Heterojunction fabrication by selective area chemical vapor deposition induced by synchrotron radiation

Dongjin Byun; Seong Don Hwang; P. A. Dowben; F. Keith Perkins; F. Filips; N. J. Ianno

doi:10.1063/1.111758

Heterojunction fabrication by selective area chemical vapor deposition induced by synchrotron radiation

Dongjin Byun, Seong Don Hwang, P. A. Dowben, F. Keith Perkins, F. Filips, N. J. Ianno

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

We have fabricated a B₅C, boron-carbide/Si(111) heterojunction diode by the synchrotron radiation-induced decomposition of orthocarborane. This diode can be compared with similar boron-carbide/Si(111) heterojunction diodes fabricated by plasma enhanced chemical vapor deposition. The synchrotron radiation induced chemical vapor deposition is postulated to occur via the decomposition of weakly chemisorbed species and the results suggest that "real-time" projection lithography (selective area deposition) of boron-carbide devices is possible.

Original language	English
Pages (from-to)	1968-1970
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	15
DOIs	https://doi.org/10.1063/1.111758
Publication status	Published - 1994
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "We have fabricated a B5C, boron-carbide/Si(111) heterojunction diode by the synchrotron radiation-induced decomposition of orthocarborane. This diode can be compared with similar boron-carbide/Si(111) heterojunction diodes fabricated by plasma enhanced chemical vapor deposition. The synchrotron radiation induced chemical vapor deposition is postulated to occur via the decomposition of weakly chemisorbed species and the results suggest that {"}real-time{"} projection lithography (selective area deposition) of boron-carbide devices is possible.",

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T1 - Heterojunction fabrication by selective area chemical vapor deposition induced by synchrotron radiation

AU - Byun, Dongjin

AU - Hwang, Seong Don

AU - Dowben, P. A.

AU - Perkins, F. Keith

AU - Filips, F.

AU - Ianno, N. J.

PY - 1994

Y1 - 1994

N2 - We have fabricated a B5C, boron-carbide/Si(111) heterojunction diode by the synchrotron radiation-induced decomposition of orthocarborane. This diode can be compared with similar boron-carbide/Si(111) heterojunction diodes fabricated by plasma enhanced chemical vapor deposition. The synchrotron radiation induced chemical vapor deposition is postulated to occur via the decomposition of weakly chemisorbed species and the results suggest that "real-time" projection lithography (selective area deposition) of boron-carbide devices is possible.

AB - We have fabricated a B5C, boron-carbide/Si(111) heterojunction diode by the synchrotron radiation-induced decomposition of orthocarborane. This diode can be compared with similar boron-carbide/Si(111) heterojunction diodes fabricated by plasma enhanced chemical vapor deposition. The synchrotron radiation induced chemical vapor deposition is postulated to occur via the decomposition of weakly chemisorbed species and the results suggest that "real-time" projection lithography (selective area deposition) of boron-carbide devices is possible.

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U2 - 10.1063/1.111758

DO - 10.1063/1.111758

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SP - 1968

EP - 1970

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Heterojunction fabrication by selective area chemical vapor deposition induced by synchrotron radiation

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