High brightness InGaN/GaN blue light emitting diode realized by a 6 × 2″ MOCVD system

Jin Woo Ju, Cheul Ro Lee, Jong Hyeob Baek, Young Hee Lee, In-Hwan Lee

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We have fabricated high brightness blue light emitting diode (LED) with InGaN/GaN multi-quantum well (MQW) which is sandwiched simply between n-GaN and p-GaN. The LED epitaxial structure was grown by a newly designed metal organic chemical vapor deposition (MOCVD) system with RF heater and vertical gas injection type showerhead. The reactor exhibited a good uniformity of temperature and gas velocity. The uniformity of layer thickness and PL wavelength was less 2% and 1.2nm, respectively. The epoxy molded LED lamp showed radiant power of 4mW at a forward current of 20mA. We note that the power is very high considering such a simple LED structure.

Original languageEnglish
Pages (from-to)2506-2508
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number4 B
DOIs
Publication statusPublished - 2005 Apr 1
Externally publishedYes

Fingerprint

Organic chemicals
metalorganic chemical vapor deposition
Light emitting diodes
Chemical vapor deposition
Luminance
brightness
light emitting diodes
Metals
gas injection
Electric lamps
heaters
Semiconductor quantum wells
luminaires
reactors
quantum wells
Wavelength
Gases
gases
wavelengths
Temperature

Keywords

  • InGaN/GaN
  • MOCVD
  • MQW

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

High brightness InGaN/GaN blue light emitting diode realized by a 6 × 2″ MOCVD system. / Ju, Jin Woo; Lee, Cheul Ro; Baek, Jong Hyeob; Lee, Young Hee; Lee, In-Hwan.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 4 B, 01.04.2005, p. 2506-2508.

Research output: Contribution to journalArticle

@article{d0c7f28adfb848a987914a70bdbbfed0,
title = "High brightness InGaN/GaN blue light emitting diode realized by a 6 × 2″ MOCVD system",
abstract = "We have fabricated high brightness blue light emitting diode (LED) with InGaN/GaN multi-quantum well (MQW) which is sandwiched simply between n-GaN and p-GaN. The LED epitaxial structure was grown by a newly designed metal organic chemical vapor deposition (MOCVD) system with RF heater and vertical gas injection type showerhead. The reactor exhibited a good uniformity of temperature and gas velocity. The uniformity of layer thickness and PL wavelength was less 2{\%} and 1.2nm, respectively. The epoxy molded LED lamp showed radiant power of 4mW at a forward current of 20mA. We note that the power is very high considering such a simple LED structure.",
keywords = "InGaN/GaN, MOCVD, MQW",
author = "Ju, {Jin Woo} and Lee, {Cheul Ro} and Baek, {Jong Hyeob} and Lee, {Young Hee} and In-Hwan Lee",
year = "2005",
month = "4",
day = "1",
doi = "10.1143/JJAP.44.2506",
language = "English",
volume = "44",
pages = "2506--2508",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "4 B",

}

TY - JOUR

T1 - High brightness InGaN/GaN blue light emitting diode realized by a 6 × 2″ MOCVD system

AU - Ju, Jin Woo

AU - Lee, Cheul Ro

AU - Baek, Jong Hyeob

AU - Lee, Young Hee

AU - Lee, In-Hwan

PY - 2005/4/1

Y1 - 2005/4/1

N2 - We have fabricated high brightness blue light emitting diode (LED) with InGaN/GaN multi-quantum well (MQW) which is sandwiched simply between n-GaN and p-GaN. The LED epitaxial structure was grown by a newly designed metal organic chemical vapor deposition (MOCVD) system with RF heater and vertical gas injection type showerhead. The reactor exhibited a good uniformity of temperature and gas velocity. The uniformity of layer thickness and PL wavelength was less 2% and 1.2nm, respectively. The epoxy molded LED lamp showed radiant power of 4mW at a forward current of 20mA. We note that the power is very high considering such a simple LED structure.

AB - We have fabricated high brightness blue light emitting diode (LED) with InGaN/GaN multi-quantum well (MQW) which is sandwiched simply between n-GaN and p-GaN. The LED epitaxial structure was grown by a newly designed metal organic chemical vapor deposition (MOCVD) system with RF heater and vertical gas injection type showerhead. The reactor exhibited a good uniformity of temperature and gas velocity. The uniformity of layer thickness and PL wavelength was less 2% and 1.2nm, respectively. The epoxy molded LED lamp showed radiant power of 4mW at a forward current of 20mA. We note that the power is very high considering such a simple LED structure.

KW - InGaN/GaN

KW - MOCVD

KW - MQW

UR - http://www.scopus.com/inward/record.url?scp=21244441006&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21244441006&partnerID=8YFLogxK

U2 - 10.1143/JJAP.44.2506

DO - 10.1143/JJAP.44.2506

M3 - Article

VL - 44

SP - 2506

EP - 2508

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 B

ER -