High-performance amorphous indium oxide thin-film transistors fabricated by an aqueous solution process at low temperature

Kookhyun Choi, Minseok Kim, Seongpil Chang, Tae Yeon Oh, Shin Woo Jeong, Hyeon Jun Ha, Byeong Kwon Ju

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

This paper presents low temperature solution-processed fabrication techniques for modern thin-film transistors (TFTs). We have investigated the electrical performance of aqueous solution-processed amorphous indium oxide (a-In2O3) TFTs prepared using different annealing temperatures. Even though the a-In2O3 TFTs were annealed at 200 °C, electrical characteristics of aqueous solution-processed a-In2O3 TFTs were obtained. High performance such as a saturation mobility of 8.6 cm2 V-1 s-1 and an on/off current ratio of over 106 was exhibited by a-In 2O3 TFTs annealed at 250 °C.

Original languageEnglish
Article number060204
JournalJapanese journal of applied physics
Volume52
Issue number6 PART 1
DOIs
Publication statusPublished - 2013 Jun

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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