High-efficiency p-i-n photodetectors on selective-area-grown ge for monolithic integration

Hyun-Yong Yu, Shen Ren, Woo Shik Jung, Ali K. Okyay, D. A B Miller, Krishna C. Saraswat

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40 Citations (Scopus)

Abstract

We demonstrate normal incidence p-i-n photodiodes on selective-area-grown Ge using multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An enhanced efficiency in the near-infrared regime and the absorption edge shifting to longer wavelength is achieved due to 0.14% residual tensile strain in the selective-area-grown Ge. The responsivities at 1.48, 1.525, and 1.55 μ are 0.8, 0.7, and 0.64 A/W, respectively, without an optimal antireflection coating. These results are promising toward monolithically integrated on-chip optical links and in telecommunications.

Original languageEnglish
Pages (from-to)1161-1163
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number11
DOIs
Publication statusPublished - 2009 Oct 9
Externally publishedYes

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Keywords

  • Germanium
  • Photodiode
  • Selective
  • Strain
  • Tensile

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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