Device performance of GaAs metal-semiconductor field effect transistors (MESFETs) grown by metalorganic chemical vapour deposition (MOCVD) on InP substrates using tertiarybutylarsine (t-BuAsH2) is reported. The 1µm gate FETs have a maximum extrinsic transconductance of 135mS/mm and an output transconductance of 5.5mS/mm. A frequency of unity current gain of 11 GHz and a maximum frequency of oscillation of 22 GHz are obtained from Sparameter measurements. DC and microwave characteristics of t-BuAsH2grown GaAs MESFETs are comparable to those of GaAs MESFETs grown using AsH3.
- Gallium arsenide
- Semiconductor devices and materials
- Vapour deposition
ASJC Scopus subject areas
- Electrical and Electronic Engineering