High-performance metal-insulator-metal capacitors using amorphous BASm2Ti4O12 thin film

Young Hun Jeong, Jong Bong Lim, Sahn Nahm, Ho Jung Sun, Hwack Joo Lee

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The dielectric properties of the amorphous BaSm2Ti4 O12 film with various thicknesses were investigated to evaluate its potential use as a metal-insulator-metal (MIM) capacitor. An amorphous 35-nm-thick BSmT film grown at 300°C exhibited a high capacitance density of 9.9 fF/μm2 at 100 kHz and a low leakage current density of 1.790 at 1 V. The quadratic and linear voltage coefficients of capacitance of the film were 599 ppm/V2 and -81 ppm/V at 100 kHz, respectively. The temperature coefficient of capacitance of the film was also low about 236 ppm/°C at 100 kHz. These results confirmed the suitability of the amorphous BSmT film as a high-performance MIM capacitor.

Original languageEnglish
Pages (from-to)17-20
Number of pages4
JournalIEEE Electron Device Letters
Volume28
Issue number1
DOIs
Publication statusPublished - 2007 Jan

Keywords

  • High-κ
  • Metal-insulator-metal (MIM) capacitor
  • Temperature coefficient of capacitance (TCC)
  • Voltage coefficient of capacitance (VCC)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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