Heterostructural characterization of pseudomorphic, partially strained, and highly mismatched semiconductors using double crystal x-ray diffraction, TEM, and SEM

Hyung Mun Kim, Sang Gi Kim, Sahn Nahm, Hyung Ho Park, Hae Kwon Lee, Jae Jin Lee, Kyung Ik Cho, Heung Ro Choo, Hong Man Kim, Hyung Moo Park, Sin Chong Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Heterostructural properties of pseudomorphic (AlGaAs/GaAs), partially strained (GaInAs/GaAs), and highly strained (GaAs/Si) semiconductor systems have been studied using High Resolution Double-Crystal X-ray Diffraction (DXRD), Transmission Electron Microscopy (TEM), and Scanning Electron Microscopy (SEM). Using the high resolution DXRD with CuKα 1 and two-reflection Si (220) monochromator, we obtained (004) symmetric and (115) or (224) asymmetric reflection rocking curves for samples grown by molecular beam epitaxy. With 0.5 μm thick samples, perpendicular and in-plane lattice mismatches were calculated using elastic theory and compared with each other. The different degree of relaxation for these samples was observed and correlated with the lattice mismatch, X-ray layer peak broadening (i.e., full width at half maximum), and SEM surface morphology. For a GaInAs/GaAs sample, the strain relaxation along one of the 〈110〉 directions was more than the other direction, that is, the strain relaxation is not isotrophic. Also we observed that the lines were mainly parallel in one direction, i.e., they did not form a cross-hatch pattern. TEM images from both cross-sectional and planar views of the samples will be presented.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages343-348
Number of pages6
Volume340
Publication statusPublished - 1994
Externally publishedYes
EventProceedings of the MRS Symposium - San Francisco, CA, USA
Duration: 1994 Apr 41994 Apr 7

Other

OtherProceedings of the MRS Symposium
CitySan Francisco, CA, USA
Period94/4/494/4/7

Fingerprint

Strain relaxation
Lattice mismatch
Diffraction
Semiconductor materials
Transmission electron microscopy
Hatches
X ray diffraction
X rays
Crystals
Scanning electron microscopy
Monochromators
Full width at half maximum
Molecular beam epitaxy
Surface morphology
gallium arsenide
Direction compound

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Kim, H. M., Kim, S. G., Nahm, S., Park, H. H., Lee, H. K., Lee, J. J., ... Park, S. C. (1994). Heterostructural characterization of pseudomorphic, partially strained, and highly mismatched semiconductors using double crystal x-ray diffraction, TEM, and SEM. In Materials Research Society Symposium - Proceedings (Vol. 340, pp. 343-348). Materials Research Society.

Heterostructural characterization of pseudomorphic, partially strained, and highly mismatched semiconductors using double crystal x-ray diffraction, TEM, and SEM. / Kim, Hyung Mun; Kim, Sang Gi; Nahm, Sahn; Park, Hyung Ho; Lee, Hae Kwon; Lee, Jae Jin; Cho, Kyung Ik; Choo, Heung Ro; Kim, Hong Man; Park, Hyung Moo; Park, Sin Chong.

