High Performance GaAs MESFETs Grown on InP Substrates by MOCVD Using Tertiarybutylarsine

J. Jeong, R. M. Lum, J. K. Klingert, R. Bylsma, G. P. Vella-Coleiro, P. R. Smith

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Fingerprint Dive into the research topics of 'High Performance GaAs MESFETs Grown on InP Substrates by MOCVD Using Tertiarybutylarsine'. Together they form a unique fingerprint.

Engineering & Materials Science