Abstract
High characteristic temperature (To = approximately 322 K) is demonstrated near room-temperature with V-grooved. AlGaAs-GaAs multiple quantum wire (QWR) lasers grown by flow rate modulation epitaxy. The wavelength tuning rate of temperature Δλ/ΔT measured for 300 μm long uncoated lasers is approximately 0.19 nm/°C and that of injection current Δλ/ΔI is extremely small, in between 0.02 and 0.03 nm/mA in the temperature range 10 to 70 °C.
| Original language | English |
|---|---|
| Pages (from-to) | 185-187 |
| Number of pages | 3 |
| Journal | Solid-State Electronics |
| Volume | 44 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2000 Jan 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
High characteristic temperature (To = 322 K near room temperature) of V-grooved AlGaAs-GaAs quantum wire diode lasers. / Kim, Tae Geun; Ogura, M.
In: Solid-State Electronics, Vol. 44, No. 1, 01.01.2000, p. 185-187.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High characteristic temperature (To = 322 K near room temperature) of V-grooved AlGaAs-GaAs quantum wire diode lasers
AU - Kim, Tae Geun
AU - Ogura, M.
PY - 2000/1/1
Y1 - 2000/1/1
N2 - High characteristic temperature (To = approximately 322 K) is demonstrated near room-temperature with V-grooved. AlGaAs-GaAs multiple quantum wire (QWR) lasers grown by flow rate modulation epitaxy. The wavelength tuning rate of temperature Δλ/ΔT measured for 300 μm long uncoated lasers is approximately 0.19 nm/°C and that of injection current Δλ/ΔI is extremely small, in between 0.02 and 0.03 nm/mA in the temperature range 10 to 70 °C.
AB - High characteristic temperature (To = approximately 322 K) is demonstrated near room-temperature with V-grooved. AlGaAs-GaAs multiple quantum wire (QWR) lasers grown by flow rate modulation epitaxy. The wavelength tuning rate of temperature Δλ/ΔT measured for 300 μm long uncoated lasers is approximately 0.19 nm/°C and that of injection current Δλ/ΔI is extremely small, in between 0.02 and 0.03 nm/mA in the temperature range 10 to 70 °C.
UR - http://www.scopus.com/inward/record.url?scp=0033639767&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033639767&partnerID=8YFLogxK
U2 - 10.1016/S0038-1101(99)00253-1
DO - 10.1016/S0038-1101(99)00253-1
M3 - Article
AN - SCOPUS:0033639767
VL - 44
SP - 185
EP - 187
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 1
ER -