Growth of ZnO thin film on p-GaN/sapphire (0 0 0 1) by simple hydrothermal technique

Trilochan Sahoo, Eun Sil Kang, Myoung Kim, Vasudevan Kannan, Yeon Tae Yu, Dong Chan Shin, Tae Geun Kim, In-Hwan Lee

Research output: Contribution to journalArticle

8 Citations (Scopus)


Zinc oxide (ZnO) heteroepitaxial thin films were successfully grown on p-GaN/sapphire (0 0 0 1) by single-step hydrothermal route at a low temperature of 90 °C. Continuous ZnO thin films with c-axis orientation were grown in aqueous solution of zinc acetate di-hydrate and ammonium hydroxide. X-ray diffraction, scanning electron microscopy and room temperature photoluminescence were carried out for structural, morphological and optical property analysis. The as-grown ZnO films showed preferential growth along (0 0 0 1) direction. The in-plane orientation between ZnO thin film and p-GaN buffer layer was found to be [1 1 2̄ 0] ZnO∥[1 1 2̄ 0] GaN. Sharp luminescence peak centered at 377 nm due to excitonic recombination from ZnO thin film was observed.

Original languageEnglish
Pages (from-to)570-574
Number of pages5
JournalJournal of Crystal Growth
Issue number3
Publication statusPublished - 2008 Feb 1


  • A1. Crystal structure
  • A1. X-ray diffraction
  • A2. Hydrothermal crystal growth
  • A3. Thin film
  • B1. Zinc compounds
  • B2. Semiconducting II-VI materials

ASJC Scopus subject areas

  • Condensed Matter Physics

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