High-detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared

Woong Choi, Mi Yeon Cho, Aniruddha Konar, Jong Hak Lee, Gi Beom Cha, Soon Cheol Hong, Sangsig Kim, Jeongyong Kim, Debdeep Jena, Jinsoo Joo, Sunkook Kim

Research output: Contribution to journalArticlepeer-review

791 Citations (Scopus)


Phototransistors based on multilayer MoS2 crystals are demonstrated with a wider spectral response and higher photoresponsivity than single-layer MoS2 phototransistors. Multilayer MoS2 phototransistors further exhibit high room temperature mobilities (>70 cm2V-1s-1), near-ideal subthreshold swings (∼70 mV decade-1), low operating gate biases (<5 V), and negligible shifts in the threshold voltages during illumination.

Original languageEnglish
Pages (from-to)5832-5836
Number of pages5
JournalAdvanced Materials
Issue number43
Publication statusPublished - 2012 Nov 14


  • MoS
  • phototransistors
  • transition metal dichalcogenide

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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