High electron mobility of β-HgS colloidal quantum dots with doubly occupied quantum states

Jaekyun Kim, Bitna Yoon, Jaehyun Kim, Yunchang Choi, Young Wan Kwon, Sung Kyu Park, Kwang Seob Jeong

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Electron occupation of the lowest electronic state of the conduction band (1S e ) of a semiconducting nanocrystal offers numerous opportunities to efficiently utilize the quantization of the colloidal quantum dot. The steady-state electron occupation of the 1S e gives rise to unprecedented electrical, optical, and magnetic properties. We report an electron mobility of ∼1.29 cm 2 V -1 s -1 measured in a mercury sulfide (β-HgS) quantum dot field effect transistor (FET), demonstrating the best carrier mobility for the HgS colloidal nanocrystal solid. The high electron mobility of the HgS nanocrystals with the doubly occupied quantum state originates from the efficient ligand exchange from oleylamine to thiocyanate, better carrier hopping via shortened inter-dot-distance, and the packing of nanocrystals by optimized thermal annealing conditions.

Original languageEnglish
Pages (from-to)38166-38170
Number of pages5
JournalRSC Advances
Volume7
Issue number61
DOIs
Publication statusPublished - 2017 Jan 1

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Electron mobility
Nanocrystals
Semiconductor quantum dots
Carrier mobility
Electronic states
Sulfides
Field effect transistors
Conduction bands
Mercury
Electron energy levels
Magnetic properties
Electric properties
Optical properties
Ligands
Annealing
Electrons

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)

Cite this

High electron mobility of β-HgS colloidal quantum dots with doubly occupied quantum states. / Kim, Jaekyun; Yoon, Bitna; Kim, Jaehyun; Choi, Yunchang; Kwon, Young Wan; Park, Sung Kyu; Jeong, Kwang Seob.

In: RSC Advances, Vol. 7, No. 61, 01.01.2017, p. 38166-38170.

Research output: Contribution to journalArticle

Kim, Jaekyun ; Yoon, Bitna ; Kim, Jaehyun ; Choi, Yunchang ; Kwon, Young Wan ; Park, Sung Kyu ; Jeong, Kwang Seob. / High electron mobility of β-HgS colloidal quantum dots with doubly occupied quantum states. In: RSC Advances. 2017 ; Vol. 7, No. 61. pp. 38166-38170.
@article{6b4574ede0d841e4ac95fc8ddb9300f2,
title = "High electron mobility of β-HgS colloidal quantum dots with doubly occupied quantum states",
abstract = "Electron occupation of the lowest electronic state of the conduction band (1S e ) of a semiconducting nanocrystal offers numerous opportunities to efficiently utilize the quantization of the colloidal quantum dot. The steady-state electron occupation of the 1S e gives rise to unprecedented electrical, optical, and magnetic properties. We report an electron mobility of ∼1.29 cm 2 V -1 s -1 measured in a mercury sulfide (β-HgS) quantum dot field effect transistor (FET), demonstrating the best carrier mobility for the HgS colloidal nanocrystal solid. The high electron mobility of the HgS nanocrystals with the doubly occupied quantum state originates from the efficient ligand exchange from oleylamine to thiocyanate, better carrier hopping via shortened inter-dot-distance, and the packing of nanocrystals by optimized thermal annealing conditions.",
author = "Jaekyun Kim and Bitna Yoon and Jaehyun Kim and Yunchang Choi and Kwon, {Young Wan} and Park, {Sung Kyu} and Jeong, {Kwang Seob}",
year = "2017",
month = "1",
day = "1",
doi = "10.1039/c7ra07193k",
language = "English",
volume = "7",
pages = "38166--38170",
journal = "RSC Advances",
issn = "2046-2069",
publisher = "Royal Society of Chemistry",
number = "61",

}

TY - JOUR

T1 - High electron mobility of β-HgS colloidal quantum dots with doubly occupied quantum states

AU - Kim, Jaekyun

AU - Yoon, Bitna

AU - Kim, Jaehyun

AU - Choi, Yunchang

AU - Kwon, Young Wan

AU - Park, Sung Kyu

AU - Jeong, Kwang Seob

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Electron occupation of the lowest electronic state of the conduction band (1S e ) of a semiconducting nanocrystal offers numerous opportunities to efficiently utilize the quantization of the colloidal quantum dot. The steady-state electron occupation of the 1S e gives rise to unprecedented electrical, optical, and magnetic properties. We report an electron mobility of ∼1.29 cm 2 V -1 s -1 measured in a mercury sulfide (β-HgS) quantum dot field effect transistor (FET), demonstrating the best carrier mobility for the HgS colloidal nanocrystal solid. The high electron mobility of the HgS nanocrystals with the doubly occupied quantum state originates from the efficient ligand exchange from oleylamine to thiocyanate, better carrier hopping via shortened inter-dot-distance, and the packing of nanocrystals by optimized thermal annealing conditions.

AB - Electron occupation of the lowest electronic state of the conduction band (1S e ) of a semiconducting nanocrystal offers numerous opportunities to efficiently utilize the quantization of the colloidal quantum dot. The steady-state electron occupation of the 1S e gives rise to unprecedented electrical, optical, and magnetic properties. We report an electron mobility of ∼1.29 cm 2 V -1 s -1 measured in a mercury sulfide (β-HgS) quantum dot field effect transistor (FET), demonstrating the best carrier mobility for the HgS colloidal nanocrystal solid. The high electron mobility of the HgS nanocrystals with the doubly occupied quantum state originates from the efficient ligand exchange from oleylamine to thiocyanate, better carrier hopping via shortened inter-dot-distance, and the packing of nanocrystals by optimized thermal annealing conditions.

UR - http://www.scopus.com/inward/record.url?scp=85027237121&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85027237121&partnerID=8YFLogxK

U2 - 10.1039/c7ra07193k

DO - 10.1039/c7ra07193k

M3 - Article

AN - SCOPUS:85027237121

VL - 7

SP - 38166

EP - 38170

JO - RSC Advances

JF - RSC Advances

SN - 2046-2069

IS - 61

ER -