We have fabricated a B5C, boron-carbide/Si(111) heterojunction diode by the synchrotron radiation-induced decomposition of orthocarborane. This diode can be compared with similar boron-carbide/Si(111) heterojunction diodes fabricated by plasma enhanced chemical vapor deposition. The synchrotron radiation induced chemical vapor deposition is postulated to occur via the decomposition of weakly chemisorbed species and the results suggest that "real-time" projection lithography (selective area deposition) of boron-carbide devices is possible.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 1994|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)