High H2 sensing behavior of TiO2 films formed by thermal oxidation

Youn Ki Jun, Hyun Su Kim, Jong Heun Lee, Seong Hyeon Hong

Research output: Contribution to journalArticle

56 Citations (Scopus)

Abstract

A highly sensitive H2 gas sensor was prepared by the thermal oxidation of a Ti plate at 600-1000 °C. The H2 sensitivity (the ratio of the resistances between N2 and 1.0% H2 balanced with N2) of the oxidized TiO2 increased exponentially with increasing oxidation temperature up to 900 °C but decreased drastically at 1000 °C. The maximum sensitivity to 1.0% H2 was 1.2 × 106, which is the highest value reported in the literature. The mechanism for the enhanced H2 sensing was examined by investigating the phase, thickness and morphology of the oxidized TiO2 layer and the sensor response time. The thermally oxidized specimens exhibited an approximately linear dependence of the sensitivity on the H2 concentrations from 50 to 10,000 ppm, and excellent sensitivity (∼10 3) was still obtained in the sensor operated at temperatures as low as 150 °C.

Original languageEnglish
Pages (from-to)264-270
Number of pages7
JournalSensors and Actuators, B: Chemical
Volume107
Issue number1 SPEC. ISS.
DOIs
Publication statusPublished - 2005 May 27

Fingerprint

Oxidation
oxidation
sensitivity
Sensors
Chemical sensors
sensors
Temperature
temperature
Hot Temperature
gases

Keywords

  • H sensor
  • Porous layer
  • Thermal oxidation
  • TiO

ASJC Scopus subject areas

  • Analytical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

High H2 sensing behavior of TiO2 films formed by thermal oxidation. / Jun, Youn Ki; Kim, Hyun Su; Lee, Jong Heun; Hong, Seong Hyeon.

In: Sensors and Actuators, B: Chemical, Vol. 107, No. 1 SPEC. ISS., 27.05.2005, p. 264-270.

Research output: Contribution to journalArticle

Jun, Youn Ki ; Kim, Hyun Su ; Lee, Jong Heun ; Hong, Seong Hyeon. / High H2 sensing behavior of TiO2 films formed by thermal oxidation. In: Sensors and Actuators, B: Chemical. 2005 ; Vol. 107, No. 1 SPEC. ISS. pp. 264-270.
@article{dbaeedd379f643fa87f7633e6941022a,
title = "High H2 sensing behavior of TiO2 films formed by thermal oxidation",
abstract = "A highly sensitive H2 gas sensor was prepared by the thermal oxidation of a Ti plate at 600-1000 °C. The H2 sensitivity (the ratio of the resistances between N2 and 1.0{\%} H2 balanced with N2) of the oxidized TiO2 increased exponentially with increasing oxidation temperature up to 900 °C but decreased drastically at 1000 °C. The maximum sensitivity to 1.0{\%} H2 was 1.2 × 106, which is the highest value reported in the literature. The mechanism for the enhanced H2 sensing was examined by investigating the phase, thickness and morphology of the oxidized TiO2 layer and the sensor response time. The thermally oxidized specimens exhibited an approximately linear dependence of the sensitivity on the H2 concentrations from 50 to 10,000 ppm, and excellent sensitivity (∼10 3) was still obtained in the sensor operated at temperatures as low as 150 °C.",
keywords = "H sensor, Porous layer, Thermal oxidation, TiO",
author = "Jun, {Youn Ki} and Kim, {Hyun Su} and Lee, {Jong Heun} and Hong, {Seong Hyeon}",
year = "2005",
month = "5",
day = "27",
doi = "10.1016/j.snb.2004.10.010",
language = "English",
volume = "107",
pages = "264--270",
journal = "Sensors and Actuators, B: Chemical",
issn = "0925-4005",
publisher = "Elsevier",
number = "1 SPEC. ISS.",

}

TY - JOUR

T1 - High H2 sensing behavior of TiO2 films formed by thermal oxidation

AU - Jun, Youn Ki

AU - Kim, Hyun Su

AU - Lee, Jong Heun

AU - Hong, Seong Hyeon

PY - 2005/5/27

Y1 - 2005/5/27

N2 - A highly sensitive H2 gas sensor was prepared by the thermal oxidation of a Ti plate at 600-1000 °C. The H2 sensitivity (the ratio of the resistances between N2 and 1.0% H2 balanced with N2) of the oxidized TiO2 increased exponentially with increasing oxidation temperature up to 900 °C but decreased drastically at 1000 °C. The maximum sensitivity to 1.0% H2 was 1.2 × 106, which is the highest value reported in the literature. The mechanism for the enhanced H2 sensing was examined by investigating the phase, thickness and morphology of the oxidized TiO2 layer and the sensor response time. The thermally oxidized specimens exhibited an approximately linear dependence of the sensitivity on the H2 concentrations from 50 to 10,000 ppm, and excellent sensitivity (∼10 3) was still obtained in the sensor operated at temperatures as low as 150 °C.

AB - A highly sensitive H2 gas sensor was prepared by the thermal oxidation of a Ti plate at 600-1000 °C. The H2 sensitivity (the ratio of the resistances between N2 and 1.0% H2 balanced with N2) of the oxidized TiO2 increased exponentially with increasing oxidation temperature up to 900 °C but decreased drastically at 1000 °C. The maximum sensitivity to 1.0% H2 was 1.2 × 106, which is the highest value reported in the literature. The mechanism for the enhanced H2 sensing was examined by investigating the phase, thickness and morphology of the oxidized TiO2 layer and the sensor response time. The thermally oxidized specimens exhibited an approximately linear dependence of the sensitivity on the H2 concentrations from 50 to 10,000 ppm, and excellent sensitivity (∼10 3) was still obtained in the sensor operated at temperatures as low as 150 °C.

KW - H sensor

KW - Porous layer

KW - Thermal oxidation

KW - TiO

UR - http://www.scopus.com/inward/record.url?scp=18544372294&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18544372294&partnerID=8YFLogxK

U2 - 10.1016/j.snb.2004.10.010

DO - 10.1016/j.snb.2004.10.010

M3 - Article

AN - SCOPUS:18544372294

VL - 107

SP - 264

EP - 270

JO - Sensors and Actuators, B: Chemical

JF - Sensors and Actuators, B: Chemical

SN - 0925-4005

IS - 1 SPEC. ISS.

ER -