High energy proton irradiation effects on SiC Schottky rectifiers

S. Nigam, Jihyun Kim, F. Ren, G. Y. Chung, M. F. MacMillan, R. Dwivedi, T. N. Fogarty, R. Wilkins, K. K. Allums, C. R. Abernathy, S. J. Pearton, J. R. Williams

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Abstract

4H-SiC Schottky rectifiers with dielectric overlap edge termination were exposed to 40 MeV protons at fluences from 5×107- 5×109cm-2. The reverse breakdown voltage decreased from ∼500V in unirradiated devices to ∼-450V after the highest proton dose. The reverse leakage current at -250V was approximately doubled under these conditions. The forward current at -2V decreased by ∼1% (fluence of 5×107cm-2) to ∼42% (fluence of 5×10 9cm-2), while the current at lower biases was increased due to the introduction of defect centers. The ideality factor, on-state resistance, and forward turn-on voltage showed modest increases for fluences of ≤5×108cm-2, but were more strongly affected (increase of 40%-75%) at the highest dose employed.

Original languageEnglish
Pages (from-to)2385-2387
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number13
DOIs
Publication statusPublished - 2002 Sep 23

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Nigam, S., Kim, J., Ren, F., Chung, G. Y., MacMillan, M. F., Dwivedi, R., Fogarty, T. N., Wilkins, R., Allums, K. K., Abernathy, C. R., Pearton, S. J., & Williams, J. R. (2002). High energy proton irradiation effects on SiC Schottky rectifiers. Applied Physics Letters, 81(13), 2385-2387. https://doi.org/10.1063/1.1509468