High-density V-groove InGaAs/AlGaAs quantum wires on submicron gratings by constant growth technique

Noriaki Tsurumachi, Chang Sik Son, Tae Geun Kim, Mutsuo Ogura

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5 Citations (Scopus)


High-density InGaAs/AlGaAs quantum wire (QWR) structures with a period of 430 nm were successfully grown by using constant metalorganic chemical vapor deposition growth technique in which submicron gratings were preserved even after an epitaxial growth of 1 μm thickness. The quantum confinement effect of the InGaAs/AlGaAs QWRs is strong due to the large band offset and enhanced migration of surface adsorbed III-group element species compared with the GaAs/AlGaAs QWRs. The photoluminescence signal of the InGaAs/AlGaAs QWRs was observed in the temperature range from 10 to 300 K with a relatively narrow full width at half maximum of <40 meV.

Original languageEnglish
Pages (from-to)1486-1490
Number of pages5
JournalJournal of Crystal Growth
Issue number1 4 II
Publication statusPublished - 2002 Apr
Externally publishedYes



  • A1. Photoluminescence
  • A3. Metalorganic chemical vapor deposition
  • A3. Quantum wire
  • B3. Distributed feedback laser

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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