High-mobility pentacene thin-film phototransistor with poly-4-vinylphenol gate dielectric

Jae Hong Kwon, Myung H. Chung, Tae Yeon Oh, Hyeon Seok Bae, Jung ho Park, Byeong Kwon Ju, Fahrettin Yakuphanoglu

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

An organic thin-film transistor was fabricated with pentacene as the active material and poly(4-vinyl phenol) as the gate-dielectric material. Atomic force microscope image shows that the pentacene film grows in the polycrystalline structure of the poly-4-vinylphenol (PVP) dielectric layer with the surface root-mean square (RMS) roughness of 6.0 nm and average grain size of 800 nm. The pentacene thin-film transistor exhibited a saturation field-effect mobility of 1.64 cm2/V s, a threshold voltage of -18 V, a sub-threshold swing of 3.53 V/decade, on/off-current ratio of 7.1 × 104 and interface trap density of 5.39 × 1012 eV-1 cm-2. The higher mobility of pentacene on poly(4-vinyl phenol) layer is attributed to the larger grain size of the pentacene. The photoresponsive properties of the organic thin-film transistor were investigated under various illumination intensities. The photosensitivity was measured as 1.46 at an illumination intensity of 100 mW/cm2 at the off state. This suggests that the pentacene thin-film transistor shows a phototransistor behavior.

Original languageEnglish
Pages (from-to)312-316
Number of pages5
JournalSensors and Actuators, A: Physical
Volume156
Issue number2
DOIs
Publication statusPublished - 2009 Dec 1

Fingerprint

Phototransistors
phototransistors
Gate dielectrics
Thin film transistors
transistors
Thin films
thin films
phenols
Phenols
Lighting
grain size
illumination
Phenol
Photosensitivity
photosensitivity
Threshold voltage
threshold voltage
Microscopes
roughness
Surface roughness

Keywords

  • Organic thin-film transistor
  • Pentacene
  • Photoresponse
  • Poly-4-vinylphenol

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Instrumentation

Cite this

High-mobility pentacene thin-film phototransistor with poly-4-vinylphenol gate dielectric. / Kwon, Jae Hong; Chung, Myung H.; Oh, Tae Yeon; Bae, Hyeon Seok; Park, Jung ho; Ju, Byeong Kwon; Yakuphanoglu, Fahrettin.

In: Sensors and Actuators, A: Physical, Vol. 156, No. 2, 01.12.2009, p. 312-316.

Research output: Contribution to journalArticle

Kwon, Jae Hong ; Chung, Myung H. ; Oh, Tae Yeon ; Bae, Hyeon Seok ; Park, Jung ho ; Ju, Byeong Kwon ; Yakuphanoglu, Fahrettin. / High-mobility pentacene thin-film phototransistor with poly-4-vinylphenol gate dielectric. In: Sensors and Actuators, A: Physical. 2009 ; Vol. 156, No. 2. pp. 312-316.
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