High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties

Da Young Yeom, Woojin Jeon, Nguyen Dien Kha Tu, So Young Yeo, Sang-Soo Lee, Bong June Sung, Hyejung Chang, Jung Ah Lim, Heesuk Kim

Research output: Contribution to journalArticle

51 Citations (Scopus)

Abstract

For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000â €‰°C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B 2 O 3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

Original languageEnglish
Article number9817
JournalScientific Reports
Volume5
DOIs
Publication statusPublished - 2015 May 5

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Boron
Graphite
Doping (additives)
Annealing
Electric properties
Oxides
Nanoelectronics
Hot Temperature
Electrocatalysts
Energy conversion
Energy storage
Electrolytes
Capacitors
Capacitance
Nitrogen
Impurities
Oxygen
Electrodes
Water

ASJC Scopus subject areas

  • General

Cite this

High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties. / Yeom, Da Young; Jeon, Woojin; Tu, Nguyen Dien Kha; Yeo, So Young; Lee, Sang-Soo; Sung, Bong June; Chang, Hyejung; Lim, Jung Ah; Kim, Heesuk.

In: Scientific Reports, Vol. 5, 9817, 05.05.2015.

Research output: Contribution to journalArticle

Yeom, Da Young ; Jeon, Woojin ; Tu, Nguyen Dien Kha ; Yeo, So Young ; Lee, Sang-Soo ; Sung, Bong June ; Chang, Hyejung ; Lim, Jung Ah ; Kim, Heesuk. / High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties. In: Scientific Reports. 2015 ; Vol. 5.
@article{b228fca2d59e4ebfb1157e09e7dc0bc3,
title = "High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties",
abstract = "For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000{\^a} €‰°C show a maximum boron concentration of 6.04 ± 1.44 at {\%}, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B 2 O 3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.",
author = "Yeom, {Da Young} and Woojin Jeon and Tu, {Nguyen Dien Kha} and Yeo, {So Young} and Sang-Soo Lee and Sung, {Bong June} and Hyejung Chang and Lim, {Jung Ah} and Heesuk Kim",
year = "2015",
month = "5",
day = "5",
doi = "10.1038/srep09817",
language = "English",
volume = "5",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",

}

TY - JOUR

T1 - High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties

AU - Yeom, Da Young

AU - Jeon, Woojin

AU - Tu, Nguyen Dien Kha

AU - Yeo, So Young

AU - Lee, Sang-Soo

AU - Sung, Bong June

AU - Chang, Hyejung

AU - Lim, Jung Ah

AU - Kim, Heesuk

PY - 2015/5/5

Y1 - 2015/5/5

N2 - For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000â €‰°C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B 2 O 3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

AB - For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000â €‰°C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B 2 O 3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

UR - http://www.scopus.com/inward/record.url?scp=84929192285&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84929192285&partnerID=8YFLogxK

U2 - 10.1038/srep09817

DO - 10.1038/srep09817

M3 - Article

VL - 5

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

M1 - 9817

ER -