High characteristic temperature (To = 322 K near room temperature) of V-grooved AlGaAs-GaAs quantum wire diode lasers

Tae Geun Kim, M. Ogura

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

High characteristic temperature (To = approximately 322 K) is demonstrated near room-temperature with V-grooved. AlGaAs-GaAs multiple quantum wire (QWR) lasers grown by flow rate modulation epitaxy. The wavelength tuning rate of temperature Δλ/ΔT measured for 300 μm long uncoated lasers is approximately 0.19 nm/°C and that of injection current Δλ/ΔI is extremely small, in between 0.02 and 0.03 nm/mA in the temperature range 10 to 70 °C.

Original languageEnglish
Pages (from-to)185-187
Number of pages3
JournalSolid-State Electronics
Volume44
Issue number1
DOIs
Publication statusPublished - 2000 Jan 1
Externally publishedYes

Fingerprint

Semiconductor quantum wires
quantum wires
aluminum gallium arsenides
Semiconductor lasers
semiconductor lasers
room temperature
Temperature
epitaxy
lasers
temperature
Lasers
flow velocity
tuning
Epitaxial growth
injection
modulation
Tuning
Flow rate
Modulation
wavelengths

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

High characteristic temperature (To = 322 K near room temperature) of V-grooved AlGaAs-GaAs quantum wire diode lasers. / Kim, Tae Geun; Ogura, M.

In: Solid-State Electronics, Vol. 44, No. 1, 01.01.2000, p. 185-187.

Research output: Contribution to journalArticle

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