High-Performance Metal-Insulator-Metal Capacitors Using Amorphous Ba Ti4 O9 Thin Film

Y. H. Jeong, J. B. Lim, Sahn Nahm, H. J. Sun, H. J. Lee

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Amorphous, 70 nm thick Ba Ti4 O9 film grown at 350°C exhibited a high capacitance density of 4.58 fFμ m2 at 100 kHz, which decreased slightly to 3.7 fFμ m2 at 6.0 GHz. It had a relatively high Q factor of 80 at 3 GHz. The leakage current density of the film was ∼1.07 nA cm2 at 1 V and the leakage current mechanism was considered to be Schottky emission. The quadratic and linear voltage coefficients of capacitance of the film were -65.4 and -44.0 ppmV at 100 kHz, respectively. The temperature coefficient of capacitance of the film was also low about 126.6 ppm°C at 100 kHz. These results confirm that the amorphous Ba Ti4 O9 film can be used as a high performance metal-insulator-metal capacitor.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume154
Issue number2
DOIs
Publication statusPublished - 2007 Jan 19

Fingerprint

capacitors
Capacitors
Metals
insulators
Thin films
thin films
Capacitance
metals
capacitance
Leakage currents
Q factors
leakage
coefficients
Current density
current density
Electric potential
electric potential
Temperature
temperature

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

High-Performance Metal-Insulator-Metal Capacitors Using Amorphous Ba Ti4 O9 Thin Film. / Jeong, Y. H.; Lim, J. B.; Nahm, Sahn; Sun, H. J.; Lee, H. J.

In: Journal of the Electrochemical Society, Vol. 154, No. 2, 19.01.2007.

Research output: Contribution to journalArticle

@article{8568bdf2be924f8ea36b689d32ae17de,
title = "High-Performance Metal-Insulator-Metal Capacitors Using Amorphous Ba Ti4 O9 Thin Film",
abstract = "Amorphous, 70 nm thick Ba Ti4 O9 film grown at 350°C exhibited a high capacitance density of 4.58 fFμ m2 at 100 kHz, which decreased slightly to 3.7 fFμ m2 at 6.0 GHz. It had a relatively high Q factor of 80 at 3 GHz. The leakage current density of the film was ∼1.07 nA cm2 at 1 V and the leakage current mechanism was considered to be Schottky emission. The quadratic and linear voltage coefficients of capacitance of the film were -65.4 and -44.0 ppmV at 100 kHz, respectively. The temperature coefficient of capacitance of the film was also low about 126.6 ppm°C at 100 kHz. These results confirm that the amorphous Ba Ti4 O9 film can be used as a high performance metal-insulator-metal capacitor.",
author = "Jeong, {Y. H.} and Lim, {J. B.} and Sahn Nahm and Sun, {H. J.} and Lee, {H. J.}",
year = "2007",
month = "1",
day = "19",
doi = "10.1149/1.2400606",
language = "English",
volume = "154",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "2",

}

TY - JOUR

T1 - High-Performance Metal-Insulator-Metal Capacitors Using Amorphous Ba Ti4 O9 Thin Film

AU - Jeong, Y. H.

AU - Lim, J. B.

AU - Nahm, Sahn

AU - Sun, H. J.

AU - Lee, H. J.

PY - 2007/1/19

Y1 - 2007/1/19

N2 - Amorphous, 70 nm thick Ba Ti4 O9 film grown at 350°C exhibited a high capacitance density of 4.58 fFμ m2 at 100 kHz, which decreased slightly to 3.7 fFμ m2 at 6.0 GHz. It had a relatively high Q factor of 80 at 3 GHz. The leakage current density of the film was ∼1.07 nA cm2 at 1 V and the leakage current mechanism was considered to be Schottky emission. The quadratic and linear voltage coefficients of capacitance of the film were -65.4 and -44.0 ppmV at 100 kHz, respectively. The temperature coefficient of capacitance of the film was also low about 126.6 ppm°C at 100 kHz. These results confirm that the amorphous Ba Ti4 O9 film can be used as a high performance metal-insulator-metal capacitor.

AB - Amorphous, 70 nm thick Ba Ti4 O9 film grown at 350°C exhibited a high capacitance density of 4.58 fFμ m2 at 100 kHz, which decreased slightly to 3.7 fFμ m2 at 6.0 GHz. It had a relatively high Q factor of 80 at 3 GHz. The leakage current density of the film was ∼1.07 nA cm2 at 1 V and the leakage current mechanism was considered to be Schottky emission. The quadratic and linear voltage coefficients of capacitance of the film were -65.4 and -44.0 ppmV at 100 kHz, respectively. The temperature coefficient of capacitance of the film was also low about 126.6 ppm°C at 100 kHz. These results confirm that the amorphous Ba Ti4 O9 film can be used as a high performance metal-insulator-metal capacitor.

UR - http://www.scopus.com/inward/record.url?scp=33846200453&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846200453&partnerID=8YFLogxK

U2 - 10.1149/1.2400606

DO - 10.1149/1.2400606

M3 - Article

VL - 154

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 2

ER -