High extraction efficiency light-emitting-diodes using hemispherical corrugated interface substrate

Jeong Wook Lee, Jaehee Cho, Sukho Yoon, Hyunsoo Kim, Youn Joon Sung, Hyungkun Kim, Cheolsoo Sone, Yongjo Park, Tae Geun Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The external quantum efficiency of nitride light-emitting diodes (LEDs) grown on sapphire substrates is greatly influenced by the internal reflection of lights at the nitride-substrate interface. To improve the external quantum efficiency of nitride LEDs with an InGaN multi-quantum well (MQW) structure, we introduced various patterned structures at the interface, The output power was increased by 1.7 times by incorporating an optimized patterned structure in nitride LEDs. In this study, the corrugated interface substrate (CIS) pattern was fabricated by standard photolithography and subsequent reactive ion etching (RIE) process. When the flip-chip type LED grown on CIS was operated at a forward bias current 20mA at room temperature, emission wavelength, output power, and external quantum efficiency were 400 nm, 21 mW and 34%, respectively.

Original languageEnglish
Title of host publicationInstitute of Physics Conference Series
EditorsJ.-C. Woo, H. Hasegawa, Y.-S. Kwon, T. Yao, K.-H. Yoo
Pages333-339
Number of pages7
Volume184
Publication statusPublished - 2005
Event31st International Symposium of Compound Semiconductors 2004 - Seoul, Korea, Republic of
Duration: 2004 Sep 122004 Dec 16

Other

Other31st International Symposium of Compound Semiconductors 2004
CountryKorea, Republic of
CitySeoul
Period04/9/1204/12/16

Fingerprint

nitrides
light emitting diodes
quantum efficiency
output
photolithography
luminaires
sapphire
chips
etching
quantum wells
room temperature
wavelengths
ions

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Lee, J. W., Cho, J., Yoon, S., Kim, H., Sung, Y. J., Kim, H., ... Kim, T. G. (2005). High extraction efficiency light-emitting-diodes using hemispherical corrugated interface substrate. In J-C. Woo, H. Hasegawa, Y-S. Kwon, T. Yao, & K-H. Yoo (Eds.), Institute of Physics Conference Series (Vol. 184, pp. 333-339)

High extraction efficiency light-emitting-diodes using hemispherical corrugated interface substrate. / Lee, Jeong Wook; Cho, Jaehee; Yoon, Sukho; Kim, Hyunsoo; Sung, Youn Joon; Kim, Hyungkun; Sone, Cheolsoo; Park, Yongjo; Kim, Tae Geun.

Institute of Physics Conference Series. ed. / J.-C. Woo; H. Hasegawa; Y.-S. Kwon; T. Yao; K.-H. Yoo. Vol. 184 2005. p. 333-339.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, JW, Cho, J, Yoon, S, Kim, H, Sung, YJ, Kim, H, Sone, C, Park, Y & Kim, TG 2005, High extraction efficiency light-emitting-diodes using hemispherical corrugated interface substrate. in J-C Woo, H Hasegawa, Y-S Kwon, T Yao & K-H Yoo (eds), Institute of Physics Conference Series. vol. 184, pp. 333-339, 31st International Symposium of Compound Semiconductors 2004, Seoul, Korea, Republic of, 04/9/12.
Lee JW, Cho J, Yoon S, Kim H, Sung YJ, Kim H et al. High extraction efficiency light-emitting-diodes using hemispherical corrugated interface substrate. In Woo J-C, Hasegawa H, Kwon Y-S, Yao T, Yoo K-H, editors, Institute of Physics Conference Series. Vol. 184. 2005. p. 333-339
Lee, Jeong Wook ; Cho, Jaehee ; Yoon, Sukho ; Kim, Hyunsoo ; Sung, Youn Joon ; Kim, Hyungkun ; Sone, Cheolsoo ; Park, Yongjo ; Kim, Tae Geun. / High extraction efficiency light-emitting-diodes using hemispherical corrugated interface substrate. Institute of Physics Conference Series. editor / J.-C. Woo ; H. Hasegawa ; Y.-S. Kwon ; T. Yao ; K.-H. Yoo. Vol. 184 2005. pp. 333-339
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abstract = "The external quantum efficiency of nitride light-emitting diodes (LEDs) grown on sapphire substrates is greatly influenced by the internal reflection of lights at the nitride-substrate interface. To improve the external quantum efficiency of nitride LEDs with an InGaN multi-quantum well (MQW) structure, we introduced various patterned structures at the interface, The output power was increased by 1.7 times by incorporating an optimized patterned structure in nitride LEDs. In this study, the corrugated interface substrate (CIS) pattern was fabricated by standard photolithography and subsequent reactive ion etching (RIE) process. When the flip-chip type LED grown on CIS was operated at a forward bias current 20mA at room temperature, emission wavelength, output power, and external quantum efficiency were 400 nm, 21 mW and 34{\%}, respectively.",
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