High-performance CH3NH3PbI3 inverted planar perovskite solar cells via ammonium halide additives

Muhammad Jahandar, N. Khan, Muhammad Jahankhan, Chang Eun Song, Hang Ken Lee, Sang Kyu Lee, Won Suk Shin, Jong Cheol Lee, Sang Hyuk Im, Sang Jin Moon

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Organic-inorganic hybrid perovskites have recently attracted substantial attention as a top candidate for use as light-absorbing materials in high-efficiency, low-cost and solution-processable photovoltaic devices owing to their excellent optoelectronic properties. Here, we fabricated inverted planar perovskite solar cells by incorporating small amounts of ammonium halide NH4X (X = F, Cl, Br, I) additives into a CH3NH3PbI3 (MAPbI3) perovskite solution. A compact and uniform perovskite absorber layer with large perovskite crystalline grains is realized by simply incorporating small amounts of additives and by using an anti-solvent engineering technique to control the nucleation and crystal growth of perovskite. The enlarged perovskite grain size with a reduced density of the grain boundaries and improved crystallinity results in fewer charge carrier recombinations and a reduced defect density, leading to enhanced device efficiency (NH4F: 14.88 ± 0.33%, NH4Cl: 16.63 ± 0.21%, NH4Br: 16.64 ± 0.35%, and NH4I: 17.28 ± 0.15%) compared to that of a reference MAPbI3 device (Ref.: 12.95 ± 0.48%) and greater device stability. This simple technique involving the introduction of small amounts of ammonium halide additives to regulate the nucleation and crystal growth of perovskite films translates into highly reproducible enhanced device performance.

Original languageEnglish
JournalJournal of Industrial and Engineering Chemistry
DOIs
Publication statusAccepted/In press - 2019 Jan 1

Fingerprint

Ammonium Compounds
Perovskite
Crystallization
Crystal growth
Nucleation
Defect density
Charge carriers
Optoelectronic devices
Perovskite solar cells
perovskite
Grain boundaries
Crystalline materials
Costs

Keywords

  • Ammonium halide additives
  • Anti-Solvent engineering
  • CHNHPbIperovskite
  • Inverted planar structure
  • Perovskite grain size

ASJC Scopus subject areas

  • Chemical Engineering(all)

Cite this

High-performance CH3NH3PbI3 inverted planar perovskite solar cells via ammonium halide additives. / Jahandar, Muhammad; Khan, N.; Jahankhan, Muhammad; Song, Chang Eun; Lee, Hang Ken; Lee, Sang Kyu; Shin, Won Suk; Lee, Jong Cheol; Im, Sang Hyuk; Moon, Sang Jin.

In: Journal of Industrial and Engineering Chemistry, 01.01.2019.

Research output: Contribution to journalArticle

Jahandar, Muhammad ; Khan, N. ; Jahankhan, Muhammad ; Song, Chang Eun ; Lee, Hang Ken ; Lee, Sang Kyu ; Shin, Won Suk ; Lee, Jong Cheol ; Im, Sang Hyuk ; Moon, Sang Jin. / High-performance CH3NH3PbI3 inverted planar perovskite solar cells via ammonium halide additives. In: Journal of Industrial and Engineering Chemistry. 2019.
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AU - Khan, N.

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AU - Lee, Hang Ken

AU - Lee, Sang Kyu

AU - Shin, Won Suk

AU - Lee, Jong Cheol

AU - Im, Sang Hyuk

AU - Moon, Sang Jin

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AB - Organic-inorganic hybrid perovskites have recently attracted substantial attention as a top candidate for use as light-absorbing materials in high-efficiency, low-cost and solution-processable photovoltaic devices owing to their excellent optoelectronic properties. Here, we fabricated inverted planar perovskite solar cells by incorporating small amounts of ammonium halide NH4X (X = F, Cl, Br, I) additives into a CH3NH3PbI3 (MAPbI3) perovskite solution. A compact and uniform perovskite absorber layer with large perovskite crystalline grains is realized by simply incorporating small amounts of additives and by using an anti-solvent engineering technique to control the nucleation and crystal growth of perovskite. The enlarged perovskite grain size with a reduced density of the grain boundaries and improved crystallinity results in fewer charge carrier recombinations and a reduced defect density, leading to enhanced device efficiency (NH4F: 14.88 ± 0.33%, NH4Cl: 16.63 ± 0.21%, NH4Br: 16.64 ± 0.35%, and NH4I: 17.28 ± 0.15%) compared to that of a reference MAPbI3 device (Ref.: 12.95 ± 0.48%) and greater device stability. This simple technique involving the introduction of small amounts of ammonium halide additives to regulate the nucleation and crystal growth of perovskite films translates into highly reproducible enhanced device performance.

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