Abstract
We demonstrate normal incidence p-i-n photodiodes on selective-area-grown Ge using multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An enhanced efficiency in the near-infrared regime and the absorption edge shifting to longer wavelength is achieved due to 0.14% residual tensile strain in the selective-area-grown Ge. The responsivities at 1.48, 1.525, and 1.55 μ are 0.8, 0.7, and 0.64 A/W, respectively, without an optimal antireflection coating. These results are promising toward monolithically integrated on-chip optical links and in telecommunications.
| Original language | English |
|---|---|
| Pages (from-to) | 1161-1163 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 30 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2009 Oct 9 |
| Externally published | Yes |
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Keywords
- Germanium
- Photodiode
- Selective
- Strain
- Tensile
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
High-efficiency p-i-n photodetectors on selective-area-grown ge for monolithic integration. / Yu, Hyun-Yong; Ren, Shen; Jung, Woo Shik; Okyay, Ali K.; Miller, D. A B; Saraswat, Krishna C.
In: IEEE Electron Device Letters, Vol. 30, No. 11, 09.10.2009, p. 1161-1163.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High-efficiency p-i-n photodetectors on selective-area-grown ge for monolithic integration
AU - Yu, Hyun-Yong
AU - Ren, Shen
AU - Jung, Woo Shik
AU - Okyay, Ali K.
AU - Miller, D. A B
AU - Saraswat, Krishna C.
PY - 2009/10/9
Y1 - 2009/10/9
N2 - We demonstrate normal incidence p-i-n photodiodes on selective-area-grown Ge using multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An enhanced efficiency in the near-infrared regime and the absorption edge shifting to longer wavelength is achieved due to 0.14% residual tensile strain in the selective-area-grown Ge. The responsivities at 1.48, 1.525, and 1.55 μ are 0.8, 0.7, and 0.64 A/W, respectively, without an optimal antireflection coating. These results are promising toward monolithically integrated on-chip optical links and in telecommunications.
AB - We demonstrate normal incidence p-i-n photodiodes on selective-area-grown Ge using multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An enhanced efficiency in the near-infrared regime and the absorption edge shifting to longer wavelength is achieved due to 0.14% residual tensile strain in the selective-area-grown Ge. The responsivities at 1.48, 1.525, and 1.55 μ are 0.8, 0.7, and 0.64 A/W, respectively, without an optimal antireflection coating. These results are promising toward monolithically integrated on-chip optical links and in telecommunications.
KW - Germanium
KW - Photodiode
KW - Selective
KW - Strain
KW - Tensile
UR - http://www.scopus.com/inward/record.url?scp=70350618469&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=70350618469&partnerID=8YFLogxK
U2 - 10.1109/LED.2009.2030905
DO - 10.1109/LED.2009.2030905
M3 - Article
AN - SCOPUS:70350618469
VL - 30
SP - 1161
EP - 1163
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 11
ER -