High-capacitance metal-insulator-metal capacitors using amorphous Sm2 Ti2 O7 thin film

J. C. Kim, Y. H. Jeong, J. B. Lim, K. P. Hong, Sahn Nahm, T. H. Ghong, Y. D. Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Amorphous Sm2 Ti2 O7 (SmT) films were investigated to assess their potential use in metal-insulator-metal (MIM) capacitors. A 72 nm thick SmT film showed a high capacitance density of 5.2 fFμ m2 with a low leakage current density of 0.12 nA cm2 at 2.0 V. The capacitance density increased with decreasing film thickness to 8.18 fFμ m2 for the 46 nm thick film. The 72 nm thick SmT film had small quadratic and linear voltage coefficients of capacitance of 158 ppm V2 and -283 ppmV, respectively, and a temperature coefficient of capacitance of 207 ppm°C at 100 kHz. Overall, amorphous SmT films are good candidate materials for MIM capacitors.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume154
Issue number10
DOIs
Publication statusPublished - 2007 Aug 31

Fingerprint

capacitors
Capacitors
Capacitance
capacitance
Metals
insulators
Thin films
thin films
metals
coefficients
Thick films
Leakage currents
thick films
Film thickness
leakage
film thickness
Current density
current density
Electric potential
electric potential

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

High-capacitance metal-insulator-metal capacitors using amorphous Sm2 Ti2 O7 thin film. / Kim, J. C.; Jeong, Y. H.; Lim, J. B.; Hong, K. P.; Nahm, Sahn; Ghong, T. H.; Kim, Y. D.

In: Journal of the Electrochemical Society, Vol. 154, No. 10, 31.08.2007.

Research output: Contribution to journalArticle

Kim, J. C. ; Jeong, Y. H. ; Lim, J. B. ; Hong, K. P. ; Nahm, Sahn ; Ghong, T. H. ; Kim, Y. D. / High-capacitance metal-insulator-metal capacitors using amorphous Sm2 Ti2 O7 thin film. In: Journal of the Electrochemical Society. 2007 ; Vol. 154, No. 10.
@article{3da26949034a4415a8f87fe50bccfa29,
title = "High-capacitance metal-insulator-metal capacitors using amorphous Sm2 Ti2 O7 thin film",
abstract = "Amorphous Sm2 Ti2 O7 (SmT) films were investigated to assess their potential use in metal-insulator-metal (MIM) capacitors. A 72 nm thick SmT film showed a high capacitance density of 5.2 fFμ m2 with a low leakage current density of 0.12 nA cm2 at 2.0 V. The capacitance density increased with decreasing film thickness to 8.18 fFμ m2 for the 46 nm thick film. The 72 nm thick SmT film had small quadratic and linear voltage coefficients of capacitance of 158 ppm V2 and -283 ppmV, respectively, and a temperature coefficient of capacitance of 207 ppm°C at 100 kHz. Overall, amorphous SmT films are good candidate materials for MIM capacitors.",
author = "Kim, {J. C.} and Jeong, {Y. H.} and Lim, {J. B.} and Hong, {K. P.} and Sahn Nahm and Ghong, {T. H.} and Kim, {Y. D.}",
year = "2007",
month = "8",
day = "31",
doi = "10.1149/1.2768284",
language = "English",
volume = "154",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "10",

}

TY - JOUR

T1 - High-capacitance metal-insulator-metal capacitors using amorphous Sm2 Ti2 O7 thin film

AU - Kim, J. C.

AU - Jeong, Y. H.

AU - Lim, J. B.

AU - Hong, K. P.

AU - Nahm, Sahn

AU - Ghong, T. H.

AU - Kim, Y. D.

PY - 2007/8/31

Y1 - 2007/8/31

N2 - Amorphous Sm2 Ti2 O7 (SmT) films were investigated to assess their potential use in metal-insulator-metal (MIM) capacitors. A 72 nm thick SmT film showed a high capacitance density of 5.2 fFμ m2 with a low leakage current density of 0.12 nA cm2 at 2.0 V. The capacitance density increased with decreasing film thickness to 8.18 fFμ m2 for the 46 nm thick film. The 72 nm thick SmT film had small quadratic and linear voltage coefficients of capacitance of 158 ppm V2 and -283 ppmV, respectively, and a temperature coefficient of capacitance of 207 ppm°C at 100 kHz. Overall, amorphous SmT films are good candidate materials for MIM capacitors.

AB - Amorphous Sm2 Ti2 O7 (SmT) films were investigated to assess their potential use in metal-insulator-metal (MIM) capacitors. A 72 nm thick SmT film showed a high capacitance density of 5.2 fFμ m2 with a low leakage current density of 0.12 nA cm2 at 2.0 V. The capacitance density increased with decreasing film thickness to 8.18 fFμ m2 for the 46 nm thick film. The 72 nm thick SmT film had small quadratic and linear voltage coefficients of capacitance of 158 ppm V2 and -283 ppmV, respectively, and a temperature coefficient of capacitance of 207 ppm°C at 100 kHz. Overall, amorphous SmT films are good candidate materials for MIM capacitors.

UR - http://www.scopus.com/inward/record.url?scp=34548205939&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34548205939&partnerID=8YFLogxK

U2 - 10.1149/1.2768284

DO - 10.1149/1.2768284

M3 - Article

AN - SCOPUS:34548205939

VL - 154

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 10

ER -