Abstract
A high-brightness GaN-based vertical light-emitting diode (VLED) was demonstrated by introducing a large-area low-cost direct printing process. A hexagonally close-packed micrometer convex array was fabricated on the n-GaN top layer of the VLED by direct printing using a hydrogen silsesquioxane solution and subsequent inductively coupled plasma etching. To confirm that the enhancement of light extraction by this structure, a conventional wet-chemical-etched structure was also fabricated on the n-GaN top layer of the VLED, yielding randomly oriented pyramid structures on the layer. Both VLEDs showed much stronger electroluminescence emission than an unpatterned VLED. However, the micrometer convex array improved the light extraction significantly more than the random pyramid structure owing to its greater ability to enlarge the light escape cone, attributed to its 50°-tapered profile and large extraction area. After chip packaging with silicone encapsulation, the light output power of the micropatterned VLED was 11.4% and 106% greater than those of the wet-etched and unpatterned VLEDs, respectively, under a 350-mA drive current.
| Original language | English |
|---|---|
| Article number | 6678212 |
| Journal | IEEE Photonics Journal |
| Volume | 5 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2013 Dec 1 |
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Keywords
- Light-emitting diodes (LEDs)
- microstructure fabrication
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
Cite this
High-brightness vertical gan-based light-emitting diodes with hexagonally close-packed micrometer array structures. / Byeon, Kyeong Jae; Cho, Joong Yeon; Song, June O.; Lee, Sang Youl; Lee, Heon.
In: IEEE Photonics Journal, Vol. 5, No. 6, 6678212, 01.12.2013.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High-brightness vertical gan-based light-emitting diodes with hexagonally close-packed micrometer array structures
AU - Byeon, Kyeong Jae
AU - Cho, Joong Yeon
AU - Song, June O.
AU - Lee, Sang Youl
AU - Lee, Heon
PY - 2013/12/1
Y1 - 2013/12/1
N2 - A high-brightness GaN-based vertical light-emitting diode (VLED) was demonstrated by introducing a large-area low-cost direct printing process. A hexagonally close-packed micrometer convex array was fabricated on the n-GaN top layer of the VLED by direct printing using a hydrogen silsesquioxane solution and subsequent inductively coupled plasma etching. To confirm that the enhancement of light extraction by this structure, a conventional wet-chemical-etched structure was also fabricated on the n-GaN top layer of the VLED, yielding randomly oriented pyramid structures on the layer. Both VLEDs showed much stronger electroluminescence emission than an unpatterned VLED. However, the micrometer convex array improved the light extraction significantly more than the random pyramid structure owing to its greater ability to enlarge the light escape cone, attributed to its 50°-tapered profile and large extraction area. After chip packaging with silicone encapsulation, the light output power of the micropatterned VLED was 11.4% and 106% greater than those of the wet-etched and unpatterned VLEDs, respectively, under a 350-mA drive current.
AB - A high-brightness GaN-based vertical light-emitting diode (VLED) was demonstrated by introducing a large-area low-cost direct printing process. A hexagonally close-packed micrometer convex array was fabricated on the n-GaN top layer of the VLED by direct printing using a hydrogen silsesquioxane solution and subsequent inductively coupled plasma etching. To confirm that the enhancement of light extraction by this structure, a conventional wet-chemical-etched structure was also fabricated on the n-GaN top layer of the VLED, yielding randomly oriented pyramid structures on the layer. Both VLEDs showed much stronger electroluminescence emission than an unpatterned VLED. However, the micrometer convex array improved the light extraction significantly more than the random pyramid structure owing to its greater ability to enlarge the light escape cone, attributed to its 50°-tapered profile and large extraction area. After chip packaging with silicone encapsulation, the light output power of the micropatterned VLED was 11.4% and 106% greater than those of the wet-etched and unpatterned VLEDs, respectively, under a 350-mA drive current.
KW - Light-emitting diodes (LEDs)
KW - microstructure fabrication
UR - http://www.scopus.com/inward/record.url?scp=84890472859&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84890472859&partnerID=8YFLogxK
U2 - 10.1109/JPHOT.2013.2292314
DO - 10.1109/JPHOT.2013.2292314
M3 - Article
AN - SCOPUS:84890472859
VL - 5
JO - IEEE Photonics Journal
JF - IEEE Photonics Journal
SN - 1943-0655
IS - 6
M1 - 6678212
ER -