High performance GaAs MESFETs grown on InP substrates by MOCVD using tertiarybutylarsine

Jichai Jeong, R. M. Lum, J. K. Klingert, R. Bylsma, G. P. Vella-Coleiro, P. R. Smith

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Device performance of GaAs metal-semiconductor field effect transistors (MESFETs) grown by metalorganic chemical vapour deposition (MOCVD) on InP substrates using tertiarybutylarsine (t-BuAsH2) is reported. The 1 μm gate FETs have a maximum extrinsic transconductance of 135 mS/mm and an output transconductance of 5.5 mS/mm. A frequency of unity current gain of 11 GHz and a maximum frequency of oscillation of 22 GHz are obtained from S-parameter measurements. DC and microwave characteristics of t-BuAsH2 grown GaAs MESFETs are comparable to those of GaAs MESFETs grown using AsH3.

Original languageEnglish
Pages (from-to)482-484
Number of pages3
JournalElectronics Letters
Volume26
Issue number3
Publication statusPublished - 1990 Mar 1
Externally publishedYes

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MESFET devices
Metallorganic chemical vapor deposition
Transconductance
Substrates
Scattering parameters
Field effect transistors
Microwaves

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Jeong, J., Lum, R. M., Klingert, J. K., Bylsma, R., Vella-Coleiro, G. P., & Smith, P. R. (1990). High performance GaAs MESFETs grown on InP substrates by MOCVD using tertiarybutylarsine. Electronics Letters, 26(3), 482-484.

High performance GaAs MESFETs grown on InP substrates by MOCVD using tertiarybutylarsine. / Jeong, Jichai; Lum, R. M.; Klingert, J. K.; Bylsma, R.; Vella-Coleiro, G. P.; Smith, P. R.

In: Electronics Letters, Vol. 26, No. 3, 01.03.1990, p. 482-484.

Research output: Contribution to journalArticle

Jeong, J, Lum, RM, Klingert, JK, Bylsma, R, Vella-Coleiro, GP & Smith, PR 1990, 'High performance GaAs MESFETs grown on InP substrates by MOCVD using tertiarybutylarsine', Electronics Letters, vol. 26, no. 3, pp. 482-484.
Jeong J, Lum RM, Klingert JK, Bylsma R, Vella-Coleiro GP, Smith PR. High performance GaAs MESFETs grown on InP substrates by MOCVD using tertiarybutylarsine. Electronics Letters. 1990 Mar 1;26(3):482-484.
Jeong, Jichai ; Lum, R. M. ; Klingert, J. K. ; Bylsma, R. ; Vella-Coleiro, G. P. ; Smith, P. R. / High performance GaAs MESFETs grown on InP substrates by MOCVD using tertiarybutylarsine. In: Electronics Letters. 1990 ; Vol. 26, No. 3. pp. 482-484.
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