Heterostructures in GaInP grown using a change in V/III ratio

Y. S. Chun, H. Murata, S. H. Lee, I. H. Ho, T. C. Hsu, G. B. Stringfellow, C. E. Inglefield, M. C. DeLong, P. C. Taylor, J. H. Kim, Tae Yeon Seong

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A natural monolayer {111} superlattice (the CuPt ordered structure) is formed spontaneously during organometallic vapor phase epitaxial (OMVPE) growth of Ga0.52In0.48P. The extent of this ordering process is found to be a strong function of the input partial pressure of the phosphorus precursor during growth due to the effect of this parameter on the surface reconstruction and step structure. Thus, heterostructures can be produced by simply changing the flow rate of the P precursor during growth. It is found, by examination of transmission electron microscope (TEM) and atomic force microscope (AFM) images, and the photoluminescence (PL) and PL excitation (PLE) spectra, that order/disorder (O/D) (really less ordered on more ordered) heterostructures formed by decreasing the partial pressure of the P precursor during the OMVPE growth cycle at a temperature of 620 0C are graded over several thousands of Å when PH3 is the precursor. The ordered structure from the lower layer persists into the upper layer. Similarly, D/O structures produced by increasing the PH3 flow rate yield PL spectra also indicative of a graded composition at the heterostructure. The grading is not reduced by a 1 h interruption in the growth cycle at the interface. Similar heterostructures produced at 670 °C using tertiarybutylphosphine (TBP) as the P precursor show a totally different behavior. Abrupt D/O and O/D heterostructures can be produced by abruptly changing the TBP flow rate during the growth cycle. PL and PLE studies show distinct peaks closely corresponding to those observed for the corresponding single layers. TEM dark field images also indicate that the interfaces in both for D/O and O/D heterostructures are abrupt. The cause of the difference in behavior for TBP and PH3 is not clear. It may be related to the difference in temperature.

Original languageEnglish
Pages (from-to)7778-7786
Number of pages9
JournalJournal of Applied Physics
Volume81
Issue number12
Publication statusPublished - 1997 Jun 15
Externally publishedYes

Fingerprint

photoluminescence
flow velocity
disorders
cycles
partial pressure
electron microscopes
vapor phases
interruption
excitation
phosphorus
examination
microscopes
temperature
causes

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Chun, Y. S., Murata, H., Lee, S. H., Ho, I. H., Hsu, T. C., Stringfellow, G. B., ... Seong, T. Y. (1997). Heterostructures in GaInP grown using a change in V/III ratio. Journal of Applied Physics, 81(12), 7778-7786.

Heterostructures in GaInP grown using a change in V/III ratio. / Chun, Y. S.; Murata, H.; Lee, S. H.; Ho, I. H.; Hsu, T. C.; Stringfellow, G. B.; Inglefield, C. E.; DeLong, M. C.; Taylor, P. C.; Kim, J. H.; Seong, Tae Yeon.

In: Journal of Applied Physics, Vol. 81, No. 12, 15.06.1997, p. 7778-7786.

Research output: Contribution to journalArticle

Chun, YS, Murata, H, Lee, SH, Ho, IH, Hsu, TC, Stringfellow, GB, Inglefield, CE, DeLong, MC, Taylor, PC, Kim, JH & Seong, TY 1997, 'Heterostructures in GaInP grown using a change in V/III ratio', Journal of Applied Physics, vol. 81, no. 12, pp. 7778-7786.
Chun YS, Murata H, Lee SH, Ho IH, Hsu TC, Stringfellow GB et al. Heterostructures in GaInP grown using a change in V/III ratio. Journal of Applied Physics. 1997 Jun 15;81(12):7778-7786.
Chun, Y. S. ; Murata, H. ; Lee, S. H. ; Ho, I. H. ; Hsu, T. C. ; Stringfellow, G. B. ; Inglefield, C. E. ; DeLong, M. C. ; Taylor, P. C. ; Kim, J. H. ; Seong, Tae Yeon. / Heterostructures in GaInP grown using a change in V/III ratio. In: Journal of Applied Physics. 1997 ; Vol. 81, No. 12. pp. 7778-7786.
@article{c79ee863ee8643c48d9e5f076d9b4c60,
title = "Heterostructures in GaInP grown using a change in V/III ratio",
abstract = "A natural monolayer {111} superlattice (the CuPt ordered structure) is formed spontaneously during organometallic vapor phase epitaxial (OMVPE) growth of Ga0.52In0.48P. The extent of this ordering process is found to be a strong function of the input partial pressure of the phosphorus precursor during growth due to the effect of this parameter on the surface reconstruction and step structure. Thus, heterostructures can be produced by simply changing the flow rate of the P precursor during growth. It is found, by examination of transmission electron microscope (TEM) and atomic force microscope (AFM) images, and the photoluminescence (PL) and PL excitation (PLE) spectra, that order/disorder (O/D) (really less ordered on more ordered) heterostructures formed by decreasing the partial pressure of the P precursor during the OMVPE growth cycle at a temperature of 620 0C are graded over several thousands of {\AA} when PH3 is the precursor. The ordered structure from the lower layer persists into the upper layer. Similarly, D/O structures produced by increasing the PH3 flow rate yield PL spectra also indicative of a graded composition at the heterostructure. The grading is not reduced by a 1 h interruption in the growth cycle at the interface. Similar heterostructures produced at 670 °C using tertiarybutylphosphine (TBP) as the P precursor show a totally different behavior. Abrupt D/O and O/D heterostructures can be produced by abruptly changing the TBP flow rate during the growth cycle. PL and PLE studies show distinct peaks closely corresponding to those observed for the corresponding single layers. TEM dark field images also indicate that the interfaces in both for D/O and O/D heterostructures are abrupt. The cause of the difference in behavior for TBP and PH3 is not clear. It may be related to the difference in temperature.",
author = "Chun, {Y. S.} and H. Murata and Lee, {S. H.} and Ho, {I. H.} and Hsu, {T. C.} and Stringfellow, {G. B.} and Inglefield, {C. E.} and DeLong, {M. C.} and Taylor, {P. C.} and Kim, {J. H.} and Seong, {Tae Yeon}",
year = "1997",
month = "6",
day = "15",
language = "English",
volume = "81",
pages = "7778--7786",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

