High-performance amorphous indium oxide thin-film transistors fabricated by an aqueous solution process at low temperature

Kookhyun Choi, Minseok Kim, Seongpil Chang, Tae Yeon Oh, Shin Woo Jeong, Hyeon Jun Ha, Byeong Kwon Ju

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This paper presents low temperature solution-processed fabrication techniques for modern thin-film transistors (TFTs). We have investigated the electrical performance of aqueous solution-processed amorphous indium oxide (a-In2O3) TFTs prepared using different annealing temperatures. Even though the a-In2O3 TFTs were annealed at 200 °C, electrical characteristics of aqueous solution-processed a-In2O3 TFTs were obtained. High performance such as a saturation mobility of 8.6 cm2 V-1 s-1 and an on/off current ratio of over 106 was exhibited by a-In 2O3 TFTs annealed at 250 °C.

Original languageEnglish
Article number060204
JournalJapanese Journal of Applied Physics
Issue number6 PART 1
Publication statusPublished - 2013 Jun 1


ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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