High field-effect mobility pentacene thin-film transistors with organic and inorganic hybrid dielectric

M. H. Chung; J. H. Kwon; S. I. Shin; J. Choi; K. H. Cho; S. Nahm; B. K. Ju

High field-effect mobility pentacene thin-film transistors with organic and inorganic hybrid dielectric

M. H. Chung, J. H. Kwon, S. I. Shin, J. Choi, K. H. Cho, S. Nahm, B. K. Ju

Research output: Contribution to conference › Paper › peer-review

Abstract

We fabricated pentacene thin-film transistors (TFTs) with organic and inorganic hybrid gate dielectric consisting of Bi₅Nb ₃O₁₅ (B₅N₃) and cross-linked poly (4-vinylphenol) (PVP). We obtained excellent electrical characteristics, including field-effect mobility (p) of 1.37 cm²/V s, current on/off ratio of ∼ 10⁵, and subthreshold slope (SS) of 2.16 V/dec.

Original language	English
Pages	705-706
Number of pages	2
Publication status	Published - 2008
Event	15th International Display Workshops, IDW '08 - Niigata, Japan Duration: 2008 Dec 3 → 2008 Dec 5

Other

Other	15th International Display Workshops, IDW '08
Country/Territory	Japan
City	Niigata
Period	08/12/3 → 08/12/5

ASJC Scopus subject areas

Hardware and Architecture
Human-Computer Interaction
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Cite this

@conference{8d210ee01186460ebcdf4d6d34f891a0,

title = "High field-effect mobility pentacene thin-film transistors with organic and inorganic hybrid dielectric",

abstract = "We fabricated pentacene thin-film transistors (TFTs) with organic and inorganic hybrid gate dielectric consisting of Bi5Nb 3O15 (B5N3) and cross-linked poly (4-vinylphenol) (PVP). We obtained excellent electrical characteristics, including field-effect mobility (p) of 1.37 cm2/V s, current on/off ratio of ∼ 105, and subthreshold slope (SS) of 2.16 V/dec.",

author = "Chung, {M. H.} and Kwon, {J. H.} and Shin, {S. I.} and J. Choi and Cho, {K. H.} and S. Nahm and Ju, {B. K.}",

year = "2008",

language = "English",

pages = "705--706",

note = "15th International Display Workshops, IDW '08 ; Conference date: 03-12-2008 Through 05-12-2008",

}

TY - CONF

T1 - High field-effect mobility pentacene thin-film transistors with organic and inorganic hybrid dielectric

AU - Chung, M. H.

AU - Kwon, J. H.

AU - Shin, S. I.

AU - Choi, J.

AU - Cho, K. H.

AU - Nahm, S.

AU - Ju, B. K.

PY - 2008

Y1 - 2008

N2 - We fabricated pentacene thin-film transistors (TFTs) with organic and inorganic hybrid gate dielectric consisting of Bi5Nb 3O15 (B5N3) and cross-linked poly (4-vinylphenol) (PVP). We obtained excellent electrical characteristics, including field-effect mobility (p) of 1.37 cm2/V s, current on/off ratio of ∼ 105, and subthreshold slope (SS) of 2.16 V/dec.

AB - We fabricated pentacene thin-film transistors (TFTs) with organic and inorganic hybrid gate dielectric consisting of Bi5Nb 3O15 (B5N3) and cross-linked poly (4-vinylphenol) (PVP). We obtained excellent electrical characteristics, including field-effect mobility (p) of 1.37 cm2/V s, current on/off ratio of ∼ 105, and subthreshold slope (SS) of 2.16 V/dec.

UR - http://www.scopus.com/inward/record.url?scp=77954137738&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954137738&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:77954137738

SP - 705

EP - 706

T2 - 15th International Display Workshops, IDW '08

Y2 - 3 December 2008 through 5 December 2008

ER -

High field-effect mobility pentacene thin-film transistors with organic and inorganic hybrid dielectric

Abstract

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ASJC Scopus subject areas

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