High brightness InGaN/GaN blue light emitting diode realized by a 6 × 2″ MOCVD system

Jin Woo Ju, Cheul Ro Lee, Jong Hyeob Baek, Young Hee Lee, In Hwan Lee

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We have fabricated high brightness blue light emitting diode (LED) with InGaN/GaN multi-quantum well (MQW) which is sandwiched simply between n-GaN and p-GaN. The LED epitaxial structure was grown by a newly designed metal organic chemical vapor deposition (MOCVD) system with RF heater and vertical gas injection type showerhead. The reactor exhibited a good uniformity of temperature and gas velocity. The uniformity of layer thickness and PL wavelength was less 2% and 1.2nm, respectively. The epoxy molded LED lamp showed radiant power of 4mW at a forward current of 20mA. We note that the power is very high considering such a simple LED structure.

Original languageEnglish
Pages (from-to)2506-2508
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number4 B
DOIs
Publication statusPublished - 2005 Apr
Externally publishedYes

Keywords

  • InGaN/GaN
  • MOCVD
  • MQW

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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