High characteristic temperature (To = 322 K near room temperature) of V-grooved AlGaAs-GaAs quantum wire diode lasers

T. G. Kim; M. Ogura

doi:10.1016/S0038-1101(99)00253-1

High characteristic temperature (T_o = 322 K near room temperature) of V-grooved AlGaAs-GaAs quantum wire diode lasers

T. G. Kim, M. Ogura

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

High characteristic temperature (T_o = approximately 322 K) is demonstrated near room-temperature with V-grooved. AlGaAs-GaAs multiple quantum wire (QWR) lasers grown by flow rate modulation epitaxy. The wavelength tuning rate of temperature Δλ/ΔT measured for 300 μm long uncoated lasers is approximately 0.19 nm/°C and that of injection current Δλ/ΔI is extremely small, in between 0.02 and 0.03 nm/mA in the temperature range 10 to 70 °C.

Original language	English
Pages (from-to)	185-187
Number of pages	3
Journal	Solid-State Electronics
Volume	44
Issue number	1
DOIs	https://doi.org/10.1016/S0038-1101(99)00253-1
Publication status	Published - 2000 Jan
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0038-1101(99)00253-1

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@article{bfd2f6ce3be2415c8736c430eb2768e4,

title = "High characteristic temperature (To = 322 K near room temperature) of V-grooved AlGaAs-GaAs quantum wire diode lasers",

abstract = "High characteristic temperature (To = approximately 322 K) is demonstrated near room-temperature with V-grooved. AlGaAs-GaAs multiple quantum wire (QWR) lasers grown by flow rate modulation epitaxy. The wavelength tuning rate of temperature Δλ/ΔT measured for 300 μm long uncoated lasers is approximately 0.19 nm/°C and that of injection current Δλ/ΔI is extremely small, in between 0.02 and 0.03 nm/mA in the temperature range 10 to 70 °C.",

author = "Kim, {T. G.} and M. Ogura",

note = "Funding Information: This work was supported by the New Energy and Industrial Technology Development Organization (NEDO) and was performed partially under the management of Femtosecond Technology Research Association (FESTA). Authors are grateful to Drs. M. Simizu, X.-L. Wang, H. Yajima and T. Sakamoto at ETL in Japan for their encouragement.",

year = "2000",

month = jan,

doi = "10.1016/S0038-1101(99)00253-1",

language = "English",

volume = "44",

pages = "185--187",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "1",

}

TY - JOUR

T1 - High characteristic temperature (To = 322 K near room temperature) of V-grooved AlGaAs-GaAs quantum wire diode lasers

AU - Kim, T. G.

AU - Ogura, M.

N1 - Funding Information: This work was supported by the New Energy and Industrial Technology Development Organization (NEDO) and was performed partially under the management of Femtosecond Technology Research Association (FESTA). Authors are grateful to Drs. M. Simizu, X.-L. Wang, H. Yajima and T. Sakamoto at ETL in Japan for their encouragement.

PY - 2000/1

Y1 - 2000/1

N2 - High characteristic temperature (To = approximately 322 K) is demonstrated near room-temperature with V-grooved. AlGaAs-GaAs multiple quantum wire (QWR) lasers grown by flow rate modulation epitaxy. The wavelength tuning rate of temperature Δλ/ΔT measured for 300 μm long uncoated lasers is approximately 0.19 nm/°C and that of injection current Δλ/ΔI is extremely small, in between 0.02 and 0.03 nm/mA in the temperature range 10 to 70 °C.

AB - High characteristic temperature (To = approximately 322 K) is demonstrated near room-temperature with V-grooved. AlGaAs-GaAs multiple quantum wire (QWR) lasers grown by flow rate modulation epitaxy. The wavelength tuning rate of temperature Δλ/ΔT measured for 300 μm long uncoated lasers is approximately 0.19 nm/°C and that of injection current Δλ/ΔI is extremely small, in between 0.02 and 0.03 nm/mA in the temperature range 10 to 70 °C.

UR - http://www.scopus.com/inward/record.url?scp=0033639767&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(99)00253-1

DO - 10.1016/S0038-1101(99)00253-1

M3 - Article

AN - SCOPUS:0033639767

VL - 44

SP - 185

EP - 187

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 1

ER -

High characteristic temperature (T_o = 322 K near room temperature) of V-grooved AlGaAs-GaAs quantum wire diode lasers

Abstract

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