TY - JOUR

T1 - Heterostructures in GaInP grown using a change in V/III ratio

AU - Chun, Y. S.

AU - Murata, H.

AU - Lee, S. H.

AU - Ho, I. H.

AU - Hsu, T. C.

AU - Stringfellow, G. B.

AU - Inglefield, C. E.

AU - DeLong, M. C.

AU - Taylor, P. C.

AU - Kim, J. H.

AU - Seong, Tae Yeon

PY - 1997/6/15

Y1 - 1997/6/15

N2 - A natural monolayer {111} superlattice (the CuPt ordered structure) is formed spontaneously during organometallic vapor phase epitaxial (OMVPE) growth of Ga0.52In0.48P. The extent of this ordering process is found to be a strong function of the input partial pressure of the phosphorus precursor during growth due to the effect of this parameter on the surface reconstruction and step structure. Thus, heterostructures can be produced by simply changing the flow rate of the P precursor during growth. It is found, by examination of transmission electron microscope (TEM) and atomic force microscope (AFM) images, and the photoluminescence (PL) and PL excitation (PLE) spectra, that order/disorder (O/D) (really less ordered on more ordered) heterostructures formed by decreasing the partial pressure of the P precursor during the OMVPE growth cycle at a temperature of 620 0C are graded over several thousands of Å when PH3 is the precursor. The ordered structure from the lower layer persists into the upper layer. Similarly, D/O structures produced by increasing the PH3 flow rate yield PL spectra also indicative of a graded composition at the heterostructure. The grading is not reduced by a 1 h interruption in the growth cycle at the interface. Similar heterostructures produced at 670 °C using tertiarybutylphosphine (TBP) as the P precursor show a totally different behavior. Abrupt D/O and O/D heterostructures can be produced by abruptly changing the TBP flow rate during the growth cycle. PL and PLE studies show distinct peaks closely corresponding to those observed for the corresponding single layers. TEM dark field images also indicate that the interfaces in both for D/O and O/D heterostructures are abrupt. The cause of the difference in behavior for TBP and PH3 is not clear. It may be related to the difference in temperature.

AB - A natural monolayer {111} superlattice (the CuPt ordered structure) is formed spontaneously during organometallic vapor phase epitaxial (OMVPE) growth of Ga0.52In0.48P. The extent of this ordering process is found to be a strong function of the input partial pressure of the phosphorus precursor during growth due to the effect of this parameter on the surface reconstruction and step structure. Thus, heterostructures can be produced by simply changing the flow rate of the P precursor during growth. It is found, by examination of transmission electron microscope (TEM) and atomic force microscope (AFM) images, and the photoluminescence (PL) and PL excitation (PLE) spectra, that order/disorder (O/D) (really less ordered on more ordered) heterostructures formed by decreasing the partial pressure of the P precursor during the OMVPE growth cycle at a temperature of 620 0C are graded over several thousands of Å when PH3 is the precursor. The ordered structure from the lower layer persists into the upper layer. Similarly, D/O structures produced by increasing the PH3 flow rate yield PL spectra also indicative of a graded composition at the heterostructure. The grading is not reduced by a 1 h interruption in the growth cycle at the interface. Similar heterostructures produced at 670 °C using tertiarybutylphosphine (TBP) as the P precursor show a totally different behavior. Abrupt D/O and O/D heterostructures can be produced by abruptly changing the TBP flow rate during the growth cycle. PL and PLE studies show distinct peaks closely corresponding to those observed for the corresponding single layers. TEM dark field images also indicate that the interfaces in both for D/O and O/D heterostructures are abrupt. The cause of the difference in behavior for TBP and PH3 is not clear. It may be related to the difference in temperature.

UR - http://www.scopus.com/inward/record.url?scp=0001481655&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001481655&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0001481655

VL - 81

SP - 7778

EP - 7786

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 12

ER -