High-energy proton irradiation of MgO/GaN metal oxide semiconductor diodes

Jihyun Kim; B. P. Gila; R. Mehandru; B. Luo; A. H. Onstine; C. R. Abernathy; F. Ren; K. K. Allums; R. Dwivedi; T. N. Forgarty; R. Wilkins; Y. Irokawa; S. J. Pearton

doi:10.1149/1.1481796

High-energy proton irradiation of MgO/GaN metal oxide semiconductor diodes

Jihyun Kim, B. P. Gila, R. Mehandru, B. Luo, A. H. Onstine, C. R. Abernathy, F. Ren, K. K. Allums, R. Dwivedi, T. N. Forgarty, R. Wilkins, Y. Irokawa, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

MgO/GaN metal oxide semiconductor diodes were irradiated with 40 MeV protons at a fluence of 5 × 10⁹ cm^-2, simulating long-term (10 yr) exposure in space-born applications. The result of the proton irradiation was a decrease in device capacitance, consistent with the creation of deep electron traps that reduce the effective channel doping and also a decrease in breakdown field from ∼10⁶ V cm^-1 in control devices to 0.76 × 10⁶ V cm^-1 in devices irradiated with the gate metal in place. The capacitance of the device irradiated with the contacts in place recovers to the same value as the contact diodes. The D_it values are decreased by the H₂ anneal in both the unirradiated and irradiated devices.

Original language	English
Pages (from-to)	G57-G59
Journal	Electrochemical and Solid-State Letters
Volume	5
Issue number	7
DOIs	https://doi.org/10.1149/1.1481796
Publication status	Published - 2002 Jul
Externally published	Yes

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.1481796

Cite this

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title = "High-energy proton irradiation of MgO/GaN metal oxide semiconductor diodes",

abstract = "MgO/GaN metal oxide semiconductor diodes were irradiated with 40 MeV protons at a fluence of 5 × 109 cm-2, simulating long-term (10 yr) exposure in space-born applications. The result of the proton irradiation was a decrease in device capacitance, consistent with the creation of deep electron traps that reduce the effective channel doping and also a decrease in breakdown field from ∼106 V cm-1 in control devices to 0.76 × 106 V cm-1 in devices irradiated with the gate metal in place. The capacitance of the device irradiated with the contacts in place recovers to the same value as the contact diodes. The Dit values are decreased by the H2 anneal in both the unirradiated and irradiated devices.",

author = "Jihyun Kim and Gila, {B. P.} and R. Mehandru and B. Luo and Onstine, {A. H.} and Abernathy, {C. R.} and F. Ren and Allums, {K. K.} and R. Dwivedi and Forgarty, {T. N.} and R. Wilkins and Y. Irokawa and Pearton, {S. J.}",

year = "2002",

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language = "English",

volume = "5",

pages = "G57--G59",

journal = "Electrochemical and Solid-State Letters",

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TY - JOUR

T1 - High-energy proton irradiation of MgO/GaN metal oxide semiconductor diodes

AU - Kim, Jihyun

AU - Gila, B. P.

AU - Mehandru, R.

AU - Luo, B.

AU - Onstine, A. H.

AU - Abernathy, C. R.

AU - Ren, F.

AU - Allums, K. K.

AU - Dwivedi, R.

AU - Forgarty, T. N.

AU - Wilkins, R.

AU - Irokawa, Y.

AU - Pearton, S. J.

PY - 2002/7

Y1 - 2002/7

N2 - MgO/GaN metal oxide semiconductor diodes were irradiated with 40 MeV protons at a fluence of 5 × 109 cm-2, simulating long-term (10 yr) exposure in space-born applications. The result of the proton irradiation was a decrease in device capacitance, consistent with the creation of deep electron traps that reduce the effective channel doping and also a decrease in breakdown field from ∼106 V cm-1 in control devices to 0.76 × 106 V cm-1 in devices irradiated with the gate metal in place. The capacitance of the device irradiated with the contacts in place recovers to the same value as the contact diodes. The Dit values are decreased by the H2 anneal in both the unirradiated and irradiated devices.

AB - MgO/GaN metal oxide semiconductor diodes were irradiated with 40 MeV protons at a fluence of 5 × 109 cm-2, simulating long-term (10 yr) exposure in space-born applications. The result of the proton irradiation was a decrease in device capacitance, consistent with the creation of deep electron traps that reduce the effective channel doping and also a decrease in breakdown field from ∼106 V cm-1 in control devices to 0.76 × 106 V cm-1 in devices irradiated with the gate metal in place. The capacitance of the device irradiated with the contacts in place recovers to the same value as the contact diodes. The Dit values are decreased by the H2 anneal in both the unirradiated and irradiated devices.

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JO - Electrochemical and Solid-State Letters

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ER -

High-energy proton irradiation of MgO/GaN metal oxide semiconductor diodes

Abstract

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