4H-SiC Schottky rectifiers with dielectric overlap edge termination were exposed to 40 MeV protons at fluences from 5×107- 5×109cm-2. The reverse breakdown voltage decreased from ∼500V in unirradiated devices to ∼-450V after the highest proton dose. The reverse leakage current at -250V was approximately doubled under these conditions. The forward current at -2V decreased by ∼1% (fluence of 5×107cm-2) to ∼42% (fluence of 5×10 9cm-2), while the current at lower biases was increased due to the introduction of defect centers. The ideality factor, on-state resistance, and forward turn-on voltage showed modest increases for fluences of ≤5×108cm-2, but were more strongly affected (increase of 40%-75%) at the highest dose employed.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2002 Sept 23|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)