High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters

Sun Kyung Kim, Jin Wook Lee, Ho Seok Ee, Yong Tae Moon, Soon Hong Kwon, Hoki Kwon, Hong Kyu Park

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

We demonstrate a highly-efficient, large-area (1×1 mm2) GaN slab light-emitting diode using a vertically directional emitter produced from constructive interference. The vertical radiation can be coupled effectively into leaky modes from the beginning and thus a high-extraction efficiency can be expected with reduced material absorption. The far-field measurements show that the desired vertical emission profiles are obtained by varying the thickness of the dielectric layer between the emitter and bottom silver mirror. With the combination of a light extractor of a randomly textured surface, the output power was increased ∼1.4 fold compared to a non-patterned device at a standard current of 350 mA without electrical degradation.

Original languageEnglish
Pages (from-to)11025-11032
Number of pages8
JournalOptics Express
Volume18
Issue number11
DOIs
Publication statusPublished - 2010 May 24

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emitters
slabs
light emitting diodes
material absorption
far fields
silver
mirrors
degradation
interference
output
radiation
profiles

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters. / Kim, Sun Kyung; Lee, Jin Wook; Ee, Ho Seok; Moon, Yong Tae; Kwon, Soon Hong; Kwon, Hoki; Park, Hong Kyu.

In: Optics Express, Vol. 18, No. 11, 24.05.2010, p. 11025-11032.

Research output: Contribution to journalArticle

Kim, Sun Kyung ; Lee, Jin Wook ; Ee, Ho Seok ; Moon, Yong Tae ; Kwon, Soon Hong ; Kwon, Hoki ; Park, Hong Kyu. / High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters. In: Optics Express. 2010 ; Vol. 18, No. 11. pp. 11025-11032.
@article{a346e9b5100b48fcab66952f82c123d1,
title = "High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters",
abstract = "We demonstrate a highly-efficient, large-area (1×1 mm2) GaN slab light-emitting diode using a vertically directional emitter produced from constructive interference. The vertical radiation can be coupled effectively into leaky modes from the beginning and thus a high-extraction efficiency can be expected with reduced material absorption. The far-field measurements show that the desired vertical emission profiles are obtained by varying the thickness of the dielectric layer between the emitter and bottom silver mirror. With the combination of a light extractor of a randomly textured surface, the output power was increased ∼1.4 fold compared to a non-patterned device at a standard current of 350 mA without electrical degradation.",
author = "Kim, {Sun Kyung} and Lee, {Jin Wook} and Ee, {Ho Seok} and Moon, {Yong Tae} and Kwon, {Soon Hong} and Hoki Kwon and Park, {Hong Kyu}",
year = "2010",
month = "5",
day = "24",
doi = "10.1364/OE.18.011025",
language = "English",
volume = "18",
pages = "11025--11032",
journal = "Optics Express",
issn = "1094-4087",
publisher = "The Optical Society",
number = "11",

}

TY - JOUR

T1 - High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters

AU - Kim, Sun Kyung

AU - Lee, Jin Wook

AU - Ee, Ho Seok

AU - Moon, Yong Tae

AU - Kwon, Soon Hong

AU - Kwon, Hoki

AU - Park, Hong Kyu

PY - 2010/5/24

Y1 - 2010/5/24

N2 - We demonstrate a highly-efficient, large-area (1×1 mm2) GaN slab light-emitting diode using a vertically directional emitter produced from constructive interference. The vertical radiation can be coupled effectively into leaky modes from the beginning and thus a high-extraction efficiency can be expected with reduced material absorption. The far-field measurements show that the desired vertical emission profiles are obtained by varying the thickness of the dielectric layer between the emitter and bottom silver mirror. With the combination of a light extractor of a randomly textured surface, the output power was increased ∼1.4 fold compared to a non-patterned device at a standard current of 350 mA without electrical degradation.

AB - We demonstrate a highly-efficient, large-area (1×1 mm2) GaN slab light-emitting diode using a vertically directional emitter produced from constructive interference. The vertical radiation can be coupled effectively into leaky modes from the beginning and thus a high-extraction efficiency can be expected with reduced material absorption. The far-field measurements show that the desired vertical emission profiles are obtained by varying the thickness of the dielectric layer between the emitter and bottom silver mirror. With the combination of a light extractor of a randomly textured surface, the output power was increased ∼1.4 fold compared to a non-patterned device at a standard current of 350 mA without electrical degradation.

UR - http://www.scopus.com/inward/record.url?scp=77952830602&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77952830602&partnerID=8YFLogxK

U2 - 10.1364/OE.18.011025

DO - 10.1364/OE.18.011025

M3 - Article

C2 - 20588958

AN - SCOPUS:77952830602

VL - 18

SP - 11025

EP - 11032

JO - Optics Express

JF - Optics Express

SN - 1094-4087

IS - 11

ER -