High density integration of low current phase-change RAM using structural modification based on 0.18 μm-CMOS technologies

G. T. Jeong, H. C. Koo, Y. N. Hwang, S. H. Lee, S. J. Ahn, S. Y. Lee, K. C. Ryoo, J. S. Hong, F. Yeung, J. H. Oh, H. J. Kim, W. C. Jeong, J. H. Park, G. H. Koh, Y. T. Kim, H. S. Jeong, Kinam Kim

Research output: Contribution to conferencePaper

Abstract

PRAM is a promising memory that can solve the problems of conventional memory. Writing current reduction is the most important technical challenges in order to maximize the advantage of PRAM in scaling. We will present the high density 64Mb PRAM based on 0.18 μm CMOS technologies. And various approaches to reduce the writing current will be reviewed.

Original languageEnglish
Pages389-392
Number of pages4
Publication statusPublished - 2004
EventProceedings - 2004 24th International Conference on Microelectronics, MIEL 2004 - Nis
Duration: 2004 May 162004 May 19

Conference

ConferenceProceedings - 2004 24th International Conference on Microelectronics, MIEL 2004
CityNis
Period04/5/1604/5/19

ASJC Scopus subject areas

  • Engineering(all)

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