High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties

Da Young Yeom, Woojin Jeon, Nguyen Dien Kha Tu, So Young Yeo, Sang-Soo Lee, Bong June Sung, Hyejung Chang, Jung Ah Lim, Heesuk Kim

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Abstract

For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000â €‰°C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B 2 O 3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

Original languageEnglish
Article number9817
JournalScientific Reports
Volume5
DOIs
Publication statusPublished - 2015 May 5

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