High-efficiency p-i-n photodetectors on selective-area-grown ge for monolithic integration

Hyun Yong Yu, Shen Ren, Woo Shik Jung, Ali K. Okyay, David A.B. Miller, Krishna C. Saraswat

Research output: Contribution to journalArticlepeer-review

53 Citations (Scopus)


We demonstrate normal incidence p-i-n photodiodes on selective-area-grown Ge using multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An enhanced efficiency in the near-infrared regime and the absorption edge shifting to longer wavelength is achieved due to 0.14% residual tensile strain in the selective-area-grown Ge. The responsivities at 1.48, 1.525, and 1.55 μ are 0.8, 0.7, and 0.64 A/W, respectively, without an optimal antireflection coating. These results are promising toward monolithically integrated on-chip optical links and in telecommunications.

Original languageEnglish
Pages (from-to)1161-1163
Number of pages3
JournalIEEE Electron Device Letters
Issue number11
Publication statusPublished - 2009
Externally publishedYes


  • Germanium
  • Photodiode
  • Selective
  • Strain
  • Tensile

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


Dive into the research topics of 'High-efficiency p-i-n photodetectors on selective-area-grown ge for monolithic integration'. Together they form a unique fingerprint.

Cite this