@article{963da3e603254397a610bb768cf9c193,
title = "Half-Terahertz operation of SiGe HBTs",
abstract = "This letter presents the first demonstration of a silicon-germanium heterojunction bipolar transistor (SiGe HBT) capable of operation above the one-half terahertz (500 GHz) frequency. An extracted peak unity gain cutoff frequency (fT) of 510 GHz at 4.5 K was measured for a 0.12 × 1.0 μ2 SiGe HBT (352 GHz at 300 K) at a breakdown voltage BVCEO of 1.36 V (1.47 V at 300 K), yielding an fT × BVCEO product of 693.6 GHz-V at 4.5 K (517.4 GHz-V at 300 K).",
keywords = "Cryogenic temperatures, Frequency response, Heterojunction bipolar transistor (HBT), SiGe HBT, Silicon-germanium (SiGe), Terahertz",
author = "Ramkumar Krithivasan and Yuan Lu and Cressler, {John D.} and Rieh, {Jae Sung} and Khater, {Marwan H.} and David Ahlgren and Greg Freeman",
note = "Funding Information: Manuscript received February 28, 2006; revised April 10, 2006. This work was supported by NASA, IBM, and the Georgia Electronic Design Center at Georgia Tech. The review of this letter was arranged by Editor S. Bulucea. R. Krithivasan, Y. Lu, and J. D. Cressler are with the School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250 USA (e-mail: cressler@ece.gatech.edu). J.-S. Rieh is with Korea University, Seoul 136-701, Korea. M. H. Khater, D. Ahlgren, and G. Freeman are with IBM Microelectronics, East Fishkill, NY 12533 USA. Digital Object Identifier 10.1109/LED.2006.876298",
year = "2006",
month = jul,
doi = "10.1109/LED.2006.876298",
language = "English",
volume = "27",
pages = "567--569",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "7",
}