High density integration of low current phase-change RAM using structural modification based on 0.18 μm-CMOS technologies

G. T. Jeong; H. C. Koo; Y. N. Hwang; S. H. Lee; S. J. Ahn; S. Y. Lee; K. C. Ryoo; J. S. Hong; F. Yeung; J. H. Oh; H. J. Kim; W. C. Jeong; J. H. Park; G. H. Koh; Y. T. Kim; H. S. Jeong; Kinam Kim

High density integration of low current phase-change RAM using structural modification based on 0.18 μm-CMOS technologies

G. T. Jeong, H. C. Koo, Y. N. Hwang, S. H. Lee, S. J. Ahn, S. Y. Lee, K. C. Ryoo, J. S. Hong, F. Yeung, J. H. Oh, H. J. Kim, W. C. Jeong, J. H. Park, G. H. Koh, Y. T. Kim, H. S. Jeong, Kinam Kim

KU-KIST Graduate School of Converging Science and Technology

Research output: Contribution to conference › Paper › peer-review

Abstract

PRAM is a promising memory that can solve the problems of conventional memory. Writing current reduction is the most important technical challenges in order to maximize the advantage of PRAM in scaling. We will present the high density 64Mb PRAM based on 0.18 μm CMOS technologies. And various approaches to reduce the writing current will be reviewed.

Original language	English
Pages	389-392
Number of pages	4
Publication status	Published - 2004
Event	Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004 - Nis Duration: 2004 May 16 → 2004 May 19

Conference

Conference	Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004
City	Nis
Period	04/5/16 → 04/5/19

ASJC Scopus subject areas

Engineering(all)

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Jeong, G. T., Koo, H. C., Hwang, Y. N., Lee, S. H., Ahn, S. J., Lee, S. Y., Ryoo, K. C., Hong, J. S., Yeung, F., Oh, J. H., Kim, H. J., Jeong, W. C., Park, J. H., Koh, G. H., Kim, Y. T., Jeong, H. S., & Kim, K. (2004). High density integration of low current phase-change RAM using structural modification based on 0.18 μm-CMOS technologies. 389-392. Paper presented at Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004, Nis.

Jeong, GT, Koo, HC, Hwang, YN, Lee, SH, Ahn, SJ, Lee, SY, Ryoo, KC, Hong, JS, Yeung, F, Oh, JH, Kim, HJ, Jeong, WC, Park, JH, Koh, GH, Kim, YT, Jeong, HS & Kim, K 2004, 'High density integration of low current phase-change RAM using structural modification based on 0.18 μm-CMOS technologies', Paper presented at Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004, Nis, 04/5/16 - 04/5/19 pp. 389-392.

@conference{630c716c7b4f4fe1ab0f0729de569821,

title = "High density integration of low current phase-change RAM using structural modification based on 0.18 μm-CMOS technologies",

abstract = "PRAM is a promising memory that can solve the problems of conventional memory. Writing current reduction is the most important technical challenges in order to maximize the advantage of PRAM in scaling. We will present the high density 64Mb PRAM based on 0.18 μm CMOS technologies. And various approaches to reduce the writing current will be reviewed.",

author = "Jeong, {G. T.} and Koo, {H. C.} and Hwang, {Y. N.} and Lee, {S. H.} and Ahn, {S. J.} and Lee, {S. Y.} and Ryoo, {K. C.} and Hong, {J. S.} and F. Yeung and Oh, {J. H.} and Kim, {H. J.} and Jeong, {W. C.} and Park, {J. H.} and Koh, {G. H.} and Kim, {Y. T.} and Jeong, {H. S.} and Kinam Kim",

note = "Copyright: Copyright 2012 Elsevier B.V., All rights reserved.; Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004 ; Conference date: 16-05-2004 Through 19-05-2004",

year = "2004",

language = "English",

pages = "389--392",

}

TY - CONF

T1 - High density integration of low current phase-change RAM using structural modification based on 0.18 μm-CMOS technologies

AU - Jeong, G. T.

AU - Koo, H. C.

AU - Hwang, Y. N.

AU - Lee, S. H.

AU - Ahn, S. J.

AU - Lee, S. Y.

AU - Ryoo, K. C.

AU - Hong, J. S.

AU - Yeung, F.

AU - Oh, J. H.

AU - Kim, H. J.

AU - Jeong, W. C.

AU - Park, J. H.

AU - Koh, G. H.

AU - Kim, Y. T.

AU - Jeong, H. S.

AU - Kim, Kinam

PY - 2004

Y1 - 2004

N2 - PRAM is a promising memory that can solve the problems of conventional memory. Writing current reduction is the most important technical challenges in order to maximize the advantage of PRAM in scaling. We will present the high density 64Mb PRAM based on 0.18 μm CMOS technologies. And various approaches to reduce the writing current will be reviewed.

AB - PRAM is a promising memory that can solve the problems of conventional memory. Writing current reduction is the most important technical challenges in order to maximize the advantage of PRAM in scaling. We will present the high density 64Mb PRAM based on 0.18 μm CMOS technologies. And various approaches to reduce the writing current will be reviewed.

UR - http://www.scopus.com/inward/record.url?scp=3142673427&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3142673427&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:3142673427

SP - 389

EP - 392

T2 - Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004

Y2 - 16 May 2004 through 19 May 2004

ER -

High density integration of low current phase-change RAM using structural modification based on 0.18 μm-CMOS technologies

Abstract

Conference

ASJC Scopus subject areas

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