High-efficiency GaN-based light-emitting diodes fabricated with metallic hybrid reflectors

Hyunsoo Kim, Sung N. Lee, Yongjo Park, Tae Yeon Seong

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We report on high-efficiency GaN-based light-emitting diodes (LEDs) fabricated with metallic hybrid reflectors (MHRs). It is shown that the MHRs consisting of an injection part (with low p-contact resistance and intermediate reflectance) and a spreading part (with high p-contact resistance and good reflectance) can enhance current injection and overall light reflectivity. Compared with reference LEDs with single reflectors, LEDs fabricated with Ag-based MHRs give higher output power by 8.9% and a reduction in forward voltage by 0.02 V (at 20 mA), resulting in the improvement of the power efficiency by ∼10%.

Original languageEnglish
Pages (from-to)582-584
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number6
DOIs
Publication statusPublished - 2008 Jun 1

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Light emitting diodes
Contact resistance
Electric potential

Keywords

  • Electrode
  • GaN
  • Light-emitting diode (LED)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

High-efficiency GaN-based light-emitting diodes fabricated with metallic hybrid reflectors. / Kim, Hyunsoo; Lee, Sung N.; Park, Yongjo; Seong, Tae Yeon.

In: IEEE Electron Device Letters, Vol. 29, No. 6, 01.06.2008, p. 582-584.

Research output: Contribution to journalArticle

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