High mobility in a two dimensional electron system with a thinned barrier

Youn Ho Park, Hyun Cheol Koo, Joonyeon Chang, Suk Hee Han, Mark Johnson

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A variety of novel experiments involving mesa structures of a two dimensional electron system (2DES) require the fabrication of a metal electrode on top of the mesa. We describe a fabrication process in which the top barrier layer is thinned to achieve low interface resistance, and the effect of the diminished barrier layer on the transport characteristics of carriers in the 2DES is studied. The sample is an InAs inserted heterostructure with strong intrinsic spin-orbit interaction α. Shubnikov-de Haas, resistivity and Hall experiments are used to characterize the carrier density, mobility and spin-orbit interaction of the carriers and to compare characteristics with a sample in which the structure is not altered. Our results show that the integrity of the heterostructure and the characteristics of the carriers can be maintained when the thickness of the top barrier is as little as 5 ± 2 nm.

Original languageEnglish
Pages (from-to)1599-1601
Number of pages3
JournalSolid State Communications
Volume151
Issue number21
DOIs
Publication statusPublished - 2011 Nov
Externally publishedYes

Keywords

  • A. Quantum wells
  • D. Electronic transport
  • D. Spinorbit effects

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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  • Cite this

    Park, Y. H., Koo, H. C., Chang, J., Han, S. H., & Johnson, M. (2011). High mobility in a two dimensional electron system with a thinned barrier. Solid State Communications, 151(21), 1599-1601. https://doi.org/10.1016/j.ssc.2011.07.022