High breakdown voltage quasi-two-dimensional β-Ga2O3 field-effect transistors with a boron nitride field plate

Jinho Bae, Hyoung Woo Kim, In Ho Kang, Gwangseok Yang, Jihyun Kim

Research output: Contribution to journalArticlepeer-review

77 Citations (Scopus)

Fingerprint

Dive into the research topics of 'High breakdown voltage quasi-two-dimensional β-Ga2O3 field-effect transistors with a boron nitride field plate'. Together they form a unique fingerprint.

Physics & Astronomy