffer layer by hydride vapor phase epitaxy. / Lee, Heon; Yuri, Masaaki; Ueda, Tetsuzo; Harris, James S.; Sin, Kyusik.

In: Journal of Electronic Materials, Vol. 26, No. 8, 01.08.1997, p. 898-902.

Research output: Contribution to journalArticle

Lee, Heon ; Yuri, Masaaki ; Ueda, Tetsuzo ; Harris, James S. ; Sin, Kyusik. / Growth of thick GaN films on RF sputtered AIN buffer layer by hydride vapor phase epitaxy. In: Journal of Electronic Materials. 1997 ; Vol. 26, No. 8. pp. 898-902.
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