Hartree-Fock theory of hole stripe states

T. S. Kim, Sung Ryul Yang, A. H. MacDonald

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We report on Hartree-Fock theory results for stripe states of two-dimensional hole systems in quantum wells grown on GaAs (311)A substrates. We find that the stripe orientation energy has a rich dependence on hole density, and on in-plane field magnitude and orientation. Unlike the electron case, the orientation energy is nonzero for zero in-plane field, and the ground state orientation can be either parallel or perpendicular to a finite in-plane field. We predict an orientation reversal transition in in-plane fields applied along the [2̄33] direction.

Original languageEnglish
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume62
Issue number12
DOIs
Publication statusPublished - 2000 Sep 15

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Crystal orientation
Ground state
Semiconductor quantum wells
Electrons
Substrates
gallium arsenide
Direction compound
quantum wells
ground state
energy
electrons

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Hartree-Fock theory of hole stripe states. / Kim, T. S.; Yang, Sung Ryul; MacDonald, A. H.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 62, No. 12, 15.09.2000.

Research output: Contribution to journalArticle

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