HgTe nanocrystal-based thin-film transistors fabricated on glass substrates

Hyunsuk Kim; Dong Won Kim; Kyoungah Cho; Sangsig Kim

doi:10.1109/LED.2006.888191

HgTe nanocrystal-based thin-film transistors fabricated on glass substrates

Hyunsuk Kim, Dong Won Kim, Kyoungah Cho, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

HgTe nanocrystal-based thin-film transistors (TFTs) with Al₂ O₃ top-gate dielectrics were fabricated on glass substrates using sintered HgTe nanocrystals as the channel layers. To the best of our knowledge, this is the first report on the fabrication of nanocrystal-based TFTs on glass substrates. Colloidal HgTe nanocrystal films were first formed on the glass substrates by spin-coating. The HgTe nanocrystal films were then sintered at 150 °C, leading to a dramatic increase in their conductance, compared with the as-deposited films. The TFTs fabricated in this letter exhibit the typical characteristics of p-channel transistors with a field-effect mobility of 1.04 cm²/V.s, a threshold voltage of +0.2 V, and an ON/OFF current ratio of 1 × 10³. These results suggest that spin-coating and sintering at a low temperature enable the simple and low-cost fabrication of nanocrystal-based TFTs on glass substrates.

Original language	English
Pages (from-to)	42-44
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	28
Issue number	1
DOIs	https://doi.org/10.1109/LED.2006.888191
Publication status	Published - 2007 Jan

Keywords

AlO
HgTe nanocrystal
Solution process
Thin-film transistor (TFT)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2006.888191

Fingerprint Dive into the research topics of 'HgTe nanocrystal-based thin-film transistors fabricated on glass substrates'. Together they form a unique fingerprint.

Cite this

@article{4b27ece876334b63accdbc5058a99df3,

title = "HgTe nanocrystal-based thin-film transistors fabricated on glass substrates",

abstract = "HgTe nanocrystal-based thin-film transistors (TFTs) with Al2 O3 top-gate dielectrics were fabricated on glass substrates using sintered HgTe nanocrystals as the channel layers. To the best of our knowledge, this is the first report on the fabrication of nanocrystal-based TFTs on glass substrates. Colloidal HgTe nanocrystal films were first formed on the glass substrates by spin-coating. The HgTe nanocrystal films were then sintered at 150 °C, leading to a dramatic increase in their conductance, compared with the as-deposited films. The TFTs fabricated in this letter exhibit the typical characteristics of p-channel transistors with a field-effect mobility of 1.04 cm2/V.s, a threshold voltage of +0.2 V, and an ON/OFF current ratio of 1 × 103. These results suggest that spin-coating and sintering at a low temperature enable the simple and low-cost fabrication of nanocrystal-based TFTs on glass substrates.",

keywords = "AlO, HgTe nanocrystal, Solution process, Thin-film transistor (TFT)",

author = "Hyunsuk Kim and Kim, {Dong Won} and Kyoungah Cho and Sangsig Kim",

note = "Funding Information: Manuscript received July 13, 2006; revised November 2, 2006. This work was supported in part by the National Research Program for the 0.1-Terabit Non-Volatile Memory Development (10022965-2005-11), in part by the National Research Laboratory (M10500000045-05J0000-04510), in part by the National R&D Project for Nano Science and Technology (10022916-2005-21), and in part by the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (KRF-2005-005-D00087). The review of this letter was arranged by Editor J. Sin.",

year = "2007",

month = jan,

doi = "10.1109/LED.2006.888191",

language = "English",

volume = "28",

pages = "42--44",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - HgTe nanocrystal-based thin-film transistors fabricated on glass substrates

AU - Kim, Hyunsuk

AU - Kim, Dong Won

AU - Cho, Kyoungah

AU - Kim, Sangsig

N1 - Funding Information: Manuscript received July 13, 2006; revised November 2, 2006. This work was supported in part by the National Research Program for the 0.1-Terabit Non-Volatile Memory Development (10022965-2005-11), in part by the National Research Laboratory (M10500000045-05J0000-04510), in part by the National R&D Project for Nano Science and Technology (10022916-2005-21), and in part by the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (KRF-2005-005-D00087). The review of this letter was arranged by Editor J. Sin.

PY - 2007/1

Y1 - 2007/1

N2 - HgTe nanocrystal-based thin-film transistors (TFTs) with Al2 O3 top-gate dielectrics were fabricated on glass substrates using sintered HgTe nanocrystals as the channel layers. To the best of our knowledge, this is the first report on the fabrication of nanocrystal-based TFTs on glass substrates. Colloidal HgTe nanocrystal films were first formed on the glass substrates by spin-coating. The HgTe nanocrystal films were then sintered at 150 °C, leading to a dramatic increase in their conductance, compared with the as-deposited films. The TFTs fabricated in this letter exhibit the typical characteristics of p-channel transistors with a field-effect mobility of 1.04 cm2/V.s, a threshold voltage of +0.2 V, and an ON/OFF current ratio of 1 × 103. These results suggest that spin-coating and sintering at a low temperature enable the simple and low-cost fabrication of nanocrystal-based TFTs on glass substrates.

AB - HgTe nanocrystal-based thin-film transistors (TFTs) with Al2 O3 top-gate dielectrics were fabricated on glass substrates using sintered HgTe nanocrystals as the channel layers. To the best of our knowledge, this is the first report on the fabrication of nanocrystal-based TFTs on glass substrates. Colloidal HgTe nanocrystal films were first formed on the glass substrates by spin-coating. The HgTe nanocrystal films were then sintered at 150 °C, leading to a dramatic increase in their conductance, compared with the as-deposited films. The TFTs fabricated in this letter exhibit the typical characteristics of p-channel transistors with a field-effect mobility of 1.04 cm2/V.s, a threshold voltage of +0.2 V, and an ON/OFF current ratio of 1 × 103. These results suggest that spin-coating and sintering at a low temperature enable the simple and low-cost fabrication of nanocrystal-based TFTs on glass substrates.

KW - AlO

KW - HgTe nanocrystal

KW - Solution process

KW - Thin-film transistor (TFT)

UR - http://www.scopus.com/inward/record.url?scp=33845972278&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33845972278&partnerID=8YFLogxK

U2 - 10.1109/LED.2006.888191

DO - 10.1109/LED.2006.888191

M3 - Article

AN - SCOPUS:33845972278

VL - 28

SP - 42

EP - 44

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 1

ER -

HgTe nanocrystal-based thin-film transistors fabricated on glass substrates

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this