High characteristic temperature (To = 322 K near room temperature) of V-grooved AlGaAs-GaAs quantum wire diode lasers

T. G. Kim; M. Ogura

doi:10.1016/S0038-1101(99)00253-1

High characteristic temperature (T_o = 322 K near room temperature) of V-grooved AlGaAs-GaAs quantum wire diode lasers

T. G. Kim, M. Ogura

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

High characteristic temperature (T_o = approximately 322 K) is demonstrated near room-temperature with V-grooved. AlGaAs-GaAs multiple quantum wire (QWR) lasers grown by flow rate modulation epitaxy. The wavelength tuning rate of temperature Δλ/ΔT measured for 300 μm long uncoated lasers is approximately 0.19 nm/°C and that of injection current Δλ/ΔI is extremely small, in between 0.02 and 0.03 nm/mA in the temperature range 10 to 70 °C.

Original language	English
Pages (from-to)	185-187
Number of pages	3
Journal	Solid-State Electronics
Volume	44
Issue number	1
DOIs	https://doi.org/10.1016/S0038-1101(99)00253-1
Publication status	Published - 2000 Jan
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/S0038-1101(99)00253-1

Fingerprint Dive into the research topics of 'High characteristic temperature (T<sub>o</sub> = 322 K near room temperature) of V-grooved AlGaAs-GaAs quantum wire diode lasers'. Together they form a unique fingerprint.

Cite this

@article{bfd2f6ce3be2415c8736c430eb2768e4,

title = "High characteristic temperature (To = 322 K near room temperature) of V-grooved AlGaAs-GaAs quantum wire diode lasers",

abstract = "High characteristic temperature (To = approximately 322 K) is demonstrated near room-temperature with V-grooved. AlGaAs-GaAs multiple quantum wire (QWR) lasers grown by flow rate modulation epitaxy. The wavelength tuning rate of temperature Δλ/ΔT measured for 300 μm long uncoated lasers is approximately 0.19 nm/°C and that of injection current Δλ/ΔI is extremely small, in between 0.02 and 0.03 nm/mA in the temperature range 10 to 70 °C.",

author = "Kim, {T. G.} and M. Ogura",

year = "2000",

month = jan,

doi = "10.1016/S0038-1101(99)00253-1",

language = "English",

volume = "44",

pages = "185--187",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "1",

}

TY - JOUR

T1 - High characteristic temperature (To = 322 K near room temperature) of V-grooved AlGaAs-GaAs quantum wire diode lasers

AU - Kim, T. G.

AU - Ogura, M.

PY - 2000/1

Y1 - 2000/1

N2 - High characteristic temperature (To = approximately 322 K) is demonstrated near room-temperature with V-grooved. AlGaAs-GaAs multiple quantum wire (QWR) lasers grown by flow rate modulation epitaxy. The wavelength tuning rate of temperature Δλ/ΔT measured for 300 μm long uncoated lasers is approximately 0.19 nm/°C and that of injection current Δλ/ΔI is extremely small, in between 0.02 and 0.03 nm/mA in the temperature range 10 to 70 °C.

AB - High characteristic temperature (To = approximately 322 K) is demonstrated near room-temperature with V-grooved. AlGaAs-GaAs multiple quantum wire (QWR) lasers grown by flow rate modulation epitaxy. The wavelength tuning rate of temperature Δλ/ΔT measured for 300 μm long uncoated lasers is approximately 0.19 nm/°C and that of injection current Δλ/ΔI is extremely small, in between 0.02 and 0.03 nm/mA in the temperature range 10 to 70 °C.

UR - http://www.scopus.com/inward/record.url?scp=0033639767&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033639767&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(99)00253-1

DO - 10.1016/S0038-1101(99)00253-1

M3 - Article

AN - SCOPUS:0033639767

VL - 44

SP - 185

EP - 187

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 1

ER -