High field-effect mobility pentacene thin-film transistors with organic and inorganic hybrid dielectric

M. H. Chung, J. H. Kwon, S. I. Shin, J. Choi, K. H. Cho, S. Nahm, B. K. Ju

Research output: Contribution to conferencePaper

Abstract

We fabricated pentacene thin-film transistors (TFTs) with organic and inorganic hybrid gate dielectric consisting of Bi5Nb 3O15 (B5N3) and cross-linked poly (4-vinylphenol) (PVP). We obtained excellent electrical characteristics, including field-effect mobility (p) of 1.37 cm2/V s, current on/off ratio of ∼ 105, and subthreshold slope (SS) of 2.16 V/dec.

Original languageEnglish
Pages705-706
Number of pages2
Publication statusPublished - 2008
Event15th International Display Workshops, IDW '08 - Niigata, Japan
Duration: 2008 Dec 32008 Dec 5

Other

Other15th International Display Workshops, IDW '08
CountryJapan
CityNiigata
Period08/12/308/12/5

ASJC Scopus subject areas

  • Hardware and Architecture
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'High field-effect mobility pentacene thin-film transistors with organic and inorganic hybrid dielectric'. Together they form a unique fingerprint.

  • Cite this

    Chung, M. H., Kwon, J. H., Shin, S. I., Choi, J., Cho, K. H., Nahm, S., & Ju, B. K. (2008). High field-effect mobility pentacene thin-film transistors with organic and inorganic hybrid dielectric. 705-706. Paper presented at 15th International Display Workshops, IDW '08, Niigata, Japan.