We have fabricated high brightness blue light emitting diode (LED) with InGaN/GaN multi-quantum well (MQW) which is sandwiched simply between n-GaN and p-GaN. The LED epitaxial structure was grown by a newly designed metal organic chemical vapor deposition (MOCVD) system with RF heater and vertical gas injection type showerhead. The reactor exhibited a good uniformity of temperature and gas velocity. The uniformity of layer thickness and PL wavelength was less 2% and 1.2nm, respectively. The epoxy molded LED lamp showed radiant power of 4mW at a forward current of 20mA. We note that the power is very high considering such a simple LED structure.
|Number of pages||3|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 B|
|Publication status||Published - 2005 Apr 1|
ASJC Scopus subject areas
- Physics and Astronomy(all)