TY - JOUR
T1 - High gain β-Ga2O3 solar-blind Schottky barrier photodiodes via carrier multiplication process
AU - Oh, Sooyeoun
AU - Kim, Hyoung Woo
AU - Kim, Jihyun
N1 - Funding Information:
The research at Korea University was supported by the New & Renewable Energy Core Technology Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), granted financial resource from the Ministry of Trade, Industry & Energy, Korea (Nos. 20172010104830 and 20173010012970).
Publisher Copyright:
© 2018 The Electrochemical Society.
PY - 2018
Y1 - 2018
N2 - β-Ga2O3, which is a ultra-wide band-gap semiconductor, is an attractive material for next-generation solar-blind photodetectors. A high gain solar-blind Schottky barrier photodetector using an exfoliated single crystalline β-Ga2O3 nano-layer was demonstrated by employing internal carrier multiplication process. Excellent spectral selectivity with high responsivity was obtained between UV-A and UV-C wavelengths with fast response/decay characteristics. The gain of our β-Ga2O3 solar-blind PD was ∼3.78 × 103 under the multiplication mode at the reverse bias of −60 V, where the peak electric field was estimated to be 4.3 MV/cm (equivalent to impact ionization coefficient of 5 × 103 cm−1). Compared with non-multiplication mode, outstanding photo-sensing performances were achieved under the multiplication mode, including a responsivity of 8.18 A/W, a photocurrent-to-dark-current ratio of ∼103 and external quantum efficiency of ∼4 × 103%. High gain via carrier multiplication process in a β-Ga2O3 photodiode proposes a new route toward high performance solar-blind deep-UV photodetectors.
AB - β-Ga2O3, which is a ultra-wide band-gap semiconductor, is an attractive material for next-generation solar-blind photodetectors. A high gain solar-blind Schottky barrier photodetector using an exfoliated single crystalline β-Ga2O3 nano-layer was demonstrated by employing internal carrier multiplication process. Excellent spectral selectivity with high responsivity was obtained between UV-A and UV-C wavelengths with fast response/decay characteristics. The gain of our β-Ga2O3 solar-blind PD was ∼3.78 × 103 under the multiplication mode at the reverse bias of −60 V, where the peak electric field was estimated to be 4.3 MV/cm (equivalent to impact ionization coefficient of 5 × 103 cm−1). Compared with non-multiplication mode, outstanding photo-sensing performances were achieved under the multiplication mode, including a responsivity of 8.18 A/W, a photocurrent-to-dark-current ratio of ∼103 and external quantum efficiency of ∼4 × 103%. High gain via carrier multiplication process in a β-Ga2O3 photodiode proposes a new route toward high performance solar-blind deep-UV photodetectors.
UR - http://www.scopus.com/inward/record.url?scp=85070110029&partnerID=8YFLogxK
U2 - 10.1149/2.0151811jss
DO - 10.1149/2.0151811jss
M3 - Article
AN - SCOPUS:85070110029
VL - 7
SP - Q196-Q200
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
SN - 2162-8769
IS - 11
ER -