Abstract
β-Ga2O3, which is a ultra-wide band-gap semiconductor, is an attractive material for next-generation solar-blind photodetectors. A high gain solar-blind Schottky barrier photodetector using an exfoliated single crystalline β-Ga2O3 nano-layer was demonstrated by employing internal carrier multiplication process. Excellent spectral selectivity with high responsivity was obtained between UV-A and UV-C wavelengths with fast response/decay characteristics. The gain of our β-Ga2O3 solar-blind PD was ∼3.78 × 103 under the multiplication mode at the reverse bias of −60 V, where the peak electric field was estimated to be 4.3 MV/cm (equivalent to impact ionization coefficient of 5 × 103 cm−1). Compared with non-multiplication mode, outstanding photo-sensing performances were achieved under the multiplication mode, including a responsivity of 8.18 A/W, a photocurrent-to-dark-current ratio of ∼103 and external quantum efficiency of ∼4 × 103%. High gain via carrier multiplication process in a β-Ga2O3 photodiode proposes a new route toward high performance solar-blind deep-UV photodetectors.
| Original language | English |
|---|---|
| Pages (from-to) | Q196-Q200 |
| Journal | ECS Journal of Solid State Science and Technology |
| Volume | 7 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2018 Jan 1 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
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High gain β-Ga2O3 solar-blind Schottky barrier photodiodes via carrier multiplication process. / Oh, Sooyeoun; Kim, Hyoung Woo; Kim, Ji Hyun.
In: ECS Journal of Solid State Science and Technology, Vol. 7, No. 11, 01.01.2018, p. Q196-Q200.Research output: Contribution to journal › Article
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TY - JOUR
T1 - High gain β-Ga2O3 solar-blind Schottky barrier photodiodes via carrier multiplication process
AU - Oh, Sooyeoun
AU - Kim, Hyoung Woo
AU - Kim, Ji Hyun
PY - 2018/1/1
Y1 - 2018/1/1
N2 - β-Ga2O3, which is a ultra-wide band-gap semiconductor, is an attractive material for next-generation solar-blind photodetectors. A high gain solar-blind Schottky barrier photodetector using an exfoliated single crystalline β-Ga2O3 nano-layer was demonstrated by employing internal carrier multiplication process. Excellent spectral selectivity with high responsivity was obtained between UV-A and UV-C wavelengths with fast response/decay characteristics. The gain of our β-Ga2O3 solar-blind PD was ∼3.78 × 103 under the multiplication mode at the reverse bias of −60 V, where the peak electric field was estimated to be 4.3 MV/cm (equivalent to impact ionization coefficient of 5 × 103 cm−1). Compared with non-multiplication mode, outstanding photo-sensing performances were achieved under the multiplication mode, including a responsivity of 8.18 A/W, a photocurrent-to-dark-current ratio of ∼103 and external quantum efficiency of ∼4 × 103%. High gain via carrier multiplication process in a β-Ga2O3 photodiode proposes a new route toward high performance solar-blind deep-UV photodetectors.
AB - β-Ga2O3, which is a ultra-wide band-gap semiconductor, is an attractive material for next-generation solar-blind photodetectors. A high gain solar-blind Schottky barrier photodetector using an exfoliated single crystalline β-Ga2O3 nano-layer was demonstrated by employing internal carrier multiplication process. Excellent spectral selectivity with high responsivity was obtained between UV-A and UV-C wavelengths with fast response/decay characteristics. The gain of our β-Ga2O3 solar-blind PD was ∼3.78 × 103 under the multiplication mode at the reverse bias of −60 V, where the peak electric field was estimated to be 4.3 MV/cm (equivalent to impact ionization coefficient of 5 × 103 cm−1). Compared with non-multiplication mode, outstanding photo-sensing performances were achieved under the multiplication mode, including a responsivity of 8.18 A/W, a photocurrent-to-dark-current ratio of ∼103 and external quantum efficiency of ∼4 × 103%. High gain via carrier multiplication process in a β-Ga2O3 photodiode proposes a new route toward high performance solar-blind deep-UV photodetectors.
UR - http://www.scopus.com/inward/record.url?scp=85070110029&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85070110029&partnerID=8YFLogxK
U2 - 10.1149/2.0151811jss
DO - 10.1149/2.0151811jss
M3 - Article
AN - SCOPUS:85070110029
VL - 7
SP - Q196-Q200
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
SN - 2162-8769
IS - 11
ER -