High-efficiency p-i-n photodetectors on selective-area-grown ge for monolithic integration

Hyun-Yong Yu, Shen Ren, Woo Shik Jung, Ali K. Okyay, D. A B Miller, Krishna C. Saraswat

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

We demonstrate normal incidence p-i-n photodiodes on selective-area-grown Ge using multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An enhanced efficiency in the near-infrared regime and the absorption edge shifting to longer wavelength is achieved due to 0.14% residual tensile strain in the selective-area-grown Ge. The responsivities at 1.48, 1.525, and 1.55 μ are 0.8, 0.7, and 0.64 A/W, respectively, without an optimal antireflection coating. These results are promising toward monolithically integrated on-chip optical links and in telecommunications.

Original languageEnglish
Pages (from-to)1161-1163
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number11
DOIs
Publication statusPublished - 2009 Oct 9
Externally publishedYes

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Antireflection coatings
Optical links
Tensile strain
Photodetectors
Photodiodes
Epitaxial growth
Telecommunication
Hydrogen
Annealing
Infrared radiation
Wavelength

Keywords

  • Germanium
  • Photodiode
  • Selective
  • Strain
  • Tensile

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

High-efficiency p-i-n photodetectors on selective-area-grown ge for monolithic integration. / Yu, Hyun-Yong; Ren, Shen; Jung, Woo Shik; Okyay, Ali K.; Miller, D. A B; Saraswat, Krishna C.

In: IEEE Electron Device Letters, Vol. 30, No. 11, 09.10.2009, p. 1161-1163.

Research output: Contribution to journalArticle

Yu, Hyun-Yong ; Ren, Shen ; Jung, Woo Shik ; Okyay, Ali K. ; Miller, D. A B ; Saraswat, Krishna C. / High-efficiency p-i-n photodetectors on selective-area-grown ge for monolithic integration. In: IEEE Electron Device Letters. 2009 ; Vol. 30, No. 11. pp. 1161-1163.
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