Heterojunction fabrication by selective area chemical vapor deposition induced by synchrotron radiation

Dongjin Byun, Seong Don Hwang, P. A. Dowben, F. Keith Perkins, F. Filips, N. J. Ianno

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

We have fabricated a B5C, boron-carbide/Si(111) heterojunction diode by the synchrotron radiation-induced decomposition of orthocarborane. This diode can be compared with similar boron-carbide/Si(111) heterojunction diodes fabricated by plasma enhanced chemical vapor deposition. The synchrotron radiation induced chemical vapor deposition is postulated to occur via the decomposition of weakly chemisorbed species and the results suggest that "real-time" projection lithography (selective area deposition) of boron-carbide devices is possible.

Original languageEnglish
Pages (from-to)1968-1970
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number15
DOIs
Publication statusPublished - 1994
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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