High electron concentration and mobility in Al-doped n -Z nO epilayer achieved via dopant activation using rapid-thermal annealing

Kyoung Kook Kim, Shigeru Niki, Jin Yong Oh, June O. Song, Tae Yeon Seong, Seong Ju Park, Shizuo Fujita, Sang Woo Kim

Research output: Contribution to journalArticle

110 Citations (Scopus)

Abstract

We report on the growth of very high-quality Al-doped n -type ZnO epilayers on sapphire substrates using a radio-frequency (rf) magnetron sputtering technique combined with a rapid-thermal annealing. Photoluminescence (PL) and Hall measurements show that both the optical and electrical properties of the ZnO layers are significantly improved with an increasing annealing temperature up to 900 °C. For example, the samples that are grown at 600 °C and a rf power of 100 W with an Ar O2 gas ratio of 1 give an electron concentration of 1.83× 1020 cm3 and a mobility of 65.6 cm2 V s, when annealed at 900 °C for 3 min in a nitrogen ambient. Furthermore, x-ray diffraction measurements show that both the as-grown and annealed samples are of excellent crystallinity.

Original languageEnglish
Article number066103
JournalJournal of Applied Physics
Volume97
Issue number6
DOIs
Publication statusPublished - 2005 Jun 27
Externally publishedYes

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radio frequencies
activation
annealing
crystallinity
magnetron sputtering
sapphire
x ray diffraction
electrons
electrical properties
photoluminescence
optical properties
nitrogen
gases
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

High electron concentration and mobility in Al-doped n -Z nO epilayer achieved via dopant activation using rapid-thermal annealing. / Kim, Kyoung Kook; Niki, Shigeru; Oh, Jin Yong; Song, June O.; Seong, Tae Yeon; Park, Seong Ju; Fujita, Shizuo; Kim, Sang Woo.

In: Journal of Applied Physics, Vol. 97, No. 6, 066103, 27.06.2005.

Research output: Contribution to journalArticle

Kim, Kyoung Kook ; Niki, Shigeru ; Oh, Jin Yong ; Song, June O. ; Seong, Tae Yeon ; Park, Seong Ju ; Fujita, Shizuo ; Kim, Sang Woo. / High electron concentration and mobility in Al-doped n -Z nO epilayer achieved via dopant activation using rapid-thermal annealing. In: Journal of Applied Physics. 2005 ; Vol. 97, No. 6.
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AU - Oh, Jin Yong

AU - Song, June O.

AU - Seong, Tae Yeon

AU - Park, Seong Ju

AU - Fujita, Shizuo

AU - Kim, Sang Woo

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