Abstract
We demonstrate normal incidence p-i-n photodiodes on selective-area-grown Ge using multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An enhanced efficiency in the near-infrared regime and the absorption edge shifting to longer wavelength is achieved due to 0.14% residual tensile strain in the selective-area-grown Ge. The responsivities at 1.48, 1.525, and 1.55 μ are 0.8, 0.7, and 0.64 A/W, respectively, without an optimal antireflection coating. These results are promising toward monolithically integrated on-chip optical links and in telecommunications.
| Original language | English |
|---|---|
| Pages (from-to) | 1161-1163 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 30 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2009 |
| Externally published | Yes |
Keywords
- Germanium
- Photodiode
- Selective
- Strain
- Tensile
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Yu, H. Y., Ren, S., Jung, W. S., Okyay, A. K., Miller, D. A. B., & Saraswat, K. C. (2009). High-efficiency p-i-n photodetectors on selective-area-grown ge for monolithic integration. IEEE Electron Device Letters, 30(11), 1161-1163. https://doi.org/10.1109/LED.2009.2030905