High efficiency gan light-emitting diodes with two dimensional photonic crystal structures of deep-hole square lattices

Young Chul Shin, Dong Ho Kim, Eun Hong Kim, Joong Mok Park, Kai Ming Ho, Kristen Constant, Jong Ho Choe, Q. Han Park, Han Youl Ryu, Jong Hyeob Baek, Tak Jung, Tae Geun Kim

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

We report the enhanced light extraction of a square lattice photonic crystal GaN LED with a lattice constant of 460 nm and holes with a depth of 500 nm drilled through InGaN/GaN multiple quantum wells (MQWs) using laser holography and inductively coupled plasma reactive ion etching. In spite of the etching through the MQWs leading to undesirable surface recombination, the photonic crystal LEDs exhibited 137 times higher light extraction than that of the LEDs without photonic crystals at 20 mA. Theoretical studies using the 3-dimensional finite-difference time domain method show that the increase of the extraction efficiency with increasing etch depth is due to the increase of the density of the leaky modes into the air.

Original languageEnglish
Pages (from-to)116-120
Number of pages5
JournalIEEE Journal of Quantum Electronics
Volume46
Issue number1
DOIs
Publication statusPublished - 2010

Keywords

  • Index terms-finite-difference time domain method
  • Light extraction efficiency
  • Light-emitting diode
  • Nitride-based semiconductor
  • Photonic crystal

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Shin, Y. C., Kim, D. H., Kim, E. H., Park, J. M., Ho, K. M., Constant, K., Choe, J. H., Han Park, Q., Ryu, H. Y., Baek, J. H., Jung, T., & Kim, T. G. (2010). High efficiency gan light-emitting diodes with two dimensional photonic crystal structures of deep-hole square lattices. IEEE Journal of Quantum Electronics, 46(1), 116-120. https://doi.org/10.1109/JQE.2009.2030150