High-energy proton irradiation of MgO/GaN metal oxide semiconductor diodes

Ji Hyun Kim, B. P. Gila, R. Mehandru, B. Luo, A. H. Onstine, C. R. Abernathy, F. Ren, K. K. Allums, R. Dwivedi, T. N. Forgarty, R. Wilkins, Y. Irokawa, S. J. Pearton

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

MgO/GaN metal oxide semiconductor diodes were irradiated with 40 MeV protons at a fluence of 5 × 109 cm-2, simulating long-term (10 yr) exposure in space-born applications. The result of the proton irradiation was a decrease in device capacitance, consistent with the creation of deep electron traps that reduce the effective channel doping and also a decrease in breakdown field from ∼106 V cm-1 in control devices to 0.76 × 106 V cm-1 in devices irradiated with the gate metal in place. The capacitance of the device irradiated with the contacts in place recovers to the same value as the contact diodes. The Dit values are decreased by the H2 anneal in both the unirradiated and irradiated devices.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume5
Issue number7
DOIs
Publication statusPublished - 2002 Jul 1
Externally publishedYes

Fingerprint

Semiconductor diodes
Proton irradiation
semiconductor diodes
proton irradiation
metal oxide semiconductors
Capacitance
Metals
Electron traps
Protons
Diodes
capacitance
Doping (additives)
control equipment
energy
fluence
breakdown
diodes
traps
protons
Oxide semiconductors

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

Kim, J. H., Gila, B. P., Mehandru, R., Luo, B., Onstine, A. H., Abernathy, C. R., ... Pearton, S. J. (2002). High-energy proton irradiation of MgO/GaN metal oxide semiconductor diodes. Electrochemical and Solid-State Letters, 5(7). https://doi.org/10.1149/1.1481796

High-energy proton irradiation of MgO/GaN metal oxide semiconductor diodes. / Kim, Ji Hyun; Gila, B. P.; Mehandru, R.; Luo, B.; Onstine, A. H.; Abernathy, C. R.; Ren, F.; Allums, K. K.; Dwivedi, R.; Forgarty, T. N.; Wilkins, R.; Irokawa, Y.; Pearton, S. J.

In: Electrochemical and Solid-State Letters, Vol. 5, No. 7, 01.07.2002.

Research output: Contribution to journalArticle

Kim, JH, Gila, BP, Mehandru, R, Luo, B, Onstine, AH, Abernathy, CR, Ren, F, Allums, KK, Dwivedi, R, Forgarty, TN, Wilkins, R, Irokawa, Y & Pearton, SJ 2002, 'High-energy proton irradiation of MgO/GaN metal oxide semiconductor diodes', Electrochemical and Solid-State Letters, vol. 5, no. 7. https://doi.org/10.1149/1.1481796
Kim, Ji Hyun ; Gila, B. P. ; Mehandru, R. ; Luo, B. ; Onstine, A. H. ; Abernathy, C. R. ; Ren, F. ; Allums, K. K. ; Dwivedi, R. ; Forgarty, T. N. ; Wilkins, R. ; Irokawa, Y. ; Pearton, S. J. / High-energy proton irradiation of MgO/GaN metal oxide semiconductor diodes. In: Electrochemical and Solid-State Letters. 2002 ; Vol. 5, No. 7.
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