High density integration of low current phase-change RAM using structural modification based on 0.18 μm-CMOS technologies

G. T. Jeong, Hyun Cheol Koo, Y. N. Hwang, S. H. Lee, S. J. Ahn, S. Y. Lee, K. C. Ryoo, J. S. Hong, F. Yeung, J. H. Oh, H. J. Kim, W. C. Jeong, J. H. Park, G. H. Koh, Y. T. Kim, H. S. Jeong, Kinam Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

PRAM is a promising memory that can solve the problems of conventional memory. Writing current reduction is the most important technical challenges in order to maximize the advantage of PRAM in scaling. We will present the high density 64Mb PRAM based on 0.18 μm CMOS technologies. And various approaches to reduce the writing current will be reviewed.

Original languageEnglish
Title of host publicationProceedings of the International Conference on Microelectronics
Pages389-392
Number of pages4
Volume24 I
Publication statusPublished - 2004 Jul 28
Externally publishedYes
EventProceedings - 2004 24th International Conference on Microelectronics, MIEL 2004 - Nis
Duration: 2004 May 162004 May 19

Other

OtherProceedings - 2004 24th International Conference on Microelectronics, MIEL 2004
CityNis
Period04/5/1604/5/19

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Jeong, G. T., Koo, H. C., Hwang, Y. N., Lee, S. H., Ahn, S. J., Lee, S. Y., Ryoo, K. C., Hong, J. S., Yeung, F., Oh, J. H., Kim, H. J., Jeong, W. C., Park, J. H., Koh, G. H., Kim, Y. T., Jeong, H. S., & Kim, K. (2004). High density integration of low current phase-change RAM using structural modification based on 0.18 μm-CMOS technologies. In Proceedings of the International Conference on Microelectronics (Vol. 24 I, pp. 389-392)