Heteroepitaxial growth behavior of SrRuO 3/SrTiO 3(001) by pulsed laser deposition

Sang Sub Kim, Tae Yeon Seong, Hyun Seung Kim, Jung Ho Je

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Heteroepitaxial growth behavior of SrRuO 3/SrTiO 3(001) thin films during early stages by pulsed laser deposition was investigated using synchrotron x-ray scattering, atomic force microscopy, and high-resolution transmission electron microscopy. We find that three-dimensional (3D) SrRuO 3(110) islands of ∼1500 Å in diameter grow at an initial stage of growth (30 Å in thickness), in contrast to the two-dimensional layer growth previously reported in thick (3000 Å) films by off-axis sputtering. Interestingly, the 3D islands are coherently strained to the substrate, possessing a very narrow mosaic distribution of 0.007° half width at half maximum. On top of the existing well-aligned islands, poorly aligned 3D islands of much smaller sizes progressively grow, reducing the interfacial strain while maintaining the small surface roughness of 9 Å up to the film thickness of 420 Å.

Original languageEnglish
Pages (from-to)4820-4824
Number of pages5
JournalJournal of Applied Physics
Volume92
Issue number8
DOIs
Publication statusPublished - 2002 Oct 15
Externally publishedYes

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pulsed laser deposition
x ray scattering
thick films
interfacial tension
surface roughness
synchrotrons
film thickness
sputtering
atomic force microscopy
transmission electron microscopy
high resolution
thin films

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Heteroepitaxial growth behavior of SrRuO 3/SrTiO 3(001) by pulsed laser deposition. / Kim, Sang Sub; Seong, Tae Yeon; Kim, Hyun Seung; Je, Jung Ho.

In: Journal of Applied Physics, Vol. 92, No. 8, 15.10.2002, p. 4820-4824.

Research output: Contribution to journalArticle

Kim, Sang Sub ; Seong, Tae Yeon ; Kim, Hyun Seung ; Je, Jung Ho. / Heteroepitaxial growth behavior of SrRuO 3/SrTiO 3(001) by pulsed laser deposition. In: Journal of Applied Physics. 2002 ; Vol. 92, No. 8. pp. 4820-4824.
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