Abstract
High characteristic temperature (To = approximately 322 K) is demonstrated near room-temperature with V-grooved. AlGaAs-GaAs multiple quantum wire (QWR) lasers grown by flow rate modulation epitaxy. The wavelength tuning rate of temperature Δλ/ΔT measured for 300 μm long uncoated lasers is approximately 0.19 nm/°C and that of injection current Δλ/ΔI is extremely small, in between 0.02 and 0.03 nm/mA in the temperature range 10 to 70 °C.
Original language | English |
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Pages (from-to) | 185-187 |
Number of pages | 3 |
Journal | Solid-State Electronics |
Volume | 44 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2000 Jan |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry