Abstract
HgTe nanocrystal-based thin-film transistors (TFTs) with Al2 O3 top-gate dielectrics were fabricated on glass substrates using sintered HgTe nanocrystals as the channel layers. To the best of our knowledge, this is the first report on the fabrication of nanocrystal-based TFTs on glass substrates. Colloidal HgTe nanocrystal films were first formed on the glass substrates by spin-coating. The HgTe nanocrystal films were then sintered at 150 °C, leading to a dramatic increase in their conductance, compared with the as-deposited films. The TFTs fabricated in this letter exhibit the typical characteristics of p-channel transistors with a field-effect mobility of 1.04 cm2/V.s, a threshold voltage of +0.2 V, and an ON/OFF current ratio of 1 × 103. These results suggest that spin-coating and sintering at a low temperature enable the simple and low-cost fabrication of nanocrystal-based TFTs on glass substrates.
| Original language | English |
|---|---|
| Pages (from-to) | 42-44 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 28 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2007 Jan 1 |
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Keywords
- AlO
- HgTe nanocrystal
- Solution process
- Thin-film transistor (TFT)
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
HgTe nanocrystal-based thin-film transistors fabricated on glass substrates. / Kim, Hyunsuk; Kim, Dong Won; Cho, Kyoungah; Kim, Sangsig.
In: IEEE Electron Device Letters, Vol. 28, No. 1, 01.01.2007, p. 42-44.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - HgTe nanocrystal-based thin-film transistors fabricated on glass substrates
AU - Kim, Hyunsuk
AU - Kim, Dong Won
AU - Cho, Kyoungah
AU - Kim, Sangsig
PY - 2007/1/1
Y1 - 2007/1/1
N2 - HgTe nanocrystal-based thin-film transistors (TFTs) with Al2 O3 top-gate dielectrics were fabricated on glass substrates using sintered HgTe nanocrystals as the channel layers. To the best of our knowledge, this is the first report on the fabrication of nanocrystal-based TFTs on glass substrates. Colloidal HgTe nanocrystal films were first formed on the glass substrates by spin-coating. The HgTe nanocrystal films were then sintered at 150 °C, leading to a dramatic increase in their conductance, compared with the as-deposited films. The TFTs fabricated in this letter exhibit the typical characteristics of p-channel transistors with a field-effect mobility of 1.04 cm2/V.s, a threshold voltage of +0.2 V, and an ON/OFF current ratio of 1 × 103. These results suggest that spin-coating and sintering at a low temperature enable the simple and low-cost fabrication of nanocrystal-based TFTs on glass substrates.
AB - HgTe nanocrystal-based thin-film transistors (TFTs) with Al2 O3 top-gate dielectrics were fabricated on glass substrates using sintered HgTe nanocrystals as the channel layers. To the best of our knowledge, this is the first report on the fabrication of nanocrystal-based TFTs on glass substrates. Colloidal HgTe nanocrystal films were first formed on the glass substrates by spin-coating. The HgTe nanocrystal films were then sintered at 150 °C, leading to a dramatic increase in their conductance, compared with the as-deposited films. The TFTs fabricated in this letter exhibit the typical characteristics of p-channel transistors with a field-effect mobility of 1.04 cm2/V.s, a threshold voltage of +0.2 V, and an ON/OFF current ratio of 1 × 103. These results suggest that spin-coating and sintering at a low temperature enable the simple and low-cost fabrication of nanocrystal-based TFTs on glass substrates.
KW - AlO
KW - HgTe nanocrystal
KW - Solution process
KW - Thin-film transistor (TFT)
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U2 - 10.1109/LED.2006.888191
DO - 10.1109/LED.2006.888191
M3 - Article
VL - 28
SP - 42
EP - 44
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 1
ER -