We demonstrate a highly-efficient, large-area (1×1 mm2) GaN slab light-emitting diode using a vertically directional emitter produced from constructive interference. The vertical radiation can be coupled effectively into leaky modes from the beginning and thus a high-extraction efficiency can be expected with reduced material absorption. The far-field measurements show that the desired vertical emission profiles are obtained by varying the thickness of the dielectric layer between the emitter and bottom silver mirror. With the combination of a light extractor of a randomly textured surface, the output power was increased ∼1.4 fold compared to a non-patterned device at a standard current of 350 mA without electrical degradation.
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics