High-performance and low-power rewritable SiOx 1 kbit one diode-one resistor crossbar memory array

Gunuk Wang, Adam C. Lauchner, Jian Lin, Douglas Natelson, Krishna V. Palem, James M. Tour

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

An entire 1-kilobit crossbar device based upon SiOx resistive memories with integrated diodes has been made. The SiOx-based one diode-one resistor device system has promise to satisfy the prerequisite conditions for next generation non-volatile memory applications.

Original languageEnglish
Pages (from-to)4789-4793
Number of pages5
JournalAdvanced Materials
Volume25
Issue number34
DOIs
Publication statusPublished - 2013 Sep 14
Externally publishedYes

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Resistors
Diodes
Data storage equipment

Keywords

  • non-volatile memory
  • one diode-one resistor
  • silicon oxides

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

High-performance and low-power rewritable SiOx 1 kbit one diode-one resistor crossbar memory array. / Wang, Gunuk; Lauchner, Adam C.; Lin, Jian; Natelson, Douglas; Palem, Krishna V.; Tour, James M.

In: Advanced Materials, Vol. 25, No. 34, 14.09.2013, p. 4789-4793.

Research output: Contribution to journalArticle

Wang, Gunuk ; Lauchner, Adam C. ; Lin, Jian ; Natelson, Douglas ; Palem, Krishna V. ; Tour, James M. / High-performance and low-power rewritable SiOx 1 kbit one diode-one resistor crossbar memory array. In: Advanced Materials. 2013 ; Vol. 25, No. 34. pp. 4789-4793.
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