High Performance GaAs MESFETs Grown on InP Substrates by MOCVD Using Tertiarybutylarsine

J. Jeong, R. M. Lum, J. K. Klingert, R. Bylsma, G. P. Vella-Coleiro, P. R. Smith

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Device performance of GaAs metal-semiconductor field effect transistors (MESFETs) grown by metalorganic chemical vapour deposition (MOCVD) on InP substrates using tertiarybutylarsine (t-BuAsH2) is reported. The 1µm gate FETs have a maximum extrinsic transconductance of 135mS/mm and an output transconductance of 5.5mS/mm. A frequency of unity current gain of 11 GHz and a maximum frequency of oscillation of 22 GHz are obtained from Sparameter measurements. DC and microwave characteristics of t-BuAsH2grown GaAs MESFETs are comparable to those of GaAs MESFETs grown using AsH3.

Original languageEnglish
Pages (from-to)482-484
Number of pages3
JournalElectronics Letters
Volume26
Issue number7
DOIs
Publication statusPublished - 1990

Keywords

  • Gallium arsenide
  • Semiconductor devices and materials
  • Vapour deposition

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Jeong, J., Lum, R. M., Klingert, J. K., Bylsma, R., Vella-Coleiro, G. P., & Smith, P. R. (1990). High Performance GaAs MESFETs Grown on InP Substrates by MOCVD Using Tertiarybutylarsine. Electronics Letters, 26(7), 482-484. https://doi.org/10.1049/el:19900313