High energy-density 0.72Pb(Zr0.47Ti0.53)O3-0.28Pb[(Zn0.45Ni0.55)1/3Nb2/3]O3 thick films fabricated by tape casting for energy-harvesting-device applications

Chang Jun Jeon, Ha Na Hwang, Young Hun Jeong, Ji Sun Yun, Joong Hee Nam, Jeong Ho Cho, Jong Hoo Paik, Jong Bong Lim, Sahn Nahm, Eung Soo Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

0.72Pb(Zr0.47Ti0.53)O3-0.28Pb[(Zn0.45Ni0.55)1/3Nb2/3]O3 (0.72PZT-0.28PZNN) thick films were prepared by using a tape casting method to develop new materials with high energy-density applicable to energy-harvesting devices. The piezoelectric strain constant (d 33), dielectric constant (e{open} 33 T /e{open} 0), piezoelectric voltage constant (g 33) and transduction coefficient (d 33·g 33) of the films were affected by the sintering temperature. These results could be attributed to the crystal structure, microstructures and secondary phases. However, the dielectric loss (tanδ) of the films was not changed remarkably with increasing sintering temperature. Typically, a d 33 of 452 pC/N, e{open} 33 T /e{open} 0 of 1444, d 33·g 33 of 20,340 × 10-15 m2/N and tanδ of 0.15% were obtained for the films sintered at 1050 °C for 1 h. The power generation performance of the piezoelectric unimorph cantilever was assessed to demonstrate the feasibility of the 0.72PZT-0.28PZNN piezoelectric thick film. Also, theoretical models were employed to predict the resonance frequency of the unimorph cantilever generator, and the predicted values were compared with experimental data.

Original languageEnglish
Pages (from-to)1772-1776
Number of pages5
JournalJournal of the Korean Physical Society
Volume63
Issue number9
DOIs
Publication statusPublished - 2013 Nov 1

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tapes
thick films
flux density
sintering
dielectric loss
energy
generators
permittivity
microstructure
crystal structure
temperature
electric potential
coefficients

Keywords

  • 0.72PZT-0.28PZNN
  • Energy density
  • Sintering
  • Tape casting
  • Thick film

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

High energy-density 0.72Pb(Zr0.47Ti0.53)O3-0.28Pb[(Zn0.45Ni0.55)1/3Nb2/3]O3 thick films fabricated by tape casting for energy-harvesting-device applications. / Jeon, Chang Jun; Hwang, Ha Na; Jeong, Young Hun; Yun, Ji Sun; Nam, Joong Hee; Cho, Jeong Ho; Paik, Jong Hoo; Lim, Jong Bong; Nahm, Sahn; Kim, Eung Soo.

In: Journal of the Korean Physical Society, Vol. 63, No. 9, 01.11.2013, p. 1772-1776.

Research output: Contribution to journalArticle

Jeon, Chang Jun ; Hwang, Ha Na ; Jeong, Young Hun ; Yun, Ji Sun ; Nam, Joong Hee ; Cho, Jeong Ho ; Paik, Jong Hoo ; Lim, Jong Bong ; Nahm, Sahn ; Kim, Eung Soo. / High energy-density 0.72Pb(Zr0.47Ti0.53)O3-0.28Pb[(Zn0.45Ni0.55)1/3Nb2/3]O3 thick films fabricated by tape casting for energy-harvesting-device applications. In: Journal of the Korean Physical Society. 2013 ; Vol. 63, No. 9. pp. 1772-1776.
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title = "High energy-density 0.72Pb(Zr0.47Ti0.53)O3-0.28Pb[(Zn0.45Ni0.55)1/3Nb2/3]O3 thick films fabricated by tape casting for energy-harvesting-device applications",
abstract = "0.72Pb(Zr0.47Ti0.53)O3-0.28Pb[(Zn0.45Ni0.55)1/3Nb2/3]O3 (0.72PZT-0.28PZNN) thick films were prepared by using a tape casting method to develop new materials with high energy-density applicable to energy-harvesting devices. The piezoelectric strain constant (d 33), dielectric constant (e{open} 33 T /e{open} 0), piezoelectric voltage constant (g 33) and transduction coefficient (d 33·g 33) of the films were affected by the sintering temperature. These results could be attributed to the crystal structure, microstructures and secondary phases. However, the dielectric loss (tanδ) of the films was not changed remarkably with increasing sintering temperature. Typically, a d 33 of 452 pC/N, e{open} 33 T /e{open} 0 of 1444, d 33·g 33 of 20,340 × 10-15 m2/N and tanδ of 0.15{\%} were obtained for the films sintered at 1050 °C for 1 h. The power generation performance of the piezoelectric unimorph cantilever was assessed to demonstrate the feasibility of the 0.72PZT-0.28PZNN piezoelectric thick film. Also, theoretical models were employed to predict the resonance frequency of the unimorph cantilever generator, and the predicted values were compared with experimental data.",
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T1 - High energy-density 0.72Pb(Zr0.47Ti0.53)O3-0.28Pb[(Zn0.45Ni0.55)1/3Nb2/3]O3 thick films fabricated by tape casting for energy-harvesting-device applications

