@article{e44da44711b44b25a59eea1369becd5f,
title = "High-efficiency p-i-n photodetectors on selective-area-grown ge for monolithic integration",
abstract = "We demonstrate normal incidence p-i-n photodiodes on selective-area-grown Ge using multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An enhanced efficiency in the near-infrared regime and the absorption edge shifting to longer wavelength is achieved due to 0.14% residual tensile strain in the selective-area-grown Ge. The responsivities at 1.48, 1.525, and 1.55 μ are 0.8, 0.7, and 0.64 A/W, respectively, without an optimal antireflection coating. These results are promising toward monolithically integrated on-chip optical links and in telecommunications.",
keywords = "Germanium, Photodiode, Selective, Strain, Tensile",
author = "Yu, {Hyun Yong} and Shen Ren and Jung, {Woo Shik} and Okyay, {Ali K.} and Miller, {David A.B.} and Saraswat, {Krishna C.}",
note = "Funding Information: Manuscript received August 9, 2009. First published October 2, 2009; current version published October 23, 2009. This work was supported in part by FCRP Interconnect Focus Center. The review of this letter was arranged by Editor P. K.-L. Yu. H.-Y. Yu, S. Ren, W. S. Jung, D. A. B. Miller, and K. C. Saraswat are with the Department of Electrical Engineering, Stanford University, Stanford, CA 94305 USA (e-mail: yuhykr@stanford.edu). A. K. Okyay is with the Department of Electrical Engineering, Bilkent University, Ankara TR-06800, Turkey. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2009.2030905 Fig. 1. (a) Schematic diagram of the cross section of normal incidence Ge/Si p-i-n photodiode. (b) Scanning electron micrograph of the circular mesas of the photodiodes. The circular p-i-n device has the ring-shaped contact with a ring width of 50 μm. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.",
year = "2009",
doi = "10.1109/LED.2009.2030905",
language = "English",
volume = "30",
pages = "1161--1163",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",
}