Growth of vertically aligned carbon nanotube emitters on patterned silicon trenches for field emission applications

Yoon Huh, Jeong Yong Lee, Cheol Jin Lee

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

We have synthesized vertically aligned carbon nanotube (CNT) emitters on iron-deposited trenches by thermal chemical vapor deposition of acetylene gas for field emission applications. The trenches patterned with various shapes and sizes were fabricated on silicon oxide/silicon substrates using a conventional lithography method and lift-off process. The vertically well-aligned carbon nanotubes were selectively grown only on iron-deposited trenches. The alignment, selectivity, and structure of carbon nanotube emitters grown on the patterned silicon trenches with various shapes and sizes are investigated. Field emission properties such as turn-on voltage and the emission current are also characterized.

Original languageEnglish
Pages (from-to)267-270
Number of pages4
JournalThin Solid Films
Volume475
Issue number1-2 SPEC. ISS.
DOIs
Publication statusPublished - 2005 Mar 22
Externally publishedYes

Fingerprint

Carbon Nanotubes
Silicon
Field emission
field emission
Carbon nanotubes
emitters
carbon nanotubes
silicon
Iron
iron
Acetylene
Silicon oxides
silicon oxides
acetylene
Lithography
Chemical vapor deposition
lithography
Gases
selectivity
alignment

Keywords

  • Aligned growth
  • Carbon nanotube
  • Field emission
  • Patterned trench
  • Thermal chemical vapor deposition

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Growth of vertically aligned carbon nanotube emitters on patterned silicon trenches for field emission applications. / Huh, Yoon; Lee, Jeong Yong; Lee, Cheol Jin.

In: Thin Solid Films, Vol. 475, No. 1-2 SPEC. ISS., 22.03.2005, p. 267-270.

Research output: Contribution to journalArticle

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