High density phase change data on flexible substrates by thermal curing type nanoimprint lithography

Sung Hoon Hong; Jun Ho Jeong; Kang In Kim; Heon Lee

doi:10.1016/j.mee.2011.01.057

High density phase change data on flexible substrates by thermal curing type nanoimprint lithography

Sung Hoon Hong, Jun Ho Jeong, Kang In Kim, Heon Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

In this study, high density phase change nano-pillar device (Tera-bit per inch² data density) was fabricated on flexible substrates by thermal curing type nanoimprint lithography with high throughput at a relatively low temperature (120°C). Phase change nano-pillar was formed with on flexible poly (ethylene terephthalate) (PET) film, polyimide (PI) film, and stainless steel plate (SUS) substrate without any damage of substrate. The electrical property of the fabricated phase change nano-pillar device was confirmed by electrical signal measuring of conductive atomic force microscopy.

Original language	English
Pages (from-to)	2013-2016
Number of pages	4
Journal	Microelectronic Engineering
Volume	88
Issue number	8
DOIs	https://doi.org/10.1016/j.mee.2011.01.057
Publication status	Published - 2011 Aug

Keywords

Flexible nano-device
Nanoimprint lithography
Phase change memory
Phase change nano-pillar device
Tera-bit record

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2011.01.057

Cite this

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title = "High density phase change data on flexible substrates by thermal curing type nanoimprint lithography",

abstract = "In this study, high density phase change nano-pillar device (Tera-bit per inch2 data density) was fabricated on flexible substrates by thermal curing type nanoimprint lithography with high throughput at a relatively low temperature (120°C). Phase change nano-pillar was formed with on flexible poly (ethylene terephthalate) (PET) film, polyimide (PI) film, and stainless steel plate (SUS) substrate without any damage of substrate. The electrical property of the fabricated phase change nano-pillar device was confirmed by electrical signal measuring of conductive atomic force microscopy.",

keywords = "Flexible nano-device, Nanoimprint lithography, Phase change memory, Phase change nano-pillar device, Tera-bit record",

author = "Hong, {Sung Hoon} and Jeong, {Jun Ho} and Kim, {Kang In} and Heon Lee",

note = "Funding Information: This work is supported by a Grant No. ( 2009K000069 ) from the Center for Nanoscale Mechatronics & Manufacturing , which is one of the 21st Century Frontier Research Programs, and the support program for the advancement of national research facilities and equipment, which are supported by the Ministry of Education, Science, and Technology, Korea. The authors thank to Dr. M.S. Hyun of National Nanofab Center for the operation of AFM (NFEC-2007-11-047855).",

year = "2011",

month = aug,

doi = "10.1016/j.mee.2011.01.057",

language = "English",

volume = "88",

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journal = "Microelectronic Engineering",

issn = "0167-9317",

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AU - Hong, Sung Hoon

AU - Jeong, Jun Ho

AU - Kim, Kang In

AU - Lee, Heon

N1 - Funding Information: This work is supported by a Grant No. ( 2009K000069 ) from the Center for Nanoscale Mechatronics & Manufacturing , which is one of the 21st Century Frontier Research Programs, and the support program for the advancement of national research facilities and equipment, which are supported by the Ministry of Education, Science, and Technology, Korea. The authors thank to Dr. M.S. Hyun of National Nanofab Center for the operation of AFM (NFEC-2007-11-047855).

PY - 2011/8

Y1 - 2011/8

N2 - In this study, high density phase change nano-pillar device (Tera-bit per inch2 data density) was fabricated on flexible substrates by thermal curing type nanoimprint lithography with high throughput at a relatively low temperature (120°C). Phase change nano-pillar was formed with on flexible poly (ethylene terephthalate) (PET) film, polyimide (PI) film, and stainless steel plate (SUS) substrate without any damage of substrate. The electrical property of the fabricated phase change nano-pillar device was confirmed by electrical signal measuring of conductive atomic force microscopy.

AB - In this study, high density phase change nano-pillar device (Tera-bit per inch2 data density) was fabricated on flexible substrates by thermal curing type nanoimprint lithography with high throughput at a relatively low temperature (120°C). Phase change nano-pillar was formed with on flexible poly (ethylene terephthalate) (PET) film, polyimide (PI) film, and stainless steel plate (SUS) substrate without any damage of substrate. The electrical property of the fabricated phase change nano-pillar device was confirmed by electrical signal measuring of conductive atomic force microscopy.

KW - Flexible nano-device

KW - Nanoimprint lithography

KW - Phase change memory

KW - Phase change nano-pillar device

KW - Tera-bit record

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U2 - 10.1016/j.mee.2011.01.057

DO - 10.1016/j.mee.2011.01.057

M3 - Article

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SN - 0167-9317

VL - 88

SP - 2013

EP - 2016

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 8

ER -

High density phase change data on flexible substrates by thermal curing type nanoimprint lithography

Abstract

Keywords

ASJC Scopus subject areas

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