AU - Jeon, Chang Jun

AU - Hwang, Ha Na

AU - Jeong, Young Hun

AU - Yun, Ji Sun

AU - Nam, Joong Hee

AU - Cho, Jeong Ho

AU - Paik, Jong Hoo

AU - Lim, Jong Bong

AU - Nahm, Sahn

AU - Kim, Eung Soo

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N2 - 0.72Pb(Zr0.47Ti0.53)O3-0.28Pb[(Zn0.45Ni0.55)1/3Nb2/3]O3 (0.72PZT-0.28PZNN) thick films were prepared by using a tape casting method to develop new materials with high energy-density applicable to energy-harvesting devices. The piezoelectric strain constant (d 33), dielectric constant (e{open} 33 T /e{open} 0), piezoelectric voltage constant (g 33) and transduction coefficient (d 33·g 33) of the films were affected by the sintering temperature. These results could be attributed to the crystal structure, microstructures and secondary phases. However, the dielectric loss (tanδ) of the films was not changed remarkably with increasing sintering temperature. Typically, a d 33 of 452 pC/N, e{open} 33 T /e{open} 0 of 1444, d 33·g 33 of 20,340 × 10-15 m2/N and tanδ of 0.15% were obtained for the films sintered at 1050 °C for 1 h. The power generation performance of the piezoelectric unimorph cantilever was assessed to demonstrate the feasibility of the 0.72PZT-0.28PZNN piezoelectric thick film. Also, theoretical models were employed to predict the resonance frequency of the unimorph cantilever generator, and the predicted values were compared with experimental data.

AB - 0.72Pb(Zr0.47Ti0.53)O3-0.28Pb[(Zn0.45Ni0.55)1/3Nb2/3]O3 (0.72PZT-0.28PZNN) thick films were prepared by using a tape casting method to develop new materials with high energy-density applicable to energy-harvesting devices. The piezoelectric strain constant (d 33), dielectric constant (e{open} 33 T /e{open} 0), piezoelectric voltage constant (g 33) and transduction coefficient (d 33·g 33) of the films were affected by the sintering temperature. These results could be attributed to the crystal structure, microstructures and secondary phases. However, the dielectric loss (tanδ) of the films was not changed remarkably with increasing sintering temperature. Typically, a d 33 of 452 pC/N, e{open} 33 T /e{open} 0 of 1444, d 33·g 33 of 20,340 × 10-15 m2/N and tanδ of 0.15% were obtained for the films sintered at 1050 °C for 1 h. The power generation performance of the piezoelectric unimorph cantilever was assessed to demonstrate the feasibility of the 0.72PZT-0.28PZNN piezoelectric thick film. Also, theoretical models were employed to predict the resonance frequency of the unimorph cantilever generator, and the predicted values were compared with experimental data.

KW - 0.72PZT-0.28PZNN

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KW - Tape casting

KW - Thick film

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