Growth of thick GaN films on RF sputtered AIN buffer layer by hydride vapor phase epitaxy

Engineering & Materials Science

• Vapor phase epitaxy 100%
• Buffer layers 80%
• Hydrides 71%
• Thick films 69%
• Crystalline materials 59%
• Surface morphology 42%
• Reflection high energy electron diffraction 38%
• Rutherford backscattering spectroscopy 35%
• Film growth 29%
• Sputtering 24%
• Atomic force microscopy 24%
• Chlorine 23%
• Nucleation 19%
• Impurities 18%
• Aluminum oxide 18%
• Surface roughness 15%
• Temperature 7%
• Experiments 6%

Physics & Astronomy

• vapor phase epitaxy 58%
• hydrides 57%
• thick films 53%
• buffers 47%
• chlorine 12%
• high energy electrons 11%
• backscattering 10%
• electron diffraction 9%
• roughness 9%
• sputtering 8%
• atomic force microscopy 8%
• nucleation 8%
• impurities 7%

Chemical Compounds

• Vapor Phase Epitaxy 89%
• Hydride 47%
• Buffer Solution 36%
• Liquid Film 27%
• Reflection High Energy Electron Diffraction 18%
• Rutherford Backscattering Spectroscopy 14%
• Sputtering 12%
• Chlorine 9%
• Nucleation 9%
• Atomic Force Microscopy 8%
• Amorphous Material 7%
• Surface 7%