High-performance metal-insulator-metal capacitors using amorphous BASm2Ti4O12 thin film

Young Hun Jeong, Jong Bong Lim, Sahn Nahm, Ho Jung Sun, Hwack Joo Lee

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The dielectric properties of the amorphous BaSm2Ti4 O12 film with various thicknesses were investigated to evaluate its potential use as a metal-insulator-metal (MIM) capacitor. An amorphous 35-nm-thick BSmT film grown at 300°C exhibited a high capacitance density of 9.9 fF/μm2 at 100 kHz and a low leakage current density of 1.790 at 1 V. The quadratic and linear voltage coefficients of capacitance of the film were 599 ppm/V2 and -81 ppm/V at 100 kHz, respectively. The temperature coefficient of capacitance of the film was also low about 236 ppm/°C at 100 kHz. These results confirmed the suitability of the amorphous BSmT film as a high-performance MIM capacitor.

Original languageEnglish
Pages (from-to)17-20
Number of pages4
JournalIEEE Electron Device Letters
Volume28
Issue number1
DOIs
Publication statusPublished - 2007 Jan 1

Fingerprint

Amorphous films
Capacitors
Metals
Thin films
Capacitance
Thick films
Leakage currents
Dielectric properties
Current density
Electric potential
Temperature

Keywords

  • High-κ
  • Metal-insulator-metal (MIM) capacitor
  • Temperature coefficient of capacitance (TCC)
  • Voltage coefficient of capacitance (VCC)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

High-performance metal-insulator-metal capacitors using amorphous BASm2Ti4O12 thin film. / Jeong, Young Hun; Lim, Jong Bong; Nahm, Sahn; Sun, Ho Jung; Lee, Hwack Joo.

In: IEEE Electron Device Letters, Vol. 28, No. 1, 01.01.2007, p. 17-20.

Research output: Contribution to journalArticle

Jeong, Young Hun ; Lim, Jong Bong ; Nahm, Sahn ; Sun, Ho Jung ; Lee, Hwack Joo. / High-performance metal-insulator-metal capacitors using amorphous BASm2Ti4O12 thin film. In: IEEE Electron Device Letters. 2007 ; Vol. 28, No. 1. pp. 17-20.
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