Half-Terahertz operation of SiGe HBTs

Ramkumar Krithivasan, Yuan Lu, John D. Cressler, Jae Sung Rieh, Marwan H. Khater, David Ahlgren, Greg Freeman

Research output: Contribution to journalArticle

78 Citations (Scopus)

Abstract

This letter presents the first demonstration of a silicon-germanium heterojunction bipolar transistor (SiGe HBT) capable of operation above the one-half terahertz (500 GHz) frequency. An extracted peak unity gain cutoff frequency (fT) of 510 GHz at 4.5 K was measured for a 0.12 × 1.0 μ2 SiGe HBT (352 GHz at 300 K) at a breakdown voltage BVCEO of 1.36 V (1.47 V at 300 K), yielding an fT × BVCEO product of 693.6 GHz-V at 4.5 K (517.4 GHz-V at 300 K).

Original languageEnglish
Pages (from-to)567-569
Number of pages3
JournalIEEE Electron Device Letters
Volume27
Issue number7
DOIs
Publication statusPublished - 2006 Jul

Keywords

  • Cryogenic temperatures
  • Frequency response
  • Heterojunction bipolar transistor (HBT)
  • SiGe HBT
  • Silicon-germanium (SiGe)
  • Terahertz

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Krithivasan, R., Lu, Y., Cressler, J. D., Rieh, J. S., Khater, M. H., Ahlgren, D., & Freeman, G. (2006). Half-Terahertz operation of SiGe HBTs. IEEE Electron Device Letters, 27(7), 567-569. https://doi.org/10.1109/LED.2006.876298