High-efficiency p-i-n photodetectors on selective-area-grown ge for monolithic integration

Hyun-Yong Yu; Shen Ren; Woo Shik Jung; Ali K. Okyay; D. A B Miller; Krishna C. Saraswat

doi:10.1109/LED.2009.2030905

High-efficiency p-i-n photodetectors on selective-area-grown ge for monolithic integration

Hyun-Yong Yu, Shen Ren, Woo Shik Jung, Ali K. Okyay, D. A B Miller, Krishna C. Saraswat

Research output: Contribution to journal › Article

40 Citations (Scopus)

Abstract

We demonstrate normal incidence p-i-n photodiodes on selective-area-grown Ge using multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An enhanced efficiency in the near-infrared regime and the absorption edge shifting to longer wavelength is achieved due to 0.14% residual tensile strain in the selective-area-grown Ge. The responsivities at 1.48, 1.525, and 1.55 μ are 0.8, 0.7, and 0.64 A/W, respectively, without an optimal antireflection coating. These results are promising toward monolithically integrated on-chip optical links and in telecommunications.

Original language	English
Pages (from-to)	1161-1163
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	11
DOIs	https://doi.org/10.1109/LED.2009.2030905
Publication status	Published - 2009 Oct 9
Externally published	Yes

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Keywords

Germanium
Photodiode
Selective
Strain
Tensile

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Cite this

Yu, H-Y., Ren, S., Jung, W. S., Okyay, A. K., Miller, D. A. B., & Saraswat, K. C. (2009). High-efficiency p-i-n photodetectors on selective-area-grown ge for monolithic integration. IEEE Electron Device Letters, 30(11), 1161-1163. https://doi.org/10.1109/LED.2009.2030905

@article{e44da44711b44b25a59eea1369becd5f,

title = "High-efficiency p-i-n photodetectors on selective-area-grown ge for monolithic integration",

abstract = "We demonstrate normal incidence p-i-n photodiodes on selective-area-grown Ge using multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An enhanced efficiency in the near-infrared regime and the absorption edge shifting to longer wavelength is achieved due to 0.14% residual tensile strain in the selective-area-grown Ge. The responsivities at 1.48, 1.525, and 1.55 μ are 0.8, 0.7, and 0.64 A/W, respectively, without an optimal antireflection coating. These results are promising toward monolithically integrated on-chip optical links and in telecommunications.",

keywords = "Germanium, Photodiode, Selective, Strain, Tensile",

author = "Hyun-Yong Yu and Shen Ren and Jung, {Woo Shik} and Okyay, {Ali K.} and Miller, {D. A B} and Saraswat, {Krishna C.}",

year = "2009",

month = oct

day = "9",

doi = "10.1109/LED.2009.2030905",

language = "English",

volume = "30",

pages = "1161--1163",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - High-efficiency p-i-n photodetectors on selective-area-grown ge for monolithic integration

AU - Yu, Hyun-Yong

AU - Ren, Shen

AU - Jung, Woo Shik

AU - Okyay, Ali K.

AU - Miller, D. A B

AU - Saraswat, Krishna C.

PY - 2009/10/9

Y1 - 2009/10/9

N2 - We demonstrate normal incidence p-i-n photodiodes on selective-area-grown Ge using multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An enhanced efficiency in the near-infrared regime and the absorption edge shifting to longer wavelength is achieved due to 0.14% residual tensile strain in the selective-area-grown Ge. The responsivities at 1.48, 1.525, and 1.55 μ are 0.8, 0.7, and 0.64 A/W, respectively, without an optimal antireflection coating. These results are promising toward monolithically integrated on-chip optical links and in telecommunications.

AB - We demonstrate normal incidence p-i-n photodiodes on selective-area-grown Ge using multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An enhanced efficiency in the near-infrared regime and the absorption edge shifting to longer wavelength is achieved due to 0.14% residual tensile strain in the selective-area-grown Ge. The responsivities at 1.48, 1.525, and 1.55 μ are 0.8, 0.7, and 0.64 A/W, respectively, without an optimal antireflection coating. These results are promising toward monolithically integrated on-chip optical links and in telecommunications.

KW - Germanium

KW - Photodiode

KW - Selective

KW - Strain

KW - Tensile

UR - http://www.scopus.com/inward/record.url?scp=70350618469&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70350618469&partnerID=8YFLogxK

U2 - 10.1109/LED.2009.2030905

DO - 10.1109/LED.2009.2030905

M3 - Article

AN - SCOPUS:70350618469

VL - 30

SP - 1161

EP - 1163

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 11

ER -

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10.1109/LED.2009.2030905