Abstract
Layered materials separated from each bulk crystal can be assembled to form a strain-free heterostructure by using the van der Waals interaction. We demonstrated a heterostructure n-channel depletion-mode β-Ga2O3 junction field-effect transistor (JFET) through van der Waals bonding with an exfoliated p-WSe2 flake. Typical diode characteristics with a high rectifying ratio of ∼105 were observed in a p-WSe2/n-Ga2O3 heterostructure diode, where WSe2 and β-Ga2O3 were obtained by mechanically exfoliating each crystal. Layered JFETs exhibited an excellent IDS-VDS output as well as IDS-VGS transfer characteristics with a high on/off ratio (∼108) and low subthreshold swing (133 mV/dec). Saturated output currents were observed with a threshold voltage of -5.1 V and a three-terminal breakdown voltage of +144 V. Electrical performances of the fabricated heterostructure JFET were maintained at elevated temperatures with outstanding air stability. Our WSe2-Ga2O3 heterostructure JFET paves the way to the low-dimensional high-power devices, enabling miniaturization of the integrated power electronic systems.
| Original language | English |
|---|---|
| Pages (from-to) | 29724-29729 |
| Number of pages | 6 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 10 |
| Issue number | 35 |
| DOIs | |
| Publication status | Published - 2018 Sep 5 |
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Keywords
- field-effect transistor
- gallium oxide
- heterostructure
- two-dimensional material
- wide bandgap semiconductor
ASJC Scopus subject areas
- Materials Science(all)
Cite this
Heterostructure WSe2-Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics. / Kim, Janghyuk; Mastro, Michael A.; Tadjer, Marko J.; Kim, Ji Hyun.
In: ACS Applied Materials and Interfaces, Vol. 10, No. 35, 05.09.2018, p. 29724-29729.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Heterostructure WSe2-Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics
AU - Kim, Janghyuk
AU - Mastro, Michael A.
AU - Tadjer, Marko J.
AU - Kim, Ji Hyun
PY - 2018/9/5
Y1 - 2018/9/5
N2 - Layered materials separated from each bulk crystal can be assembled to form a strain-free heterostructure by using the van der Waals interaction. We demonstrated a heterostructure n-channel depletion-mode β-Ga2O3 junction field-effect transistor (JFET) through van der Waals bonding with an exfoliated p-WSe2 flake. Typical diode characteristics with a high rectifying ratio of ∼105 were observed in a p-WSe2/n-Ga2O3 heterostructure diode, where WSe2 and β-Ga2O3 were obtained by mechanically exfoliating each crystal. Layered JFETs exhibited an excellent IDS-VDS output as well as IDS-VGS transfer characteristics with a high on/off ratio (∼108) and low subthreshold swing (133 mV/dec). Saturated output currents were observed with a threshold voltage of -5.1 V and a three-terminal breakdown voltage of +144 V. Electrical performances of the fabricated heterostructure JFET were maintained at elevated temperatures with outstanding air stability. Our WSe2-Ga2O3 heterostructure JFET paves the way to the low-dimensional high-power devices, enabling miniaturization of the integrated power electronic systems.
AB - Layered materials separated from each bulk crystal can be assembled to form a strain-free heterostructure by using the van der Waals interaction. We demonstrated a heterostructure n-channel depletion-mode β-Ga2O3 junction field-effect transistor (JFET) through van der Waals bonding with an exfoliated p-WSe2 flake. Typical diode characteristics with a high rectifying ratio of ∼105 were observed in a p-WSe2/n-Ga2O3 heterostructure diode, where WSe2 and β-Ga2O3 were obtained by mechanically exfoliating each crystal. Layered JFETs exhibited an excellent IDS-VDS output as well as IDS-VGS transfer characteristics with a high on/off ratio (∼108) and low subthreshold swing (133 mV/dec). Saturated output currents were observed with a threshold voltage of -5.1 V and a three-terminal breakdown voltage of +144 V. Electrical performances of the fabricated heterostructure JFET were maintained at elevated temperatures with outstanding air stability. Our WSe2-Ga2O3 heterostructure JFET paves the way to the low-dimensional high-power devices, enabling miniaturization of the integrated power electronic systems.
KW - field-effect transistor
KW - gallium oxide
KW - heterostructure
KW - two-dimensional material
KW - wide bandgap semiconductor
UR - http://www.scopus.com/inward/record.url?scp=85052474259&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85052474259&partnerID=8YFLogxK
U2 - 10.1021/acsami.8b07030
DO - 10.1021/acsami.8b07030
M3 - Article
C2 - 30092634
AN - SCOPUS:85052474259
VL - 10
SP - 29724
EP - 29729
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 35
ER -