High H2 sensing behavior of TiO2 films formed by thermal oxidation

Youn Ki Jun; Hyun Su Kim; Jong Heun Lee; Seong Hyeon Hong

doi:10.1016/j.snb.2004.10.010

High H₂ sensing behavior of TiO₂ films formed by thermal oxidation

Youn Ki Jun, Hyun Su Kim, Jong Heun Lee, Seong Hyeon Hong

Research output: Contribution to journal › Article › peer-review

66 Citations (Scopus)

Abstract

A highly sensitive H₂ gas sensor was prepared by the thermal oxidation of a Ti plate at 600-1000 °C. The H₂ sensitivity (the ratio of the resistances between N₂ and 1.0% H₂ balanced with N₂) of the oxidized TiO₂ increased exponentially with increasing oxidation temperature up to 900 °C but decreased drastically at 1000 °C. The maximum sensitivity to 1.0% H₂ was 1.2 × 10⁶, which is the highest value reported in the literature. The mechanism for the enhanced H₂ sensing was examined by investigating the phase, thickness and morphology of the oxidized TiO₂ layer and the sensor response time. The thermally oxidized specimens exhibited an approximately linear dependence of the sensitivity on the H₂ concentrations from 50 to 10,000 ppm, and excellent sensitivity (∼10 ³) was still obtained in the sensor operated at temperatures as low as 150 °C.

Original language	English
Pages (from-to)	264-270
Number of pages	7
Journal	Sensors and Actuators, B: Chemical
Volume	107
Issue number	1 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.snb.2004.10.010
Publication status	Published - 2005 May 27

Keywords

H sensor
Porous layer
Thermal oxidation
TiO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/j.snb.2004.10.010

Cite this

@article{dbaeedd379f643fa87f7633e6941022a,

title = "High H2 sensing behavior of TiO2 films formed by thermal oxidation",

abstract = "A highly sensitive H2 gas sensor was prepared by the thermal oxidation of a Ti plate at 600-1000 °C. The H2 sensitivity (the ratio of the resistances between N2 and 1.0% H2 balanced with N2) of the oxidized TiO2 increased exponentially with increasing oxidation temperature up to 900 °C but decreased drastically at 1000 °C. The maximum sensitivity to 1.0% H2 was 1.2 × 106, which is the highest value reported in the literature. The mechanism for the enhanced H2 sensing was examined by investigating the phase, thickness and morphology of the oxidized TiO2 layer and the sensor response time. The thermally oxidized specimens exhibited an approximately linear dependence of the sensitivity on the H2 concentrations from 50 to 10,000 ppm, and excellent sensitivity (∼10 3) was still obtained in the sensor operated at temperatures as low as 150 °C.",

keywords = "H sensor, Porous layer, Thermal oxidation, TiO",

author = "Jun, {Youn Ki} and Kim, {Hyun Su} and Lee, {Jong Heun} and Hong, {Seong Hyeon}",

note = "Funding Information: This work was supported by the Nano System Institute-National Core Research Center program of KOSEF at Seoul National University, Korea. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.",

year = "2005",

month = may,

day = "27",

doi = "10.1016/j.snb.2004.10.010",

language = "English",

volume = "107",

pages = "264--270",

journal = "Sensors and Actuators, B: Chemical",

issn = "0925-4005",

publisher = "Elsevier",

number = "1 SPEC. ISS.",

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T1 - High H2 sensing behavior of TiO2 films formed by thermal oxidation

AU - Jun, Youn Ki

AU - Kim, Hyun Su

AU - Lee, Jong Heun

AU - Hong, Seong Hyeon

N1 - Funding Information: This work was supported by the Nano System Institute-National Core Research Center program of KOSEF at Seoul National University, Korea. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.

PY - 2005/5/27

Y1 - 2005/5/27

N2 - A highly sensitive H2 gas sensor was prepared by the thermal oxidation of a Ti plate at 600-1000 °C. The H2 sensitivity (the ratio of the resistances between N2 and 1.0% H2 balanced with N2) of the oxidized TiO2 increased exponentially with increasing oxidation temperature up to 900 °C but decreased drastically at 1000 °C. The maximum sensitivity to 1.0% H2 was 1.2 × 106, which is the highest value reported in the literature. The mechanism for the enhanced H2 sensing was examined by investigating the phase, thickness and morphology of the oxidized TiO2 layer and the sensor response time. The thermally oxidized specimens exhibited an approximately linear dependence of the sensitivity on the H2 concentrations from 50 to 10,000 ppm, and excellent sensitivity (∼10 3) was still obtained in the sensor operated at temperatures as low as 150 °C.

AB - A highly sensitive H2 gas sensor was prepared by the thermal oxidation of a Ti plate at 600-1000 °C. The H2 sensitivity (the ratio of the resistances between N2 and 1.0% H2 balanced with N2) of the oxidized TiO2 increased exponentially with increasing oxidation temperature up to 900 °C but decreased drastically at 1000 °C. The maximum sensitivity to 1.0% H2 was 1.2 × 106, which is the highest value reported in the literature. The mechanism for the enhanced H2 sensing was examined by investigating the phase, thickness and morphology of the oxidized TiO2 layer and the sensor response time. The thermally oxidized specimens exhibited an approximately linear dependence of the sensitivity on the H2 concentrations from 50 to 10,000 ppm, and excellent sensitivity (∼10 3) was still obtained in the sensor operated at temperatures as low as 150 °C.

KW - H sensor

KW - Porous layer

KW - Thermal oxidation

KW - TiO

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