High characteristic temperature (To = 322 K near room temperature) of V-grooved AlGaAs-GaAs quantum wire diode lasers

T. G. Kim, M. Ogura

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

High characteristic temperature (To = approximately 322 K) is demonstrated near room-temperature with V-grooved. AlGaAs-GaAs multiple quantum wire (QWR) lasers grown by flow rate modulation epitaxy. The wavelength tuning rate of temperature Δλ/ΔT measured for 300 μm long uncoated lasers is approximately 0.19 nm/°C and that of injection current Δλ/ΔI is extremely small, in between 0.02 and 0.03 nm/mA in the temperature range 10 to 70 °C.

Original languageEnglish
Pages (from-to)185-187
Number of pages3
JournalSolid-State Electronics
Volume44
Issue number1
DOIs
Publication statusPublished - 2000 Jan
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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