Heterostructure WSe2-Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics

Janghyuk Kim, Michael A. Mastro, Marko J. Tadjer, Ji Hyun Kim

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Layered materials separated from each bulk crystal can be assembled to form a strain-free heterostructure by using the van der Waals interaction. We demonstrated a heterostructure n-channel depletion-mode β-Ga2O3 junction field-effect transistor (JFET) through van der Waals bonding with an exfoliated p-WSe2 flake. Typical diode characteristics with a high rectifying ratio of ∼105 were observed in a p-WSe2/n-Ga2O3 heterostructure diode, where WSe2 and β-Ga2O3 were obtained by mechanically exfoliating each crystal. Layered JFETs exhibited an excellent IDS-VDS output as well as IDS-VGS transfer characteristics with a high on/off ratio (∼108) and low subthreshold swing (133 mV/dec). Saturated output currents were observed with a threshold voltage of -5.1 V and a three-terminal breakdown voltage of +144 V. Electrical performances of the fabricated heterostructure JFET were maintained at elevated temperatures with outstanding air stability. Our WSe2-Ga2O3 heterostructure JFET paves the way to the low-dimensional high-power devices, enabling miniaturization of the integrated power electronic systems.

Original languageEnglish
Pages (from-to)29724-29729
Number of pages6
JournalACS Applied Materials and Interfaces
Volume10
Issue number35
DOIs
Publication statusPublished - 2018 Sep 5

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Field effect transistors
Power electronics
Heterojunctions
Diodes
Junction gate field effect transistors
Crystals
Electric breakdown
Threshold voltage
Air
Temperature

Keywords

  • field-effect transistor
  • gallium oxide
  • heterostructure
  • two-dimensional material
  • wide bandgap semiconductor

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Heterostructure WSe2-Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics. / Kim, Janghyuk; Mastro, Michael A.; Tadjer, Marko J.; Kim, Ji Hyun.

In: ACS Applied Materials and Interfaces, Vol. 10, No. 35, 05.09.2018, p. 29724-29729.

Research output: Contribution to journalArticle

Kim, Janghyuk ; Mastro, Michael A. ; Tadjer, Marko J. ; Kim, Ji Hyun. / Heterostructure WSe2-Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics. In: ACS Applied Materials and Interfaces. 2018 ; Vol. 10, No. 35. pp. 29724-29729.
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