Materials Research Society Symposium - Proceedings. Vol. 340 Materials Research Society, 1994. p. 343-348.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kim, HM, Kim, SG, Nahm, S, Park, HH, Lee, HK, Lee, JJ, Cho, KI, Choo, HR, Kim, HM, Park, HM & Park, SC 1994, Heterostructural characterization of pseudomorphic, partially strained, and highly mismatched semiconductors using double crystal x-ray diffraction, TEM, and SEM. in Materials Research Society Symposium - Proceedings. vol. 340, Materials Research Society, pp. 343-348, Proceedings of the MRS Symposium, San Francisco, CA, USA, 94/4/4.
Kim HM, Kim SG, Nahm S, Park HH, Lee HK, Lee JJ et al. Heterostructural characterization of pseudomorphic, partially strained, and highly mismatched semiconductors using double crystal x-ray diffraction, TEM, and SEM. In Materials Research Society Symposium - Proceedings. Vol. 340. Materials Research Society. 1994. p. 343-348
Kim, Hyung Mun ; Kim, Sang Gi ; Nahm, Sahn ; Park, Hyung Ho ; Lee, Hae Kwon ; Lee, Jae Jin ; Cho, Kyung Ik ; Choo, Heung Ro ; Kim, Hong Man ; Park, Hyung Moo ; Park, Sin Chong. / Heterostructural characterization of pseudomorphic, partially strained, and highly mismatched semiconductors using double crystal x-ray diffraction, TEM, and SEM. Materials Research Society Symposium - Proceedings. Vol. 340 Materials Research Society, 1994. pp. 343-348
@inproceedings{1b66821a1cf44c54aaaad6e583670445,
title = "Heterostructural characterization of pseudomorphic, partially strained, and highly mismatched semiconductors using double crystal x-ray diffraction, TEM, and SEM",
abstract = "Heterostructural properties of pseudomorphic (AlGaAs/GaAs), partially strained (GaInAs/GaAs), and highly strained (GaAs/Si) semiconductor systems have been studied using High Resolution Double-Crystal X-ray Diffraction (DXRD), Transmission Electron Microscopy (TEM), and Scanning Electron Microscopy (SEM). Using the high resolution DXRD with CuKα 1 and two-reflection Si (220) monochromator, we obtained (004) symmetric and (115) or (224) asymmetric reflection rocking curves for samples grown by molecular beam epitaxy. With 0.5 μm thick samples, perpendicular and in-plane lattice mismatches were calculated using elastic theory and compared with each other. The different degree of relaxation for these samples was observed and correlated with the lattice mismatch, X-ray layer peak broadening (i.e., full width at half maximum), and SEM surface morphology. For a GaInAs/GaAs sample, the strain relaxation along one of the 〈110〉 directions was more than the other direction, that is, the strain relaxation is not isotrophic. Also we observed that the lines were mainly parallel in one direction, i.e., they did not form a cross-hatch pattern. TEM images from both cross-sectional and planar views of the samples will be presented.",
author = "Kim, {Hyung Mun} and Kim, {Sang Gi} and Sahn Nahm and Park, {Hyung Ho} and Lee, {Hae Kwon} and Lee, {Jae Jin} and Cho, {Kyung Ik} and Choo, {Heung Ro} and Kim, {Hong Man} and Park, {Hyung Moo} and Park, {Sin Chong}",
year = "1994",
language = "English",
volume = "340",
pages = "343--348",
booktitle = "Materials Research Society Symposium - Proceedings",
publisher = "Materials Research Society",

}

TY - GEN

T1 - Heterostructural characterization of pseudomorphic, partially strained, and highly mismatched semiconductors using double crystal x-ray diffraction, TEM, and SEM

AU - Kim, Hyung Mun

AU - Kim, Sang Gi

AU - Nahm, Sahn

AU - Park, Hyung Ho

AU - Lee, Hae Kwon

AU - Lee, Jae Jin

AU - Cho, Kyung Ik

AU - Choo, Heung Ro

AU - Kim, Hong Man

AU - Park, Hyung Moo

AU - Park, Sin Chong

PY - 1994

Y1 - 1994

N2 - Heterostructural properties of pseudomorphic (AlGaAs/GaAs), partially strained (GaInAs/GaAs), and highly strained (GaAs/Si) semiconductor systems have been studied using High Resolution Double-Crystal X-ray Diffraction (DXRD), Transmission Electron Microscopy (TEM), and Scanning Electron Microscopy (SEM). Using the high resolution DXRD with CuKα 1 and two-reflection Si (220) monochromator, we obtained (004) symmetric and (115) or (224) asymmetric reflection rocking curves for samples grown by molecular beam epitaxy. With 0.5 μm thick samples, perpendicular and in-plane lattice mismatches were calculated using elastic theory and compared with each other. The different degree of relaxation for these samples was observed and correlated with the lattice mismatch, X-ray layer peak broadening (i.e., full width at half maximum), and SEM surface morphology. For a GaInAs/GaAs sample, the strain relaxation along one of the 〈110〉 directions was more than the other direction, that is, the strain relaxation is not isotrophic. Also we observed that the lines were mainly parallel in one direction, i.e., they did not form a cross-hatch pattern. TEM images from both cross-sectional and planar views of the samples will be presented.

AB - Heterostructural properties of pseudomorphic (AlGaAs/GaAs), partially strained (GaInAs/GaAs), and highly strained (GaAs/Si) semiconductor systems have been studied using High Resolution Double-Crystal X-ray Diffraction (DXRD), Transmission Electron Microscopy (TEM), and Scanning Electron Microscopy (SEM). Using the high resolution DXRD with CuKα 1 and two-reflection Si (220) monochromator, we obtained (004) symmetric and (115) or (224) asymmetric reflection rocking curves for samples grown by molecular beam epitaxy. With 0.5 μm thick samples, perpendicular and in-plane lattice mismatches were calculated using elastic theory and compared with each other. The different degree of relaxation for these samples was observed and correlated with the lattice mismatch, X-ray layer peak broadening (i.e., full width at half maximum), and SEM surface morphology. For a GaInAs/GaAs sample, the strain relaxation along one of the 〈110〉 directions was more than the other direction, that is, the strain relaxation is not isotrophic. Also we observed that the lines were mainly parallel in one direction, i.e., they did not form a cross-hatch pattern. TEM images from both cross-sectional and planar views of the samples will be presented.

UR - http://www.scopus.com/inward/record.url?scp=0028573853&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028573853&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0028573853

VL - 340

SP - 343

EP - 348

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

ER -