High-mobility pentacene thin-film phototransistor with poly-4-vinylphenol gate dielectric

Jae Hong Kwon, Myung Ho Chung, Tae Yeon Oh, Hyeon Seok Bae, Jung Ho Park, Byeong Kwon Ju, Fahrettin Yakuphanoglu

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

An organic thin-film transistor was fabricated with pentacene as the active material and poly(4-vinyl phenol) as the gate-dielectric material. Atomic force microscope image shows that the pentacene film grows in the polycrystalline structure of the poly-4-vinylphenol (PVP) dielectric layer with the surface root-mean square (RMS) roughness of 6.0 nm and average grain size of 800 nm. The pentacene thin-film transistor exhibited a saturation field-effect mobility of 1.64 cm2/V s, a threshold voltage of -18 V, a sub-threshold swing of 3.53 V/decade, on/off-current ratio of 7.1 × 104 and interface trap density of 5.39 × 1012 eV-1 cm-2. The higher mobility of pentacene on poly(4-vinyl phenol) layer is attributed to the larger grain size of the pentacene. The photoresponsive properties of the organic thin-film transistor were investigated under various illumination intensities. The photosensitivity was measured as 1.46 at an illumination intensity of 100 mW/cm2 at the off state. This suggests that the pentacene thin-film transistor shows a phototransistor behavior.

Original languageEnglish
Pages (from-to)312-316
Number of pages5
JournalSensors and Actuators, A: Physical
Volume156
Issue number2
DOIs
Publication statusPublished - 2009 Dec

Keywords

  • Organic thin-film transistor
  • Pentacene
  • Photoresponse
  • Poly-4-vinylphenol

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering

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