TY - JOUR
T1 - High extraction efficiency light-emitting-diodes using hemispherical corrugated interface substrate
AU - Lee, Jeong Wook
AU - Cho, Jaehee
AU - Yoon, Sukho
AU - Kim, Hyunsoo
AU - Sung, Youn Joon
AU - Kim, Hyungkun
AU - Sone, Cheolsoo
AU - Park, Yongjo
AU - Kim, Tae Geun
PY - 2005
Y1 - 2005
N2 - The external quantum efficiency of nitride light-emitting diodes (LEDs) grown on sapphire substrates is greatly influenced by the internal reflection of lights at the nitride-substrate interface. To improve the external quantum efficiency of nitride LEDs with an InGaN multi-quantum well (MQW) structure, we introduced various patterned structures at the interface, The output power was increased by 1.7 times by incorporating an optimized patterned structure in nitride LEDs. In this study, the corrugated interface substrate (CIS) pattern was fabricated by standard photolithography and subsequent reactive ion etching (RIE) process. When the flip-chip type LED grown on CIS was operated at a forward bias current 20mA at room temperature, emission wavelength, output power, and external quantum efficiency were 400 nm, 21 mW and 34%, respectively.
AB - The external quantum efficiency of nitride light-emitting diodes (LEDs) grown on sapphire substrates is greatly influenced by the internal reflection of lights at the nitride-substrate interface. To improve the external quantum efficiency of nitride LEDs with an InGaN multi-quantum well (MQW) structure, we introduced various patterned structures at the interface, The output power was increased by 1.7 times by incorporating an optimized patterned structure in nitride LEDs. In this study, the corrugated interface substrate (CIS) pattern was fabricated by standard photolithography and subsequent reactive ion etching (RIE) process. When the flip-chip type LED grown on CIS was operated at a forward bias current 20mA at room temperature, emission wavelength, output power, and external quantum efficiency were 400 nm, 21 mW and 34%, respectively.
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M3 - Conference article
AN - SCOPUS:33644508333
SN - 0951-3248
VL - 184
SP - 333
EP - 339
JO - Institute of Physics Conference Series
JF - Institute of Physics Conference Series
T2 - 31st International Symposium of Compound Semiconductors 2004
Y2 - 12 September 2004 through 16 December 2004
ER -