High emission performance from point emitters made by carbon nanotube films

Dong Hoon Shin, Ji Hong Shin, Cheol Jin Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present field emission properties of CNT point emitters fabricated by a unique method. The CNT point emitters exhibited high emission current up to 2.3 mA at the electric field of 1. 6 V/μm and excellent emission stability during 24 h. Moreover, emission pattern showed a very low spreading angle of emitted electrons at the anode electrode. The high emission performance was attributed to the well-focused local electric field and high density of emission sites.

Original languageEnglish
Title of host publicationProceedings - IVNC 2011
Subtitle of host publication2011 24th International Vacuum Nanoelectronics Conference
Pages177-178
Number of pages2
Publication statusPublished - 2011
Event2011 24th International Vacuum Nanoelectronics Conference, IVNC 2011 - Wuppertal, Germany
Duration: 2011 Jul 182011 Jul 22

Publication series

NameProceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference

Other

Other2011 24th International Vacuum Nanoelectronics Conference, IVNC 2011
CountryGermany
CityWuppertal
Period11/7/1811/7/22

Keywords

  • Carbon nanotube
  • Field emitter
  • Point

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Shin, D. H., Shin, J. H., & Lee, C. J. (2011). High emission performance from point emitters made by carbon nanotube films. In Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference (pp. 177-178). [6004620] (Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference).