High-performance and low-power rewritable SiOx 1 kbit one diode-one resistor crossbar memory array

Gunuk Wang, Adam C. Lauchner, Jian Lin, Douglas Natelson, Krishna V. Palem, James M. Tour

Research output: Contribution to journalArticlepeer-review

47 Citations (Scopus)

Abstract

An entire 1-kilobit crossbar device based upon SiOx resistive memories with integrated diodes has been made. The SiOx-based one diode-one resistor device system has promise to satisfy the prerequisite conditions for next generation non-volatile memory applications.

Original languageEnglish
Pages (from-to)4789-4793
Number of pages5
JournalAdvanced Materials
Volume25
Issue number34
DOIs
Publication statusPublished - 2013 Sep 14
Externally publishedYes

Keywords

  • non-volatile memory
  • one diode-one resistor
  • silicon oxides

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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