Heterostructure WSe2-Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics

Janghyuk Kim, Michael A. Mastro, Marko J. Tadjer, Ji Hyun Kim

Research output: Contribution to journalArticlepeer-review

72 Citations (Scopus)


Layered materials separated from each bulk crystal can be assembled to form a strain-free heterostructure by using the van der Waals interaction. We demonstrated a heterostructure n-channel depletion-mode β-Ga2O3 junction field-effect transistor (JFET) through van der Waals bonding with an exfoliated p-WSe2 flake. Typical diode characteristics with a high rectifying ratio of ∼105 were observed in a p-WSe2/n-Ga2O3 heterostructure diode, where WSe2 and β-Ga2O3 were obtained by mechanically exfoliating each crystal. Layered JFETs exhibited an excellent IDS-VDS output as well as IDS-VGS transfer characteristics with a high on/off ratio (∼108) and low subthreshold swing (133 mV/dec). Saturated output currents were observed with a threshold voltage of -5.1 V and a three-terminal breakdown voltage of +144 V. Electrical performances of the fabricated heterostructure JFET were maintained at elevated temperatures with outstanding air stability. Our WSe2-Ga2O3 heterostructure JFET paves the way to the low-dimensional high-power devices, enabling miniaturization of the integrated power electronic systems.

Original languageEnglish
Pages (from-to)29724-29729
Number of pages6
JournalACS Applied Materials and Interfaces
Issue number35
Publication statusPublished - 2018 Sep 5


  • field-effect transistor
  • gallium oxide
  • heterostructure
  • two-dimensional material
  • wide bandgap semiconductor

ASJC Scopus subject areas

  • Materials Science(all)


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